A Product Line of Diodes Incorporated ZXTC4591AMC COMPLEMENTARY 40V HIGH PERFORMANCE TRANSISTOR Features Mechanical Data NPN Transistor • BVCEO > 40V • IC = 3A Continuous Collector Current • Low Saturation Voltage (500mV max @ 1A) • RSAT = 195mΩ for a low equivalent On-Resistance PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-500mV max @ -1A) • RSAT = 350mΩ for a low equivalent On-Resistance • hFE characterized up to 2A for high current gain hold up • Low profile 0.8mm high package for thin applications • RθJA efficient, 40% lower than SOT26 2 • 6mm footprint, 50% smaller than TSOP6 and SOT26 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • PPAP capable (Note 4) • • • • • • • Case: W-DFN3020-8 Type B Nominal package height: 0.8mm Case material: molded plastic. “Green” molding compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.013 grams (approximate) Applications • • • • • • DC – DC Converters Charging circuits Power switches LED Backlighting circuits Motor control Portable applications C1 C2 W-DFN3020-8 Type B C2 B1 B2 E2 NPN Transistor Bottom View C1 C2 E1 Top View C2 E2 PNP Transistor C1 C1 B2 E1 B1 Pin 1 Bottom View Pin Out Equivalent Circuit Ordering Information (Note 5) Product ZXTC4591AMCTA ZXTC4591AMCQTA Notes: Compliance AEC-Q101 Automotive Marking 91A 91A Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. 5. For packaging details, go to our website at http://www.diodes.com Marking Information 91A ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 91A = Product type marking code Top view, dot denotes pin 1 1 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC4591AMC Maximum Ratings (@TA = +25°C, unless otherwise specified.) Parameter Symbol VCBO VCEO VEBO ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Notes 6 & 9) (Notes 7 & 9) Base Current IC NPN 40 40 7 3 2 2.5 PNP -40 -40 -7 -3 -1.5 -2 300 IB Unit V A mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Notes 6 & 9) Power Dissipation Linear Derating Factor (Notes 7 & 9) PD (Notes 8 & 9) (Notes 8 & 10) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 6 & 9) (Notes 7 & 9) (Notes 8 & 9) (Notes 8 & 10) (Notes 9 & 11) RθJA RθJL TJ, TSTG NPN PNP 1.5 12 2.45 19.6 1.13 8 1.7 13.6 83.3 51.0 111 73.5 17.1 -55 to +150 Unit W mW/°C °C/W °C 2 6. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 7. Same as note (6), except the device is measured at t <5 sec. 8. Same as note (6), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper. 9. For a dual device with one active die. 10. For dual device with 2 active die running at equal power. 11. Thermal resistance from junction to solder-point (on the exposed collector pad). ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 2 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC4591AMC VCE(SAT) Limited -IC Collector Current (A) IC Collector Current (A) Thermal Characteristics and Derating Information DC 1 1s 100ms 10ms 0.1 1ms 8sqcm 2oz Cu One active die Single Pulse, Tamb=25°C 0.01 0.1 100us 1 VCE(SAT) Limited 1 DC 1s 100ms 10ms 0.1 1ms 8sqcm 2oz Cu One active die Single Pulse, Tamb=25°C 0.01 0.1 10 VCE Collector-Emitter Voltage (V) 100us 1 10 -VCE Collector-Emitter Voltage (V) NPN Safe Operating Area PNP Safe Operating Area 8sqcm 2oz Cu One active die 60 D=0.5 40 20 Single Pulse D=0.2 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 80 10sqcm 1oz Cu Two active die 1.5 8sqcm 2oz Cu One active die 10sqcm 1oz Cu One active die 1.0 0.5 0.0 0 Transient Thermal Impedance 100 125 150 225 2oz Cu Two active die Tamb=25°C Tj max=150°C Thermal Resistance (°C/W) PD Dissipation (W) 75 Derating Curve 3.5 2.5 50 Temperature (°C) Pulse Width (s) 3.0 25 Continuous 2.0 2oz Cu One active die 1.5 1.0 1oz Cu One active die 0.5 0.0 100m 1 1oz Cu Two active die 10 100 200 ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 1oz Cu Two active die 150 125 100 75 50 2oz Cu Once active die 2oz Cu Two active die 25 0 0.1 Board Cu Area (sqcm) Power Dissipation v Board Area 1oz Cu One active die 175 1 10 100 Board Cu Area (sqcm) Thermal Resistance v Board Area 3 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC4591AMC NPN - Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Min 40 40 7 - Typ - Max 100 100 100 Unit V V V nA nA nA Static Forward Current Transfer Ratio (Note 12) hFE 300 300 200 35 - 900 - - - 300 500 1.0 1.1 10 - - Collector-Emitter Saturation Voltage (Note 12) VCE(sat) Base-Emitter Turn-On Voltage (Note 12) Base-Emitter Saturation Voltage (Note 12) Output Capacitance VBE(on) VBE(sat) Cobo - fT 150 Transition Frequency Notes: mV V V pF MHz Test Condition IC = 100µA IC = 10mA IE = 100µA VCB = 30V VEB = 4V VCE = 30V IC = 1mA, VCE = 5V IC = 500mA, VCE = 5V IC = 1A, VCE = 5V IC = 2A, VCE = 5V IC = 0.5A, IB = 50mA IC = 1A, IB = 100mA IC = 1A, VCE = 5V IC = 1A, IB = 100mA VCB = 10V, f = 1MHz VCE = 10V, IC = 50mA, f = 100MHz 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 4 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC4591AMC NPN - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1 Tamb=25°C 150°C VCE(SAT) (V) VCE(SAT) (V) IC/IB=100 100m IC/IB=10 0.8 IC/IB=50 IC/IB=10 10m 0.6 100°C 0.4 25°C 0.2 -55°C IC/IB=20 1m 10m 100m 0.0 1 0 1 IC Collector Current (A) VCE=5V 150°C 1.2 IC/IB=10 -55°C 1000 1.0 VBE(SAT) (V) 100°C 800 Gain 3 VCE(SAT) v IC VCE(SAT) v IC 1200 2 IC Collector Current (A) 25°C 600 400 -55°C 200 25°C 0.8 0.6 100°C 150°C 0.4 0 1m 10m 100m 1 IC Collector Current (A) 1m 10m 100m 1 IC Collector Current (A) VBE(SAT) v IC hFE v IC 1.2 VCE=5V -55°C 1.0 VBE(ON) (V) 25°C 0.8 0.6 100°C 0.4 150°C 0.2 1m 10m 100m 1 IC Collector Current (A) VBE(ON) v IC ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 5 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC4591AMC PNP - Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Min -40 -40 -7 - Typ - Max -100 -100 -100 Unit V V V nA nA nA hFE 300 300 250 160 30 - 800 - - Collector-Emitter Saturation Voltage (Note 12) VCE(sat) - - -200 -350 -500 mV Base-Emitter Turn-On Voltage (Note 12) Base-Emitter Saturation Voltage (Note 12) Output Capacitance VBE(on) VBE(sat) Cobo - - -1.0 -1.1 10 V V pF fT 150 - - MHz Static Forward Current Transfer Ratio (Note 12) Transition Frequency Notes: Test Condition IC = -100µA IC = -10mA IE = -100µA VCB = -30V VEB = -4V VCE = -30V IC = -1mA, VCE = -5V IC = -100mA, VCE = -5V IC = -500mA, VCE = -5V IC = -1A, VCE = -5V IC = -2A, VCE = -5V IC = -0.1A, IB = -1mA IC = -0.5A, IB = -20mA IC = -1.0A, IB = -100mA IC = -1A, VCE = -5V IC = -1A, IB = -50mA VCB = -10V, f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 6 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC4591AMC PNP - Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1.5 1 Tamb=25°C IC/IB=10 -VCE(SAT) (V) -VCE(SAT) (V) IC/IB=100 IC/IB=50 100m IC/IB=20 25°C 100°C 1.0 150°C -55°C 0.5 IC/IB=10 10m 1m 10m 100m 0.0 0.0 1 -IC Collector Current (A) 0.5 1.0 1.5 2.0 2.5 -IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 1.2 VCE=5V 800 IC/IB=10 150°C -VBE(SAT) (V) Gain 600 100°C 400 25°C 200 -55°C 0 1m 10m 25°C 0.8 0.6 100m 1 150°C 1m 10m 100m 1 -IC Collector Current (A) VBE(SAT) v IC hFE v IC VCE=5V 100°C 0.4 -IC Collector Current (A) 1.0 -55°C 1.0 -55°C -VBE(ON) (V) 25°C 0.8 0.6 100°C 0.4 150°C 0.2 1m 10m 100m 1 -IC Collector Current (A) VBE(ON) v IC ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 7 of 9 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC4591AMC Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D D4 D4 D2 E E2 b Z e L W-DFN3020-8 Type B Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C X Dimensions C G G1 X X1 Y Y1 Y2 Y1 G1 G Y2 Y X1 ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 8 of 9 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC4591AMC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com ZXTC4591AMC Document number: DS31925 Rev. 4 - 2 9 of 9 www.diodes.com October 2012 © Diodes Incorporated