CM600DXL-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBT NX-Series Module 600 Amperes/1700 Volts A D AX E AU F G 18 MN J H AD J AR AS K 17 16 15 14 13 AT J H H AK 12 11 L AQ G 10 H 9 1 P Z Y DETAIL “C & D” AP EB 3 8 7 W P DETAIL “A” AB (6 PLACES) 2 QR S U T AN AM P V X H DETAIL “A” 4 AL AA (4 PLACES) DETAIL “B” BA 5 G 45° M 6 H M AE B AC AH BA AZ DETAIL “C” AG AF AK DETAIL “B” Es1 G1 TH2 (18) (17) (16) Th NTC TH1 Cs1 (15) (14) AG Es2 G2 Cs2 (13) (12) (11) 11 NC(10) C1(1) C1(2) Tr1 Tr2 E2(3) Di1 Di2 NC(9) C2E1 (8) E2(4) NC (5) NC (6) AJ C C2E1 (7) Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to ±0.4 AV AW AU AY BB G 10 H 9 DETAIL “D” Outline Drawing and Circuit Diagram DimensionsInches Millimeters Dimensions A B C D E F G H J K L M N P Q R S T U V W X Y Z AA 152.0 121.7 20.5 137.0 110.0±0.5 13.5 20.5±0.3 3.81 15.24 19.05±0.3 19.24 7.75 10.74 22.0 94.5±0.3 88.53 27.53 41.22 49.72 39.0 12.0 8.0 6.5 15.64 5.5 Dia. AB AC AD AE AF AG AH AJ AK AL AM AN AP AQ AR AS AT AU AV AW AX AY AZ BA BB 06/13 Rev. 1 5.98 4.79 0.81 5.39 4.33±0.02 0.53 0.81±0.012 0.15 0.6 0.74±0.012 0.75 0.3 0.42 0.86 3.72±0.012 3.48 1.08 1.62 1.95 1.53 0.47 0.31 0.26 0.61 Dia. Inches Millimeters M6 Metric M6 0.6 15.14 0.14 3.6 4.16±0.012 105.9±0.3 0.55 14.0 0.27 7.0 0.14 3.5 0.67+0.04/-0.02 17.0+1.0/-0.5 0.12 3.0 0.04 1.15 0.02 0.65 0.05 1.2 0.18 4.5 0.5 12.5 0.18 Dia. 4.5 Dia. 0.10 Dia. 2.6 Dia. 0.09 Dia. 2.25 Dia. 0.45±0.012 11.36±0.3 0.36±0.012 9.15±0.3 0.46±0.012 11.8±0.3 4.18±0.012 106.3±0.3 0.017±0.012 0.45±0.3 0.51 13.0 0.54 13.7 0.53±0.012 11.35±0.3 Description: Powerex IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low Drive Power £ Low VCE(sat) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ AC Motor Control £ Motion/Servo Control £ Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM600DXL-34SA is a 1700V (VCES), 600 Ampere Dual IGBT Power Module. Type Current Rating Amperes VCES Volts (x 50) CM600 34 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-34SA Dual IGBT NX-Series Module 600 Amperes/1700 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics SymbolRating Units Collector-Emitter Voltage (VGE = 0V) VCES1700 Volts Gate-Emitter Voltage (VCE = 0V) VGES±20 Volts Collector Current (DC, TC = 125°C)*2,*4IC Collector Current (Pulse, 600Amperes Repetitive)*3I CRM 1200Amperes Total Power Dissipation (TC = 25°C)*2,*4Ptot 5760Watts Emitter Current*2 IE*1 Emitter Current (Pulse, Repetitive)*3 600Amperes IERM*1 1200Amperes Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) VISO4000Volts Maximum Junction Temperature, Instantaneous Event (Overload) Tj(max)175 °C °C Storage Temperature Tstg -40 to +125 °C 0 0 0 18.5 Th Tr1 Tr1 27.0 Di1 Di1 41.1 Tr2 Tr2 Tr2 Tr2 70.2 Di2 Di2 Di2 Di2 84.3 95.8 Tr1 Di1 74.5 0 70.8 71.8 84.9 85.9 Tr1 Di1 48.7 29.5 30.5 43.6 44.6 27.6 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (Tj(max)) rating. *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. 92.1 -40 to +150 71.0 Tj(op) 45.1 47.2 °C Operating Junction Temperature, Continous Operation (Under switching) 24.2 Maximum Case Temperature*4TC(max)125 Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 2 06/13 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-34SA Dual IGBT NX-Series Module 600 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 5.4 6.0 6.6 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts (Terminal) IC = 600A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts Collector-Emitter Cutoff Current IC = 600A, VGE = 15V, Tj = Collector-Emitter Saturation Voltage VCE(sat) (Chip) 150°C*5 —2.25 — Volts IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts 125°C*5 — 2.1 — Volts —2.15 — Volts IC = 600A, VGE = 15V, Tj = IC = 600A, VGE = 15V, Tj = 150°C*5 Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Gate Charge QG Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Emitter-Collector Voltage — — 158 nF VCE = 10V, VGE = 0V — — 13 nF — — 2.9 nF VCC = 1000V, IC = 600A, VGE = 15V — 3310 — nC td(on) — — 900 ns tr VCC = 1000V, IC = 600A, VGE = ±15V, — — 150 ns td(off) RG = 0Ω, Inductive Load — — 900 ns — — 400 ns 25°C*5 — 4.1 5.3 Volts IE = 600A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts tf *1 VEC IE = 600A, VGE = 0V, Tj = (Terminal) 150°C*5 — 2.7 — Volts VEC*1 IE = 600A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts (Chip) IE = 600A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts IE = 600A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts IE = 600A, VGE = 0V, Tj = Emitter-Collector Voltage Reverse Recovery Time trr VCC = 1000V, IE = 600A, VGE = ±15V — — 300 ns Reverse Recovery Charge Qrr*1 RG = 0Ω, Inductive Load — 23 — µC Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 600A, VGE = ±15V — 167 — mJ Turn-off Switching Energy per Pulse Eoff RG = 0Ω, Tj = 150°C — 168 — mJ Reverse Recovery Energy per Pulse *1 Inductive Load — 106 — mJ Main Terminals-Chip, — — 0.6 mΩ — 2.4 — Ω Internal Lead Resistance *1 Err RCC' + EE' Per Switch,TC = 25°C*4 92.1 71.0 45.1 47.2 0 0 18.5 Th Di1 Di1 Tr1 Tr1 27.0 Di1 Di1 41.1 Tr2 Tr2 Tr2 Tr2 70.2 Di2 Di2 Di2 Di2 84.3 95.8 Tr1 74.5 0 70.8 71.8 84.9 85.9 Tr1 48.7 29.5 30.5 43.6 44.6 27.6 *1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *5 Pulse width and repetition rate should be such as to cause negligible temperature rise. Per Switch 24.2 rg 0 Internal Gate Resistance Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. 06/13 Rev. 1 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-34SA Dual IGBT NX-Series Module 600 Amperes/1700 Volts Electrical Characteristics, Tj = 25°C unless otherwise specified (continued) NTC Thermistor Part Characteristics Symbol Zero Power Resistance R25 Deviation of Resistance ∆R/R B Constant Test Conditions TC = TC = 100°C, R100 = 493Ω*4 B(25/50) Power Dissipation 25°C*4 Equation*6 Approximate by Min. Typ. Max. Units 4.85 5.00 5.15 kΩ -7.3 — +7.8 % — 3375 — K P25 TC = 25°C*4 — — 10 mW Rth(j-c)Q Per Inverter IGBT*4 — — 26 K/kW Rth(j-c)D FWDi*4 — — 39 K/kW 7 — K/kW 31 35 40 in-lb Thermal Resistance Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance, Per Inverter Rth(c-f) Thermal Grease Applied, — Per 1 Module*4,*7 Case to Heatsink Mechanical Characteristics Mounting Torque Mt Main Terminals, M6 Screw Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb Creepage Distance ds Terminal to Terminal 22.5 — — mm Terminal to Baseplate 16.8 — — mm Clearance da Terminal to Terminal 15.5 — — mm Terminal to Baseplate 11.3 — Weight m Flatness of Baseplate ec — mm — Grams — +100 µm 1000 1200 Volts 13.515.0 16.5 Volts 13 Ω —690 ±0 On Centerline X, Y*8 Recommended Operating Conditons, Ta = 25°C DC Supply Voltage VCC Gate-Emitter Drive Voltage Applied Across C1-E2 Terminals VGE(on) — Applied Across G1-Es1/G2-Es2 Terminals — 92.1 71.0 45.1 47.2 24.2 0 0 0 18.5 Th Tr1 Di1 Di1 Tr1 Tr1 27.0 Di1 Di1 41.1 Tr2 Tr2 Tr2 Tr2 70.2 Di2 Di2 Di2 Di2 84.3 95.8 70.8 71.8 84.9 85.9 Tr1 74.5 29.5 30.5 43.6 44.6 48.7 + : CONVEX – : CONCAVE Y Per Switch 27.6 RG *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. R25 1 1 *6 B(25/50) = In( )/( – ) R50 T25 T50 R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K] R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K] *7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)]. *8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below. 0 External Gate Resistance MOUNTING SIDE MOUNTING SIDE LABEL SIDE – : CONCAVE 0 X Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor Each mark points to the center position of each chip. + : CONVEX 4 06/13 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-34SA Dual IGBT NX-Series Module 600 Amperes/1700 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 1000 11 800 600 10 400 9 200 0 8 0 2 4 6 8 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 (Chip) Tj = 25°C Tj = 125°C Tj = 150°C 0 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (INVERTER PART - TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 104 10 Tj = 25°C (Chip) 8 IC = 1200A 6 IC = 600A 4 IC = 360A 2 0 (Chip) 6 8 10 12 14 16 18 20 Tj = 25°C Tj = 125°C Tj = 150°C 103 102 COLLECTOR CURRENT, IC, (AMPERES) 06/13 Rev. 1 4.5 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25°C (Chip) VGE = 20V 15 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1200 0 1 2 3 4 5 6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-34SA Dual IGBT NX-Series Module 600 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 VGE = 0V Cies 102 101 SWITCHING TIME, (ns) CAPACITANCE, Cies, Coes, Cres, (nF) 103 Coes 100 100 101 tf 102 101 101 102 tr VCC = 1000V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) 103 104 td(off) 103 SWITCHING TIME, (ns) SWITCHING TIME, (ns) td(on) Cres 10-1 10-1 td(on) tf 102 101 101 tr VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load VCC = 1000V VGE = ±15V IC = 600A Tj = 125°C Inductive Load td(on) td(off) 102 tr tf 102 COLLECTOR CURRENT, IC, (AMPERES) 6 td(off) 103 102 101 0 5 10 15 EXTERNAL GATE RESISTANCE, RG, (Ω) 06/13 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-34SA Dual IGBT NX-Series Module 600 Amperes/1700 Volts SWITCHING TIME VS. GATE RESISTANCE (TYPICAL) VCC = 1000V VGE = ±15V IC = 600A Tj = 150°C Inductive Load 103 REVERSE RECOVERY, Irr (A), trr (ns) SWITCHING TIME, (ns) 103 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) td(on) td(off) 102 tr tf 101 0 5 10 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Irr trr 101 101 15 102 103 EXTERNAL GATE RESISTANCE, RG, (Ω) EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE (TYPICAL) 103 20 102 101 101 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Irr trr 102 EMITTER CURRENT, IE, (AMPERES) 06/13 Rev. 1 103 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY, Irr (A), trr (ns) 102 IC = 600A VCC = 1000V 16 12 8 4 0 0 1000 2000 3000 4000 5000 GATE CHARGE, QG, (nC) 7 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM600DXL-34SA Dual IGBT NX-Series Module 600 Amperes/1700 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 102 101 101 101 104 SWITCHING ENERGY, Eon, Eoff, (mJ) 103 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 125°C Inductive Load Eon Eoff Err REVERSE RECOVERY ENERGY, Err, (mJ) SWITCHING ENERGY, Eon, Eoff, (mJ) 104 100 103 102 103 101 101 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 103 SWITCHING ENERGY, Eon, Eoff, (mJ) REVERSE RECOVERY ENERGY, Err, (mJ) 100 103 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 VCC = 1000V VGE = ±15V IC = 600A Tj = 125°C Inductive Load 0 5 Eon Eoff Err 10 GATE RESISTANCE, RG, (Ω) 8 102 102 COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 101 103 VCC = 1000V VGE = ±15V RG = 0Ω Tj = 150°C Inductive Load Eon Eoff Err REVERSE RECOVERY ENERGY, Err, (mJ) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 15 102 VCC = 1000V VGE = ±15V IC = 600A Tj = 150°C Inductive Load 101 0 5 Eon Eoff Err 10 15 GATE RESISTANCE, RG, (Ω) 06/13 Rev. 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) TEMPERATURE CHARACTERISTICS (NTC THERMISTER PART - TYPICAL) 100 102 10-1 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 26 K/kW (IGBT) Rth(j-c) = 39 K/kW (FWDi) 10-2 10-3 10-5 10-4 10-3 10-2 TIME, (s) 06/13 Rev. 1 RESISTANCE, (kΩ) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) CM600DXL-34SA Dual IGBT NX-Series Module 600 Amperes/1700 Volts 10-1 100 101 100 10-1 -50 -25 0 25 50 75 100 125 TEMPERATURE, (°C) 9