COMCHIP CPDQT12V0U-HF

SMD ESD Protection Diode
CPDQT3V3U-HF Thru. CPDQT12V0U-HF
RoHS Device
Halogen Free
Features
0402/SOD-882
- IEC61000-4-2 Level 4 ESD protection.
0.041(1.05)
0.037(0.95)
- ESD Rating of Class 3 per Human Body Mode.
- Low Leakage
- Response Time is Typically <1ns
0.026(0.65)
0.022(0.55)
Mechanical data
- Case: 0402/SOD-882 small outline plastic package.
0.015(0.37)
0.013(0.33)
- Terminals: Matte tin plated, solderable per
MIL-STD-750, method 2026.
0.012(0.30)
0.008(0.20)
- Mounting position: Any.
0.008(0.20)
0.015(0.37)
Max.
Circuit Diagram
1
0.021(0.54)
0.017(0.44)
2
CATHODE
ANODE
Dimensions in inches and (millimeter)
Maximum Rating (TA=25°C unless otherwise Specifed)
Symbol
Value
Unit
Total power dissipation on FR-5 board @TA=25°C (Note 1)
PD
150
mW
ESD per IEC 61000-4-2(Contact)
ESD per IEC 61000-4-2(Air)
VESD
±8
±15
kV
Lead Soldering Temperature - Maximum (10 second duration)
TL
260 (10 sec.)
°C
Junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Parameter
Notes: 1. FR-5=1.0*0.75*0.62 in.
Electrical Characteristics (TA=25°C unless otherwise noted, VF=0.9V Max.@ IF=10mA for all types)
VRWN
(V)
Part No.
IR (uA)
@VRWM
IPP
(A)
VC (V)
@Max IPP
(Note 2)
(Note 3)
(Note 3)
Max.
VBR (V)
@IT
IT
(mA)
Max.
PPK
(W)
(8*20µs)
Typ.
Typ.
CJ
(pF)
Max.
Max.
Min.
CPDQT3V3U-HF
3.3
2.5
5.0
1
9.8
10.4
102
80
CPDQT5V0U-HF
5.0
1.0
6.2
1
8.7
12.3
107
65
CPDQT12V0U-HF
12
1.0
13.3
1
5.9
23.7
140
30
Notes: 1. Other voltage available upon request.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C
3. Surge current waveform per Figure 3.
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1
QW-JP039
Comchip Technology CO., LTD.
SMD ESD Protection Diode
RATING AND CHARACTERISTIC CURVES (CPDQT3V3U-HF Thru. CPDQT12V0U-HF)
Fig.2- Typical Leakage Current
Versus Temperature
7.4
20
7.3
18
7.2
16
7.1
14
7.0
IR, (nA)
Breakdown Voltage, (v) ([email protected])
Fig.1- Typical Breakdown Voltage
Versus Temperature
6.9
6.8
10
8
6.7
6
6.6
6.5
4
6.4
2
6.3
0
-55
+25
+150
-55
+25
Temperature, (°C)
Fig.3- 8/20us Peak Pulse Current
Waveform Acc. IEC 6100-4-5
Fig.4- Nomalized Junction Capacitance
Voltage vs. Reverse Voltage
Peak Valur Ipp
e-t
80%
60%
40%
13
Test Waveform
parameters
tf=8us
td=20us
12
11
Clamping Voltage, VC(V)
Ta=25°C
100%
td= t Ipp/2
10
9
8
7
6
5
4
20%
Waveform
parameters:
tr=8µs
td=20µs
3
0%
2
0
+150
Temperature, (°C)
120%
Percentage of Ipp
12
5
10
15
20
25
30
0
Time, (us)
5
10
15
20
PEAK Pulse Current-Ipp, (A)
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2
QW-JP039
Comchip Technology CO., LTD.
Comchip
SMD ESD Protection Diode
SMD Diode Specialist
Marking Code
Product marking code
Marking Code
CPDQT3V3U-HF
E
CPDQT5V0U-HF
G
CPDQT12V0U-HF
H
∑ : Month Code
3
G
M
Part Number
X
XX
1
2
“ • ” or “•• ” or “–” :Traceablity code
Month Code:
Month
Odd Year
(per A.D.)
Even Year
(per A.D.)
Month
Odd Year
(per A.D.)
Even Year
(per A.D.)
Jan
1
E
Jul
7
N
Feb
2
F
Aug
8
P
Wer
3
H
Sep
9
U
Apr
4
J
Oct
T
X
May
5
K
Nov
V
Y
Jun
6
L
Dec
C
Z
Suggested PAD Layout
0402/SOD-882
SIZE
(mm)
(inch)
A
0.700
0.028
B
0.400
0.016
C
0.700
0.028
D
1.100
0.043
E
0.300
0.012
D
A
E
C
B
Standard Packaging
REEL PACK
Case Type
0402/SOD-882
REEL
Reel Size
( pcs )
(inch)
10,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 3
QW-JP039
Comchip Technology CO., LTD.