Ordering number : ENA1896A SFT1443 N-Channel Power MOSFET http://onsemi.com 100V, 9A, 225mΩ, Single TP/TP-FA Features • • ON-resistance RDS(on)1=180mΩ(typ.) Halogen free compliance • • Input Capacitance Ciss=490pF(typ.) Protection diode in 4V drive • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (Pulse) Drain Current (DC) ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature 100 V ±20 V 9 A PW≤10μs, duty cycle≤1% 36 A 1 W Tc=25°C 19 W Tch 150 °C Tstg --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-004 7003-004 5.5 7.0 5.5 4 0.85 0.7 0.5 1.5 1.5 4 0.5 0.6 1 2 2.3 7.5 1 2 3 0 to 0.2 0.6 0.5 1 : Gate 2 : Drain 3 : Source 4 : Drain 3 2.5 0.8 0.8 1.6 0.85 1.2 1.2 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain TP-FA TP 2.3 SFT1443-TL-H 2.3 6.5 5.0 1.2 SFT1443-H 0.5 7.0 2.3 6.5 5.0 Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL T1443 LOT No. 2,4 Electrical Connection 1 TL 3 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/D1510PA TKIM TC-00002450 No. A1896-1/9 SFT1443 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | RDS(on)1 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Conditions Ratings min typ Unit max 100 ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.5 1 μA ±10 μA 2.6 4 VDS=10V, ID=4.5A ID=3A, VGS=10V ID=1.5A, VGS=4.5V ID=1.5A, VGS=4V V S 180 225 mΩ 195 275 mΩ 205 290 mΩ 490 pF 34 pF Crss 19 pF 8 ns Rise Time td(on) tr 10 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=50V, VGS=10V, ID=9A 34 ns 24 ns 9.8 nC 1.8 nC 1.6 IS=9A, VGS=0V 1.03 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=50V VIN ID=4.5A RL=11.1Ω VIN D PW=10μs D.C.≤1% VOUT G SFT1443 P.G 50Ω S Ordering Information Device SFT1443-H SFT1443-TL-H Package Shipping TP 500pcs./bag TP-FA 700pcs./reel memo Pb Free and Halogen Free No. A1896-2/9 SFT1443 ID -- VDS 9 8 4 3 2 1 0.5 1.0 1.5 2.0 2.5 RDS(on) -- VGS 400 ID=1.5A 350 3.0A 300 250 200 150 100 50 2 4 6 8 10 12 14 2 1.0 7 5 2 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 5 tf 10 td(on) 7 tr 5 3 2 1.0 0.1 .5A =4 V GS 200 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT16183 =4 S VG 0A =3. , ID V 0 0. 150 =1 V GS 100 50 --40 --20 0 20 40 60 80 100 120 140 160 IT16180 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT16182 Ciss, Coss, Crss -- VDS f=1MHz 7 Ciss 5 3 2 100 7 5 Coss 3 Crss 2 2 =1 , ID V .5 =1 , ID V 0 . 250 1000 Ciss, Coss, Crss -- pF 2 4.5 IT16178 Diode Forward Voltage, VSD -- V td(off) 3 4.0 .5A 300 10 IT16181 VDD=50V VGS=10V 7 3.5 350 0.001 7 SW Time -- ID 100 3.0 400 10 7 5 3 2 3 0.1 0.1 2.5 Case Temperature, Tc -- °C Source Current, IS -- A 25°C 5°C Tc= --2 75°C 3 2.0 RDS(on) -- Tc 0 --60 16 3 2 1.5 450 VDS=10V 10 7 5 1.0 IT16179 | yfs | -- ID 100 7 5 0.5 Gate-to-Source Voltage, VGS -- V Tc=25°C 0 0 IT16177 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 3.0 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 3 Tc=7 5°C 25°C 0 450 Switching Time, SW Time -- ns 4 1 VGS=2.5V Drain-to-Source Voltage, VDS -- V 0 5 2 3.0V 0 6 C --25°C 3.5V 25 ° 5 7 5°C V 6.0 16 6 4.0V V 4.5 .0 V 7 Drain Current, ID -- A 8 Tc= 7 0V . 10 VDS=10V C 8 ID -- VGS 10 .0V --25° Tc=-25°C Drain Current, ID -- A 9 10 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT16184 No. A1896-3/9 SFT1443 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC PD -- Ta 9 10 0.6 0.4 0.2 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16187 1m s rat ion Operation in this area is limited by RDS(on). 10 0m s Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V PD -- Tc 25 0.8 0μ s ms ope s 10 10 DC 1.0 7 5 3 2 0.1 7 5 3 2 10μ ID=9A 10 7 5 3 2 IT16185 1.0 0 IDP=36A (PW≤10μs) 0.01 0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.2 ASO 100 7 5 3 2 VDS=50V ID=9A 3 5 7 100 IT16186 20 19 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16188 No. A1896-4/9 SFT1443 Taping Specification SFT1443-TL-H No. A1896-5/9 SFT1443 Outline Drawing SFT1443-TL-H Land Pattern Example Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No. A1896-6/9 SFT1443 Bag Packing Specification SFT1443-H No. A1896-7/9 SFT1443 Outline Drawing SFT1443-H Mass (g) Unit 0.315 mm * For reference No. A1896-8/9 SFT1443 Note on usage : Since the SFT1443 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1896-9/9