A-POWER AP20T15GM-HF

AP20T15GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant
BVDSS
150V
RDS(ON)
70mΩ
ID
G
4A
S
D
Description
D
D
AP20T15 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
D
G
SO-8
S
S
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage
+20
V
4
A
2.5
A
[email protected]=25℃
[email protected]=100℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
16
A
[email protected]=25℃
Total Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
Value
Unit
50
℃/W
1
201311111
AP20T15GM-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
150
-
-
V
VGS=10V, ID=4A
-
-
70
mΩ
VGS=4.5V, ID=2A
-
-
120
mΩ
VGS=0V, ID=250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=4A
-
11
-
S
IDSS
Drain-Source Leakage Current
VDS=120V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=4A
-
26
42
nC
Qgs
Gate-Source Charge
VDS=120V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
16
-
nC
td(on)
Turn-on Delay Time
VDS=75V
-
12
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
41
-
ns
tf
Fall Time
VGS=10V
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
1930 3080
pF
Coss
Output Capacitance
VDS=25V
-
140
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
3.6
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.9A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=4A, VGS=0V
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
65
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP20T15GM-HF
30
20
10V
7.0V
6.0V
5.0V
o
16
20
10
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
o
T A =25 C
V G =4.0V
12
8
4
0
0
0
2
4
8.0V8
6
0
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
Fig 2. Typical Output Characteristics
90
3.2
I D =2A
ID=4A
V G =10V
Normalized RDS(ON)
T A =25 o C
80
RDS(ON) (mΩ )
4
V DS , Drain-to-Source Voltage (V)
70
60
2.4
1.6
0.8
50
0.0
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2.0
I D =250uA
1.6
Normalized VGS(th)
IS(A)
3
T j =25 o C
o
T j =150 C
2
1.2
0.8
1
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP20T15GM-HF
6
2400
2000
4
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
2800
I D =4A
V DS =120V
C iss
1600
1200
2
800
400
0
C oss
C rss
0
0
9
18
27
36
1
51
Q G , Total Gate Charge (nC)
101
151
201
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
100
10
Operation in this area
limited by RDS(ON)
1
ID (A)
10us
100us
0.1
0.01
1ms
10ms
100ms
1s
DC
T A =25 o C
Single Pulse
0.001
Duty factor=0.5
0.2
0.1
PDM
0.1
t
0.05
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.02
Rthja = 125℃
℃ /W
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
4
ID , Drain Current (A)
VG
QG
3
4.5V
QGS
2
QGD
1
Charge
Q
0
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
Fig 11. Drain Current v.s. Ambient
Temperature
Fig 12. Gate Charge Waveform
4