TYSEMI KST9012

IC
Transistors
Transistor
T
SMD Type
Product specification
KST9012
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
0.55
Collector Current :IC=-0.5A
+0.1
1.3-0.1
+0.1
2.4-0.1
Excellent hFE liearity
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
2.Emitter
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-40
V
Collector - Emitter Voltage
VCEO
-25
V
Emitter - Base Voltage
VEBO
-5
V
Collector Current to Continuous
IC
-500
mA
mW
Collector Power Dissipation
PC
300
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector - base breakdown voltage
VCBO
Ic= -100ìA, IE=0
-40
V
Collector - emitter breakdown voltage
VCEO
IC= -1 mA , IB=0
-25
V
Emitter - base breakdown voltage
VEBO
IE= -100ìA, IC=0
-5
V
Collector cut - off current
ICBO
VCB=- 40V, IE=0
-0.1
A
Collector cut - off current
ICEO
VCB=-20V, IE=0
-0.1
A
Emitter cut - off current
IEBO
VEB=- 5V, IC=0
-0.1
A
hFE
VCE=-1V, IC= -50mA
DC current gain
120
400
Collector - emitter saturation voltage
VCE(sat)
IC= -500 mA, IB= -50mA
-0.6
V
Base - emitter voltage
VBE(sat)
IC= -500 mA, IB=- 50mA
-1.2
V
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
Transition frequency
fT
VCE=-6V, IC=-20mA,f=30MHz
5
150
pF
MHz
hFE Classification
2T1
Marking
Rank
hFE
L
120
H
200
200
http://www.twtysemi.com
J
350
300
400
[email protected]
4008-318-123
1 of 2
IC
Transistors
Transistor
T
SMD Type
Product specification
KST9012
Typical Characteristics
Fig.1 Static Characteristic
Fig.3 Base-Emitter Saturation Voltage
Fig.2 DC Current Gain
Fig.4 Current Gain Bandwidth Product
Colletor- Emitter Saturation Voltage
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2