Transistors IC SMD Type Product specification 2SD875 Features Large collector power dissipation PC. High collector-emitter voltage (Base open) VCEO. Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Peak collector current ICP 1 A Collector power dissipation PC 1 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = 10 ìA, IE = 0 80 V Collector-emitter voltage VCEO IC = 100 ìA, IB = 0 80 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 Collector-base cutoff current ICBO VCB = 20 V, IB = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 150 mA V 130 0.1 ìA 330 ? Collector-emitter saturation voltage VCE(sat) IC = 300 mA, IB = 30 mA 0.2 0.4 V Base-emitter saturation voltage VBE(sat) IC = 300 mA, IB = 30 mA 0.85 1.2 V Transition frequency fT Collector output capacitance Cob VCB = 10 V, IE = -50 mA, f = 200 MHz 120 VCB = 10 V, IE = 0, f = 1 MHz 11 MHz 20 pF hFE Classification X Marking Rank R S hFE 130 220 185 330 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1