Transistors SMD Type Product specification 2SC5161 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Low VCE(sat). 0.127 max NPN silicon transistor 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.25 2.65 -0.1 Fast switching.tr = 1.0ìs,IC = 0.8A +0.28 1.50 -0.1 +0.2 9.70 -0.2 High breakdown voltage.VCEO = 400V +0.15 0.50 -0.15 VCE(sat) = 0.15V (Typ.),IC / IB = 1A / 0.2A +0.15 4.60-0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 400 V Collector to emitter voltage VCES 400 V Emitter to base voltage VEBO 7 V Peak collector current * ICP 4 A(Puse) Collector current IC 2 A(DC) Collector power dissipation TC = 25 PC 10 W 1 Ta = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse pw=10ms http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SC5161 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 400 V collector-emitter breakdown voltage BVCEO IC=1mA 400 V IC=1.0A,IB1=0.1A,L=1mH 400 V 7 V collector-emitter voltage Emitter-base breakdown voltage collecotr cutoff current Emitter cutoff current VCEO(SUS) BVEBO IE=50ìA ICBO VCB=400V 10 ìA IEBO VEB=7V 10 ìA Collector to emitter saturation voltage VCE(sat) IC/IB=1A/0.2A 1 V Base to emitter saturation voltage VBE(sat) IC/IB=1A/0.2A 1.5 V DC current transfer ratio hFE VCE=5V,IC=0.1A 25 50 VCE=10V.IE=-0.1A.f=5MHz 10 MHz cob VCB=10V,IE=0A,f=1MHz 30 pF Turn-on time ton IC=0.8A,RL=250Ù Storage time tstg IB1=-IB2=0.08A Transition frequency fT Output capacitance Fall time tf VCC=200V 1 ìs 2.5 ìs 1 ìs hFE Classification ltem B hFE 25 to 50 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2