Transistors IC SMD Type Product specification 2SK3712 TO-252 Features High voltage: VDSS = 250 V Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A) Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max +0.15 5.55-0.15 +0.1 0.80-0.1 +0.28 1.50-0.1 MAX. (VGS = 10 V, ID = 4.5 A) +0.15 0.50-0.15 RDS(on) = 0.58 +0.2 9.70-0.2 Low on-state resistance 3.80 30 V +0.25 2.65-0.1 Gate voltage rating: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS 30 V ID 9.0 A Idp * 27 A Drain current Power dissipation TA=25 1.0 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 40 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=250V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=4.5A 3 RDS(on) VGS=10V,ID=4.5A Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Typ Max 10 10 3.5 6 0.4 Ciss 450 VDS=10V,VGS=0,f=1MHZ 4.5 Unit A A V S 0.58 pF Output capacitance Coss 100 pF Reverse transfer capacitance Crss 40 pF Turn-on delay time ton 8 ns Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com ID=4.5A,VGS(on)=10V,RG=0 ,VDD=125V VDD = 200V VGS = 10 V ID =9.0A [email protected] 8 ns 21 ns 6 ns 14 nC 3 nC 7 nC 4008-318-123 1 of 1