APT5010B2LL(G)
APT5010LLL(G)
500V 46A
0.100Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7
R
MOSFET
B2LL
T-MAX™
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
LLL
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
TO-264
G
S
All Ratings: TC = 25°C unless otherwise specified.
APT5010B2LL_LLL(G)
Parameter
UNIT
Drain-Source Voltage
500
ID
Continuous Drain Current @ TC = 25°C
46
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.0
W/°C
PD
TJ,TSTG
1
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Amps
184
Operating and Storage Junction Temperature Range
1
Volts
-55 to 150
°C
300
Amps
50
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
1600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 23A)
TYP
MAX
Volts
0.100
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
9-2004
Characteristic / Test Conditions
050-7011 Rev D
Symbol
APT5010B2LL_LLL(G)
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
895
Reverse Transfer Capacitance
f = 1 MHz
60
VGS = 10V
95
VDD = 250V
24
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
ID = 46A @ 25°C
td(off)
tf
15
VDD = 250V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
6
ns
25
ID = 46A @ 25°C
Turn-off Delay Time
nC
11
VGS = 15V
Rise Time
pF
50
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
4360
VGS = 0V
3
MAX
3
INDUCTIVE SWITCHING @ 25°C
545
VDD = 333V, VGS = 15V
ID = 46A, RG = 5Ω
510
INDUCTIVE SWITCHING @ 125°C
845
VDD = 333V, VGS = 15V
ID = 46A, RG = 5Ω
µJ
595
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
46
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -46A, dl S /dt = 100A/µs)
608
ns
Q rr
Reverse Recovery Charge (IS = -46A, dl S/dt = 100A/µs)
11.0
µC
dv/
Peak Diode Recovery
dt
dv/
184
(Body Diode)
(VGS = 0V, IS = - 46A)
dt
1.3
5
Amps
Volts
8
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.25
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.51mH, RG = 25Ω, Peak IL = 46A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID46A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.20
0.7
0.15
0.5
Note:
0.10
0.3
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7011 Rev D
9-2004
0.30
0.25
0.05
0.1
0.05
0
10-5
t1
t2
SINGLE PULSE
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.0131
0.0789
0.00266F
0.00584F
Power
(watts)
0.0811
0.230
0.0796F
0.460F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
70
60
50
40
TJ = +125°C
TJ = +25°C
10
0
0
TJ = -55°C
1 2
3 4 5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
40
30
20
10
0
25
7V
60
6.5V
40
6V
20
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
NORMALIZED TO
V
= 10V @ 23A
1.15
GS
1.1
VGS=10V
1.05
VGS=20V
1.0
0.95
0.9
0
I
V
D
= 23A
GS
20
40
60
80
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
0.0
-50
80
1.15
50
2.5
7.5V
1.1
1.0
0.9
0.8
9-2004
20
100
8V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7011 Rev D
ID, DRAIN CURRENT (AMPERES)
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
30
15 &10V
0
Case temperature. (°C)
90
APT5010B2LL_LLL(G)
120
RC MODEL
10,000
OPERATION HERE
LIMITED BY RDS (ON)
1mS
10
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
D
= 46A
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0
G
J
L = 100µH
30
td(on)
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
DD
R
G
= 330V
= 5Ω
T = 125°C
J
L = 100µH
60
tf
50
tr
40
10
0
10
20
0
10
40
50
60
70
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
30
40
50
60
70
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
= 330V
DD
diode reverse recovery.
Eon
900
600
Eoff
20
30
40
50
60
70
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
J
L = 100µH
0
10
V
D
T = 125°C
300
20
I
= 5Ω
E ON includes
Eon and Eoff (µJ)
TJ =+25°C
20
10
9-2004
TJ =+150°C
30
20
050-7011 Rev D
100
70
= 330V
= 5Ω
tr and tf (ns)
td(on) and td(off) (ns)
DD
R
T = 125°C
1200
200
80
V
1500
Crss
90
td(off)
60
40
100
100
80
70
Coss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
40
60
80
100 120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
50
1,000
10
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
100µS
C, CAPACITANCE (pF)
100
1
APT5010B2LL_LLL(G)
20,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
184
2000
30
= 330V
= 46A
T = 125°C
J
L = 100µH
EON includes
diode reverse recovery.
Eoff
1500
Eon
1000
500
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT5010 B2LL_LLL(G)
Gate Voltage
90%
10 %
Gate Voltage
T = 125 C
J
td(on)
td(off)
tr
T = 125 C
J
Drain Voltage
Drain Current
90%
tf
90%
5%
5%
10%
Drain Voltage
10 %
Drain Current
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
e3 100% Sn Plated
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
8-2004
Drain
Drain
20.80 (.819)
21.46 (.845)
050-7011 Rev D
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)