BUJD203AX NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package. 1.2 Features and benefits Fast switching Isolated package High voltage capability Very low switching and conduction losses Integrated anti-parallel E-C diode 1.3 Applications DC-to-DC converters Inverters Electronic lighting ballasts Motor control systems 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current see Figure 1; see Figure 2; DC; see Figure 4 - - 4 A Ptot total power dissipation Th ≤ 25 °C; see Figure 3 - - 26 W VCESM collector-emitter peak voltage VBE = 0 V - - 850 V IC = 500 mA; VCE = 5 V; see Figure 11; Th = 25 °C 13 21 32 VCE = 5 V; IC = 3 A; see Figure 11; Th = 25 °C - 12.5 - IB = 0 A; LC = 25 mH; IC = 10 mA; see Figure 6; see Figure 7 400 450 Static characteristics hFE VCEOsus DC current gain collector-emitter sustaining voltage - V BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector Simplified outline Graphic symbol C mb 3 E emitter mb n.c. mounting base; isolated B E sym131 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package BUJD203AX Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCESM collector-emitter peak voltage VBE = 0 V - 850 V VCBO collector-base voltage IE = 0 A - 850 V VCEO collector-emitter voltage IB = 0 A - 425 V IC collector current DC; see Figure 1; see Figure 2; see Figure 4 - 4 A ICM peak collector current see Figure 1; see Figure 2; see Figure 4 - 8 A IB base current DC - 2 A IBM peak base current - 4 A Ptot total power dissipation - 26 W Tstg storage temperature -65 150 °C Tj junction temperature - 150 °C BUJD203AX Product data sheet Th ≤ 25 °C; see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 2 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 001aac000 10 VCC IC (A) LC VCL(CE) probe point 8 LB IBon VBB 6 DUT 001aab999 4 2 0 0 Fig 1. 200 400 600 800 1000 VCEclamp (V) Reverse bias safe operating area Fig 2. Test circuit for reverse bias safe operating area 03aa13 120 Pder (%) 80 40 0 0 50 100 150 200 Th (°C) Fig 3. Normalized total power dissipation as a function of heatsink temperature BUJD203AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 001aac001 102 IC (A) duty cycle = 0.01 10 ICM(max) IC(max) II(3) (1) 1 (2) 10−1 tp = 20 μs 50 μs 100 μs 200 μs 500 μs DC I(3) 10−2 III(3) 10−3 102 10 1 103 VCEclamp (V) 1)Ptot maximum and Ptot peak maximum lines 2)Second breakdown limits 3) I = Region of permissable DC operation II = Extension for repetitive pulse operation III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs Fig 4. Forward bias safe operating area for Tmb ≤ 25 °C BUJD203AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; see Figure 5 - - 4.8 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 55 - K/W 001aag169 10 Zth(j-h) (K/W) 1 10−1 10−2 δ = 0.5 0.2 0.1 0.05 0.02 δ= P 0 t tp 10−3 10−6 10−5 10−4 10−3 10−2 10−1 Fig 5. tp 1/f 1/f 1 10 102 tp (s) Transient thermal impedance from junction to heatsink as a function of pulse duration 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C; from all terminals to external heatsink; clean and dust free - - 2500 V Cisol isolation capacitance Th = 25 °C; f = 1 MHz; from collector to external heatsink - 10 - pF BUJD203AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics ICES ICBO collector-emitter cut-off current collector-base cut-off current VBE = 0 V; VCE = 850 V; Tj = 125 °C [1] - - 2 mA VBE = 0 V; VCE = 850 V; Tj = 25 °C [1] - - 1 mA VCB = 850 V; IE = 0 A [1] - - 1 mA [1] - - 0.1 mA ICEO collector-emitter cut-off current VCE = 425 V; IB = 0 A IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A - - 10 mA VCEOsus collector-emitter sustaining voltage IB = 0 A; IC = 10 mA; LC = 25 mH; see Figure 6; see Figure 7 400 450 - V VCEsat collector-emitter saturation voltage IC = 3 A; IB = 0.6 A; see Figure 8; see Figure 9 - 0.29 1 V VBEsat base-emitter saturation voltage IC = 3 A; IB = 0.6 A; see Figure 10 - 0.99 1.5 V VF forward voltage IF = 2 A; Tj = 25 °C - 1.04 1.5 V hFE DC current gain IC = 1 mA; VCE = 5 V; Th = 25 °C; see Figure 11 10 15 32 IC = 500 mA; VCE = 5 V; Th = 25 °C; see Figure 11 13 21 32 IC = 2 A; VCE = 5 V; Th = 25 °C; see Figure 11 11 16 22 IC = 3 A; VCE = 5 V; Th = 25 °C; see Figure 11 - 12.5 - Dynamic characteristics ton turn-on time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 - 0.52 0.6 µs ts storage time IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 - 2.7 3.3 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 25 °C; inductive load; see Figure 14; see Figure 15 - 1.2 1.4 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 - - 1.8 µs IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A; RL = 75 Ω; Tj = 25 °C; resistive load; see Figure 12; see Figure 13 - 0.3 0.35 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 100 °C; inductive load; see Figure 14; see Figure 15 - - 0.12 µs IC = 2 A; IBon = 0.4 A; VBB = -5 V; LB = 1 µH; Tj = 25 °C; inductive load; see Figure 14; see Figure 15 - 0.03 0.06 µs tf [1] fall time Measured with half-sine wave voltage (curve tracer) BUJD203AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode IC (mA) 50 V 100 Ω to 200 Ω horizontal oscilloscope 250 vertical 6V 300 Ω 1Ω 100 30 Hz to 60 Hz 001aab987 10 0 min VCE (V) VCEOsus 001aab988 Fig 6. Test circuit for collector-emitter sustaining voltage Oscilloscope display for collector-emitter sustaining voltage test waveform 001aab997 001aab995 2.0 VCEsat (V) Fig 7. VCEsat (V) 0.5 IC = 1 A 2A 3A 4A 1.6 0.4 1.2 0.3 0.8 0.2 0.4 0 10−2 0.1 10−1 1 0 10−1 10 IB (A) Fig 8. Product data sheet 10 IC (A) Collector-emitter saturation voltage as a function of base current; typical values BUJD203AX 1 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 001aab996 1.4 VBEsat (V) 1.2 001aab994 102 Tj = 25 °C hFE 1.0 VCE = 5 V 0.8 10 1V 0.6 0.4 0.2 0 10−1 1 1 10−2 10 10−1 1 10 IC (A) IC (A) Fig 10. Base-emitter saturation voltage as a function of collector current; typical values VCC Fig 11. DC current gain as a function of collector current; typical values IC ICon 90 % 90 % RL VIM 0 RB DUT 10 % tp t tf T 001aab989 ts IB ton toff IBon 10 % t tr ≤ 30 ns −IBoff Fig 12. Test circuit for resistive load switching BUJD203AX Product data sheet 001aab990 Fig 13. Switching times waveforms for resistive load All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode IC VCC ICon 90 % LC IBon VBB LB DUT 001aab991 10 % t tf IB ts toff IBon t −IBoff 001aab992 Fig 14. Test circuit for inductive load switching BUJD203AX Product data sheet Fig 15. Switching times waveforms for inductive load All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 T (2) 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 16. Package outline SOT186A (TO-220F) BUJD203AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BUJD203AX v.1 20100927 Product data sheet - - BUJD203AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 10.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective BUJD203AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BUJD203AX Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 27 September 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 BUJD203AX NXP Semiconductors NPN power transistor with integrated diode 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Isolation characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 September 2010 Document identifier: BUJD203AX