Data Sheet - Diodes Incorporated

DMN601TK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS
60V
Features
RDS(ON) max
ID max
TA = +25°C

Low On-Resistance: RDS(ON)

Low Gate Threshold Voltage
2Ω @ VGS = 10V
0.3A

Low Input Capacitance
3Ω @ VGS = 5V
0.2A

Fast Switching Speed

Low Input/Output Leakage




ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making
it ideal for high efficiency power management applications.
Mechanical Data
Applications


Motor Control
Power Management Functions

Case: SOT-523

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish  Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.002 grams (Approximate)
SOT-523
D ra in
D
G a te
ESD Protected up to 2kV
G a te
P ro te c tio n
S o u rc e
D io d e
E Q U IVA L E N T C IR C U IT
TOP VIEW
G
S
TOP VIEW
Pin Out Configuration
Ordering Information (Note 4)
Part Number
DMN601TK-7
Notes:
Case
SOT-523
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN601TK
Document number: DS30654 Rev. 6 - 2
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September 2014
© Diodes Incorporated
DMN601TK
Marking Information
K7K
Date Code Key
Year
Code
2005
S
Month
Code
…
…
2006
T
Jan
1
Feb
2
Mar
3
K7K = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
YM
2014
B
2015
C
Apr
4
May
5
2016
D
Jun
6
2017
E
Jul
7
2018
F
Aug
8
2019
G
Sep
9
Oct
O
2020
H
2021
I
Nov
N
Dec
D
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous
Pulsed (Note 6)
Drain Current (Note 5)
Units
V
V
ID
Value
60
±20
300
800
Symbol
PD
RJA
TJ, TSTG
Value
150
833
-65 to +150
Units
mW
°C/W
°C
mA
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60






1.0
±10
V
µA
µA
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.0
RDS (ON)

|Yfs|
80
2.5
2.0
3.0

V
Static Drain-Source On-Resistance
1.6



ms
VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
VDS =10V, ID = 0.2A
Ciss
Coss
Crss






50
25
5.0
pF
pF
pF
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
Ω
Test Condition
VDS = 25V, VGS = 0V
f = 1.0MHz
5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN601TK
Document number: DS30654 Rev. 6 - 2
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September 2014
© Diodes Incorporated
ID, DRAIN CURRENT (A)
DMN601TK
VGS = 10V
8V
6V
5V
4V
3V
10V
8V
6V
1.0
5V
0.8
4V
0.6
0.4
0.2
3V
0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2
10
VDS = 10V
ID = 1mA
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
Pulsed
1.5
1
0.5
0
-50
-25
75 100 125
0
25
50
Tch, CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
1
0.1
150
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE ()
10
0
1
VGS, GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
ID, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN601TK
Document number: DS30654 Rev. 6 - 2
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September 2014
© Diodes Incorporated
DMN601TK
VGS = 10V
Pulsed
IDR, REVERSE DRAIN CURRENT (A)
RDS(ON), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE ()
ID = 300mA
ID = 150mA
VGS = 0V
Pulsed
TA = 125°C
TA = 150°C
TA = 85°C
TA = 25°C
T A = 0°C
TA = -25°C
TA = -55°C
0
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
TCH, CHANNEL TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
IDR, REVERSE DRAIN CURRENT (A)
VGS = 10V
TA= 25°C
Pulsed
VGS = 0V
VGS = 10V
Pulsed
TA = 25°C
TA = 150°C
TA = -55°C
TA = 85°C
1
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
DMN601TK
Document number: DS30654 Rev. 6 - 2
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© Diodes Incorporated
DMN601TK
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT-523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50


G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°


All Dimensions in mm
A
B C
G
H
K
M
N
J
L
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
C
X
DMN601TK
Document number: DS30654 Rev. 6 - 2
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
E
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DMN601TK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
DMN601TK
Document number: DS30654 Rev. 6 - 2
6 of 6
www.diodes.com
September 2014
© Diodes Incorporated