Ordering number:ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions · Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2038A [2SB1124/2SD1624] Features 4.5 1.6 1.5 0.4 1.0 2.5 4.25max · Adoption of FBET, MBIT processes. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Large current capacity and wide ASO. 0.5 3 2 1.5 1 0.4 3.0 1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view) 0.75 ( ) : 2SB1124 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings Unit VCBO VCEO (–)60 V (–)50 V VEBO IC (–)6 V (–)3 A ICP (–)6 A 500 mW Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Mounted on ceramic board (250mm2×0.8mm) 1.5 W 150 ˚C –55 to +150 ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(–)40V, IE=0 (–)1 µA Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 (–)1 µA DC Current Gain hFE1 hFE2 VCE=(–)2V, IC=(–)100mA fT VCE=(–)10V, IC=(–)50mA Gain-Bandwidth Product VCE=(–)2V, IC=(–)3A * ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 100* 560* 35 Marking 2SB1124 : BG 2SD1624 : DG 150 MHz Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019–1/4 2SB1124/2SD1624 Continued from preceding page. Parameter Symbol Output Capacitance Cob Ratings Conditions min typ max Unit (39) VCB=(–)10V, f=1MHz pF 25 Collector-to-Emitter Saturation Voltage VCE(sat) IC=(–)2A, IB=(–)100mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(–)2A, IB=(–)100mA pF (–0.35) (–0.7) V 0.19 0.5 V (–0.94) (–)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 (–)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 (–)50 V Emitter-to-Base Breakdown Voltage Turn-ON Time ton Storage Time V See specified Test Circuit. tstg Fall Time (–)6 See specified Test Circuit. tf See specified Test Circuit. 70 ns (70) ns 650 ns (450) ns 35 ns (35) ns Switching Time Test Circuit PW=20µs D.C.≤1% INPUT IB1 VR RB OUTPUT IB2 25Ω 50Ω + 470µF + 100µF --5V 25V 10IB1= --10IB2=IC=1A (For PNP, the polarity is reversed.) IC -- VCE --5.0 mA --4.0 mA --100 --3.5 --50mA --3.0 --2.5 --20mA --2.0 --1.5 --10mA --1.0 --5mA A 100m 80mA 60mA 4.0 3.5 40mA 3.0 20mA 2.5 10mA 2.0 1.5 5mA 1.0 --0.5 0.5 IB=0 0 0 --0.4 --0.8 --1.2 --2.0 0 mA A 2.0 ITR08908 2SD1624 8mA Collector Current, IC – A --6mA --1.2 1.6 1.8 --8mA --1.4 1.2 IC -- VCE 2.0 --10mA --1.6 0.8 Collector-to-Emitter Voltage, VCE – V 2SB1124 --12m --14 --1.8 0.4 ITR08907 IC -- VCE --2.0 IB=0 0 --1.6 Collector-to-Emitter Voltage, VCE – V Collector Current, IC – A 2SD1624 4.5 0 --20 Collector Current, IC – A Collector Current, IC – A --4.5 IC -- VCE 5.0 2SB1124 --1.0 --4mA --0.8 --0.6 --2mA 7mA 1.6 6mA 1.4 5mA 1.2 4mA 1.0 3mA 0.8 0.6 --0.4 0.4 --0.2 0.2 2mA 1mA IB=0 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Collector-to-Emitter Voltage, VCE – V IB=0 0 --18 --20 ITR08909 0 2 4 6 8 10 12 14 16 Collector-to-Emitter Voltage, VCE – V 18 20 ITR08910 No.2019–2/4 2SB1124/2SD1624 IC -- VBE --3.2 --2.0 °C 25°C --25°C --1.6 --1.2 --0.8 --0.4 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE – V 1.2 0.8 --1.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE – V 1.2 ITR08912 hFE -- IC 2SD1624 VCE=2V 7 5 5 DC Current Gain, hFE Ta=75°C 3 25°C 2 --25°C 100 7 3 --25°C 100 7 5 3 3 2 25°C Ta=75°C 2 5 2 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC – A 3 5 7 0.01 Output Capacitance, Cob -- pF 3 2SD 162 4 2SB 1124 100 7 5 3 2 10 0.01 For PNP, minus sign is omitted. 2 3 5 0.1 2 3 5 1.0 2 Collector Current, IC – A 3 10 ITR08915 VCE(sat) -- IC 7 0.1 2 3 5 7 1.0 3 10 7 2SB1 124 2SD 162 4 5 3 2 For PNP, minus sign is omitted. 2 3 5 7 2 10 3 --100 5°C --2 Ta= C 75° 7 25°C 3 2 --10 5 Collector-to-Base Voltage, VCB -- V Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 2 5 2 7 100 ITR08916 VCE(sat) -- IC 2SD1624 IC / IB=20 7 3 3 ITR08914 2SB1124 / 2SD1624 f=1MHz 1000 5 2 Cob -- VCB 1.0 1.0 5 2SB1124 IC / IB=20 5 5 5 5 2 3 Collector Current, IC – A 2SB1124 / 2SD1624 VCE=10V 7 2 ITR08913 f T -- IC 1000 7 0.2 1000 2SB1124 VCE= --2V 7 0 ITR08911 hFE -- IC 1000 DC Current Gain, hFE 1.6 0 0 Gain-Bandwidth Product, fT – MHz 2.0 0.4 0 Collector-to-Emitter Saturation Voltage, VCE (sat) – mV 2.4 Ta= 75° 25 ° C C --25° C Collector Current, IC – A --2.4 --1000 2SD1624 VCE=2V 2.8 Ta=7 5 Collector Current, IC – A --2.8 IC -- VBE 3.2 2SB1124 VCE= --2V 5 3 2 100 7 5 C Ta=75° 3 25°C --25°C 2 10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 2 3 5 ITR08917 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC – A 2 3 5 ITR08918 No.2019–3/4 2SB1124/2SD1624 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE (sat) – V 5 3 2 --1.0 25°C --25°C 7 Ta=75°C 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC – A 3 ICP=6A 5 2 DC op era 5 tio n 3 2 0.1 5 3 2 Ta=25°C Single pulse Mounted on ceramic board(250mm2×0.8mm) For PNP, minus sign is omitted. 3 5 7 1.0 2 3 5 7 10 1.0 2 3 Collector-to-Emitter Voltage, VCE – V 25°C Ta= --25°C 7 75°C 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 ITR08920 PC -- Ta 1.8 2SB1124 / 2SD1624 1.6 1.5 0m 10m s s s 1.0 2 Collector Current, IC – A 1m 10 3 ITR08919 2SB1124 / 2SD1624 IC=3A 3 5 3 7 0.01 5 ASO 10 Collector Current, IC – A 2 2SD1624 IC / IB=20 7 Collector Dissipation, PC – W Base-to-Emitter Saturation Voltage, VBE (sat) – V 7 VBE(sat) -- IC 10 2SB1124 IC / IB=20 M 1.4 ou nt 1.2 ed on ce ra 1.0 m ic bo ar 0.8 0.6 0.5 0.4 No h d( 25 0m m2 ×0 .8m eat s ink m ) 0.2 0 5 7 100 ITR08921 0 20 40 60 80 100 120 Ambient Temperature, Ta – ˚C 140 160 ITR08922 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.2019–4/4