Product specification DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance • 90 mΩ @ VGS = 4.5V • 110 mΩ @ VGS = 2.5V • 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2, 3 and 5) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) • • • • Drain SOT-23 D Gate ESD PROTECTED TO 3kV Gate Protection Diode TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 1) Thermal Characteristics Symbol VDSS VGSS ID IDM Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 4) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Value 30 ±8 2.2 9 Units V V A A Value 650 192 -55 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: S G Source Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±5 V μA μA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.45 ⎯ 1.0 V RDS (ON) ⎯ 62 70 150 90 110 200 mΩ |Yfs| VSD ⎯ ⎯ 5 ⎯ ⎯ 0.9 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 2.2A VGS = 2.5V, ID = 2A VGS = 1.5V, ID = 0.67A VDS =5V, ID = 2.2A VGS = 0V, IS = 1A Ciss Coss Crss ⎯ ⎯ ⎯ 290 66 35 ⎯ ⎯ ⎯ pF pF pF VDS = 10V, VGS = 0V f = 1.0MHz 1. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads. 2. No purposefully added lead. Halogen and Antimony Free. 3. Short duration pulse test used to minimize self-heating effect. 4. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants. http://www.twtysemi.com [email protected] 1 of 1