PD - 95089A IRLR3802PbF IRLU3802PbF Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters l Power Management for Netcom, Computing and Portable Applications. l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max Qg 8.5mΩ 27nC 12V D-Pak IRLR3802 I-Pak IRLU3802 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 12 ± 12 84 60 320 88 44 0.59 -55 to + 175 V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. Max. Units ––– ––– ––– 1.7 40 110 °C/W Notes through are on page 9 www.irf.com 1 12/7/04 IRLR/U3802PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) ∆VGS(th)/∆TJ Gate Threshold Voltage Gate Threshold Voltage Coefficient IDSS Drain-to-Source Leakage Current IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 12 ––– ––– ––– 0.6 ––– ––– ––– ––– ––– 31 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.009 6.5 ––– ––– -3.2 ––– ––– ––– ––– ––– 27 3.6 2.0 10 11 12 28 11 14 21 17 2490 2150 530 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, I D = 1mA 8.5 VGS = 4.5V, ID = 15A mΩ 30 VGS = 2.8V, ID = 12A 1.9 V VDS = VGS, ID = 250µA ––– mV/°C 100 VDS = 9.6V, VGS = 0V µA 250 VDS = 9.6V, VGS = 0V, TJ = 125°C 200 VGS = 12V nA -200 VGS = -12V ––– S VDS = 6.0V, ID = 12A 41 ––– VDS = 6.0V ––– VGS = 5.0V ––– nC ID = 6.0A ––– See Fig.16 ––– ––– nC VDS = 10V, VGS = 0V ––– VDD = 6.0V, VGS = 4.5V ––– ns ID = 12A ––– Clamped Inductive Load ––– ––– VGS = 0V ––– pF VDS = 6.0V ––– ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units ––– ––– 300 20 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge 2 Min. Typ. Max. Units ––– ––– 84 ––– ––– 320 ––– ––– ––– ––– ––– ––– 0.81 0.65 52 54 50 50 1.2 ––– 78 81 75 75 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 12A, VGS = 0V TJ = 125°C, IS = 12A, VGS = 0V TJ = 25°C, IF = 12A, VR=20V di/dt = 100A/µs TJ = 125°C, IF = 12A, VR=20V di/dt = 100A/µs www.irf.com IRLR/U3802PbF 1000 1000 VGS 10V 4.5V 3.5V 2.5V 2.3V 2.0V 1.8V BOTTOM 1.5V 100 10 1 1.5V 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0.1 1 100 10 1.5V 1 0.1 T J = 25°C T J = 175°C 10 1 VDS = 5.0V 20µs PULSE WIDTH 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 6.0 ID = 84A VGS = 4.5V (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (Α) 1.5 2.0 10 Fig 2. Typical Output Characteristics 1000 0 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20µs PULSE WIDTH Tj = 175°C 0.1 10 VDS, Drain-to-Source Voltage (V) 1.0 VGS 10V 4.5V 3.5V 2.5V 2.3V 2.0V 1.8V BOTTOM 1.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLR/U3802PbF 100000 ID= 6.0A VGS , Gate-to-Source Voltage (V) Coss C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd = Cds + Cgd 10000 Ciss Coss 1000 Crss 8 6 4 2 0 100 1 10 0 100 10 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 100.0 10.0 T J = 25°C OPERATION IN THIS AREA LIMITED BY RDS (on) 1.5 2.0 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 2.5 100µsec 10 1 0.1 1.0 50 1msec VGS = 0V 0.5 40 100 T J = 175°C 0.0 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1.0 20 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 4 VDS = 12V 10 10msec Tc = 25°C Tj = 175°C Single Pulse 0 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U3802PbF LD VDS 100 LIMITED BY PACKAGE VDD ID , Drain Current (A) 80 D.U.T VGS 60 Pulse Width < 1µs Duty Factor < 0.1% 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tf td(off) tr Fig 10b. Switching Time Waveforms Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U3802PbF D.U.T RG VGS 20V DRIVER L VDS + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) 5000 15V TOP BOTTOM 4000 ID 8.0A 14A 20A 3000 2000 1000 0 tp 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. VGS(th) Gate threshold Voltage (V) 1.4 50KΩ 1.2 12V .2µF .3µF ID = 250µA 1.0 D.U.T. 0.8 + V - DS VGS 3mA 0.6 IG 0.4 ID Current Sampling Resistors Fig 14. Gate Charge Test Circuit 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) Fig 13. Threshold Voltage Vs. Temperature 6 www.irf.com IRLR/U3802PbF D.U.T Driver Gate Drive + • • • • D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period * RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - Period P.W. + + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www.irf.com 7 IRLR/U3802PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO Note: "P" in as sembly line pos ition indicates "Lead-Free" IRFU120 12 916A 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 12 AS S EMBLY LOT CODE 8 34 DAT E CODE P = DES IGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE www.irf.com IRLR/U3802PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS S EMBLY LOT CODE 5678 AS S EMBLED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 919A 56 78 AS S EMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 56 AS S EMBLY LOT CODE www.irf.com 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMBLY S IT E CODE 9 IRLR/U3802PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable Starting TJ = 25°C, L = 1.4mH junction temperature. Package limitation current is 30A. max. junction temperature. RG = 25Ω, IAS = 20A. * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrialmarket. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/