IRF AUIRLL014N

PD- 97755
AUTOMOTIVE GRADE
AUIRLL014N
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
HEXFET® Power MOSFET
D
V(BR)DSS
55V
RDS(on) max.
G
S
0.14
ID
2.0A
D
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low onresistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
S
D
G
SOT-223
AUIRLL014N
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V g
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Max.
Continuous Drain Current, VGS @ 10V h
Pulsed Drain Current
c
Units
2.8
2.0
g
1.6
A
16
Power Dissipation (PCB Mount)
2.1
PD @TA = 25°C
h
Power Dissipation (PCB Mount) g
VGS
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
1.0
8.3
± 16
mW/°C
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
IAR
Avalanche Current
PD @TA = 25°C
c
EAR
Repetitive Avalanche Energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
g
d
cg
W
32
mJ
2.0
A
0.1
mJ
-55 to + 150
°C
Thermal Resistance
Parameter
RJA
RJA
g
Junction-to-Ambient (PCB mount, steady state) h
Junction-to-Ambient (PCB mount, steady state)
Typ.
Max.
Units
90
120
°C/W
50
60
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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1
01/20/12
AUIRLL014N
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
V(BR)DSS/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
gfs
IDSS
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55
–––
–––
–––
–––
1.0
2.3
–––
–––
–––
–––
–––
0.015
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.14
0.20
0.28
2.0
–––
25
250
100
-100
Conditions
V
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.0A

VGS = 5.0V, ID = 1.2A
VGS = 4.0V, ID = 1.0A
V
VDS = VGS, ID = 250μA
S
VDS = 25V, ID = 1.0A
μA VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
nA VGS = 16V
VGS = -16V
f
f
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.5
1.1
3.0
5.1
4.9
14
2.9
230
66
30
14
1.7
4.4
–––
–––
–––
–––
–––
–––
–––
nC
ns
Conditions
ID = 2.0A
VDS = 44V
VGS = 10V, See Fig. 6 and 9
VDD = 28V
ID = 2.0A
RG = 6.0 
RD = 14See Fig. 10
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
f
f
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
1.3
ISM
(Body Diode)
Pulsed Source Current
–––
–––
16
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
41
73
1.0
61
110
c
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ VDD = 25V, starting TJ = 25°C, L = 4.0mH
RG = 25, IAS = 4.0A. (See Figure 12)
ƒ ISD  2.0A, di/dt  170A/µs, VDD  V(BR)DSS,
TJ  150°C .
2
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.0A, VGS = 0V
TJ = 25°C, IF = 2.0A
di/dt = 100A/μs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
„ Pulse width 300µs; duty cycle 2%.
… When mounted on FR-4 board using minimum recommended
footprint.
† When mounted on 1 inch square copper board, for comparison
with other SMD devices.
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AUIRLL014N
Qualification Information
†
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
Moisture Sensitivity Level
Machine Model
SOT-223
MSL1
Class M1A (+/- 50V)†††
AEC-Q101-002
ESD
Human Body Model
Class H0 (+/- 250V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 1125V)†††
AEC-Q101-005
RoHS Compliant
†
Yes
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passsing voltage.
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3
AUIRLL014N
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
1
0.1
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
20μs PULSE WIDTH
TJ = 25°C
A
1
10
10
3.0V
20μs PULSE WIDTH
TJ = 150°C
A
1
100
0.1
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
V DS = 25V
20μs PULSE WIDTH
1
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
100
Fig 2. Typical Output Characteristics,
100
10
10
V DS, Drain-to-Source Voltage (V)
A
7.0
I D = 2.0A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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AUIRLL014N
Ciss
300
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
400
I D = 2.0A
V DS = 44V
V DS = 28V
16
12
200
Coss
100
Crss
0
1
10
100
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
VDS , Drain-to-Source Voltage (V)
6
9
12
A
15
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
3
10
TJ = 150°C
TJ = 25°C
1
10μs
10
100μs
1ms
1
10ms
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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A
1.6
TA = 25°C
TJ = 150°C
Single Pulse
0.1
1
10
A
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRLL014N
QG
10V
RD
V DS
VGS
QGS
QGD
D.U.T.
RG
+
- VDD
VG
10V
Charge
Pulse Width µs
Duty Factor 
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50K
.2F
12V
.3F
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (ZthJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
t
1
t
0.01
1
Notes:
1. Duty factor D = t
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
1
/t
2
2
2. Peak TJ = PDM x Z thJA + T A
0.01
0.1
1
10
100
A
1000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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15V
L
VDS
D.U.T
RG
IAS
10V
tp
DRIVER
+
V
- DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
EAS , Single Pulse Avalanche Energy (mJ)
AUIRLL014N
80
TOP
BOTTOM
60
40
20
0
VDD = 25V
25
V(BR)DSS
ID
1.8A
3.2A
4.0A
50
75
100
125
A
150
Starting TJ , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
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7
AUIRLL014N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
ƒ
-
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

+
-
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
RG
Driver Gate Drive
P.W.
Period
D=
VDD
P.W.
Period
*
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple  5%
ISD
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
8
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AUIRLL014N
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRLL014N
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
10
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
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AUIRLL014N
Ordering Information
Base part
AUIRLL014N
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Package Type
SOT-223
Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
2500
AUIRLL014N
AUIRLL014NTR
11
AUIRLL014N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or services without notice.
Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
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implant into the body, or in other applications intended to support or sustain life, or in any other application in
which the failure of the IR product could create a situation where personal injury or death may occur. Should
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such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation “AU”. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
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