WHXPCB AO4454

万和兴电子有限公司 www.whxpcb.com
AO4454
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AO4454 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behaviar. This universal technology is well
suited for PWM, load switching and general purpose
applications.
VDS
100V
6.5A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 36mΩ
RDS(ON) (at VGS = 7V)
< 43mΩ
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Units
V
±25
V
6.5
ID
TA=70°C
Maximum
100
5.3
A
IDM
46
Avalanche Current C
IAS, IAR
28
A
Avalanche energy L=0.1mH C
TA=25°C
EAS, EAR
39
mJ
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev1: November 2010
3.1
PD
TA=70°C
Steady-State
Steady-State
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
2
RθJA
RθJL
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Typ
31
59
16
°C
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4454
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
10
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.8
ID(ON)
On state drain current
VGS=10V, VDS=5V
46
TJ=55°C
50
100
VGS=10V, ID=6.5A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=6.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=7V, ID=6A
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
Gate Drain Charge
Units
3.4
4
µA
nA
V
A
30
36
56
67
35.5
43
mΩ
1
V
4
A
20
0.68
mΩ
S
950
1180
1450
pF
77
110
145
pF
21
36
50
pF
VGS=0V, VDS=0V, f=1MHz
0.35
0.7
1.05
Ω
15
19
23
nC
VGS=10V, VDS=50V, ID=6.5A
5.5
7
8.5
nC
3.5
6.3
9
nC
VGS=0V, VDS=50V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Max
V
VDS=100V, VGS=0V
IDSS
Crss
Typ
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=6.5A, dI/dt=500A/µs
11
16
21
Qrr
Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=500A/µs
35
50
65
10
VGS=10V, VDS=50V, RL=6.7Ω,
RGEN=3Ω
ns
7.2
ns
15
ns
7
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: November 2010
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Page 2 of 6
AO4454
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
VDS=5V
8V
50
40
7V
ID(A)
ID (A)
40
30
20
20
125°C
6V
25°C
10
VGS=5V
0
0
0
1
2
3
4
3
5
4
2.2
55
2
Normalized On-Resistance
60
RDS(ON) (mΩ )
50
VGS=7V
40
35
6
7
8
9
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
45
5
VGS=10V
30
25
VGS=10V
ID=6.5A
1.8
17
5
2
VGS=4.5V10
1.6
1.4
1.2
ID=6A
1
0.8
20
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
68
1.0E+02
ID=6.5A
1.0E+01
60
40
125°C
IS (A)
RDS(ON) (mΩ )
1.0E+00
52
125°C
44
1.0E-01
1.0E-02
36
25°C
1.0E-03
28
1.0E-04
25°C
1.0E-05
20
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: November 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AO4454
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1600
10
Ciss
1200
Capacitance (pF)
VGS (Volts)
1400
VDS=50V
ID=6.5A
8
6
4
1000
800
600
400
Crss
2
Coss
200
0
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
20
10
20
30
40 50 60 70 80 90
VDS (Volts)
Figure 8: Capacitance Characteristics
100
1000.0
IAR (A) Peak Avalanche Current
100
ID (Amps)
100.0
TA=100°C
TA=25°C
10.0
RDS(ON)
limited
100µs
1.0
1ms
TJ(Max)=150°C
TA=25°C
0.1
TA=150°C
TA=125°C
10µs
10ms
10s
DC
0.0
10
0.01
0.00001
0.0001
Time in avalanche, tA (s)
Figure 9: Single Pulse Avalanche capability (Note
C)
0.1
1
10
VDS (Volts)
0.000001
100
1000
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 1: November 2010
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Page 4 of 6
AO4454
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
30
25
120
25ºC
15
Qrr
125ºC
60
10
Irm
30
25ºC
5
0
0
0
5
10
15
20
25
3
di/dt=800A/µs
30
0
125ºC
Qrr
10
5
Irm
0
0
200
400
600
800
25
30
Is=20A
2
40
18
1.5
25ºC
S
15
12
1
25ºC
6
0.5
S
125º
0
1000
di/dt (A/µ
µs)
Figure 15: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 1: November 2010
20
125ºC
3
0
15
trr
9
25ºC
30
trr (ns)
60
10
2.5
21
Irm (A)
Qrr (nC)
15
5
27
20
90
0.5
S
24
25ºC
1
25ºC
30
25
120
1.5
IS (A)
Figure 14: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
125ºC
Is=20A
2
125ºC
IS (A)
Figure 13: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
150
2.5
trr
0
30
125ºC
25ºC
trr (ns)
20
90
Irm (A)
Qrr (nC)
24
22
20
18
16
14
12
10
8
6
4
2
0
125ºC
di/dt=800A/µs
S
150
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0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 16: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 5 of 6
AO4454
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Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: November 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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