DMP2066LDM P-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Low RDS(ON): • 40 mΩ @VGS = -4.5V • 70 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • Case: SOT26 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) SOT26 Top View D D S D D G Top View Internal Schematic Ordering Information (Note 3) Part Number DMP2066LDM-7 DMP2066LDMQ-7 Notes: Case SOT26 SOT26 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information DMC Date Code Key Year Code Month Code 2008 V Jan 1 DMP2066LDM Document number: DS31464 Rev. 4 - 2 2009 W Feb 2 Mar 3 YM NEW PRODUCT • Mechanical Data DMC = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Apr 4 2011 Y May 5 Jun 6 1 of 5 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D December 2011 © Diodes Incorporated DMP2066LDM NEW PRODUCT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) Continuous Symbol VDSS VGSS TA = 25°C TA = 70°C Value -20 ±12 -4.6 -3.7 -18 2.0 ID Pulsed Drain Current (Note 5) Body-Diode Continuous Current (Note 4) IDM IS Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4); Steady-State Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 1.25 100 -55 to +150 Unit W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On State Drain Current (Note 6) Symbol Min Typ Max Unit BVDSS IDSS IGSS VGS(th) ID (ON) -20 ⎯ ⎯ -0.6 -15 V μA nA V A RDS (ON) ⎯ ⎯ -1 ±100 -1.2 ⎯ 40 70 Forward Transconductance (Note 6) Diode Forward Voltage (Note 6) Maximum Body-Diode Continuous Current (Note 4) DYNAMIC PARAMETERS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance gFS VSD IS ⎯ -0.5 ⎯ ⎯ ⎯ -0.96 ⎯ 29 55 9 -0.72 ⎯ Ciss Coss Crss Gate Resistance TJ = 25°C Static Drain-Source On-Resistance (Note 6) SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: mΩ Test Condition ID = -250μA, VGS = 0V VDS = -20V, VGS = 0V VDS = 0V, VGS = ±12V VDS = VGS, ID = -250μA VGS = -4.5V, VDS = -5V VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.8A VDS = -10V, ID = -4.6A IS = -2.1A, VGS = 0V ⎯ ⎯ -1.4 1.7 S V A ⎯ ⎯ ⎯ 820 200 160 ⎯ ⎯ ⎯ pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz RG ⎯ 2.5 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz QG QGS QGD td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 10.1 1.5 4.3 4.4 9.9 28.0 23.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC VDS = -10V, VGS = -4.5V, ID = -4.5A ns VDS = -10V, VGS = -4.5V, ID = -1A, RG = 6.0Ω ⎯ 4. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 5. Repetitive Rating, pulse width limited by junction temperature. 6. Test pulse width t = 300μs. 7. Guaranteed by design. Not subject to production testing. DMP2066LDM Document number: DS31464 Rev. 4 - 2 2 of 5 www.diodes.com December 2011 © Diodes Incorporated DMP2066LDM 30 20 VGS = 10V VGS = 4.5V VDS = 5.0V 16 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V 18 12 12 VGS = 2.5V 6 8 4 TA = 150°C VGS = 2.0V 0 5 1 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V 0.01 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 6 12 18 24 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 10V ID = 10A 1.2 VGS = 4.5V ID = 5A 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Normalized On-Resistance vs. Ambient Temperature DMP2066LDM Document number: DS31464 Rev. 4 - 2 4 VGS = 4.5V 0.06 TA = 150°C TA = 125°C 0.04 TA = 85°C TA = 25°C TA = -55°C 0.02 0 0 6 12 18 24 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 2.4 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.08 30 1.6 TA = 25°C TA = -55°C 0 0 T A = 85°C TA = 125°C VGS = 1.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 24 2.0 1.6 1.2 0.8 ID = 1mA ID = 250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 3 of 5 www.diodes.com December 2011 © Diodes Incorporated DMP2066LDM 10,000 20 T A = 25°C f = 1MHz CT, TOTAL CAPACITANCE (pF) IS, SOURCE CURRENT (A) 12 1,000 8 Ciss 4 Coss Crss 100 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current 0 1.2 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Total Capacitance 20 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 16 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 120°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 9 Transient Thermal Response Package Outline Dimensions A B C H K J DMP2066LDM Document number: DS31464 Rev. 4 - 2 M D L 4 of 5 www.diodes.com SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm December 2011 © Diodes Incorporated DMP2066LDM Suggested Pad Layout NEW PRODUCT E Z E Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C G C E 2.40 0.95 Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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