DMN33D8L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT NEW PRODUCT Product Summary Features and Benefits V(BR)DSS RDS(ON) max 30V 3.0Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 250mA 200mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected 2KV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data • Motor Control • • Power Management Functions • • Backlighting Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (approximate) Drain SOT23 D Gate ESD protected Gate Protection Diode Top View S G Source Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN33D8L-7 DMN33D8L-13 Notes: Compliance Standard Standard Case SOT23 SOT23 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Chengdu A/T Site Date Code Key Year Code Month Code 2014 B Jan 1 Shanghai A/T Site 2015 C Feb 2 DMN33D8L Document number: DS36124 Rev. 2 - 2 088 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y̅ = Year (ex: A = 2013) M = Month (ex: 9 = September) Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 5 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D June 2014 © Diodes Incorporated DMN33D8L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units VDSS 30 V Drain-Source Voltage NEW PRODUCT NEW PRODUCT Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 250 200 mA Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C ID 200 150 mA Maximum Continuous Body Diode Forward Current (Note 6) IS 0.5 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) (Note 6) IDM 0.8 A Symbol Value Units PD 350 mW Steady State RθJA 357 °C/W PD 520 mW Steady State RθJA 240 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note5 ) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 µA VGS = ±20V, VDS = 0V VGS(th) 1.0 ⎯ 2.5 V RDS(ON) ⎯ ⎯ ⎯ 3.0 3.8 Ω Forward Transfer Admittance |Yfs| 80 ⎯ ⎯ ms Diode Forward Voltage VSD ⎯ 0.75 1.1 V Input Capacitance Ciss ⎯ 50 ⎯ pF Output Capacitance Coss ⎯ 12 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 10 ⎯ pF OFF CHARACTERISTICS (Note 7) ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250μA VGS = 10V, ID = 100mA VGS = 5V, ID = 10mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Total Gate Charge Qg ⎯ 1.2 ⎯ nC Gate-Source Charge Qgs ⎯ 0.2 ⎯ nC Gate-Drain Charge Qgd ⎯ 0.1 ⎯ nC Turn-On Delay Time tD(on) ⎯ 2.3 ⎯ ns Turn-On Rise Time tr ⎯ 3.8 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 17.6 ⎯ ns tf ⎯ 16.2 ⎯ ns Turn-Off Fall Time Notes: VDS = 15V, VGS = 0V f = 1.0MHz VGS = 10V, VDS = 10V, ID = 250mA VDD = 30V, ID = 0.2A, VGEN = 10V, RGEN = 25Ω 5. Device mounted on FR-4 PCB, with minimum recommended pad layout 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN33D8L Document number: DS36124 Rev. 2 - 2 2 of 5 www.diodes.com June 2014 © Diodes Incorporated DMN33D8L 1.0 1 VDS = 5.0V 0.9 VGS = 10V VGS = 3.5V 0.6 VGS = 2.5V 0.5 0.4 0.3 VGS = 2.0V 0.1 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 0.7 0.4 TA = 150°C 0.2 T A = 125°C VGS = 1.8V 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics VGS = 4.0V VGS = 4.5V VGS = 10V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 VGS = 2.5V 0.01 0.6 TA = 85°C T A = 25°C T A = -55°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) 0.8 VGS = 4.5V 0.2 0.8 0 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.60 VGS = 4.5V T A = 150°C 0.50 T A = 125°C 0.40 TA = 85°C TA = 25°C 0.30 TA = -55°C 0.20 0.10 0.00 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT NEW PRODUCT 0.8 1.5 VGS = 4.5V ID = 250mA 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN33D8L Document number: DS36124 Rev. 2 - 2 3 of 5 www.diodes.com 0.4 VGS = 4.5V ID = 250mA 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature June 2014 © Diodes Incorporated 1 1.8 0.9 1.6 0.8 1.4 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 2 ID = 1mA 1.2 ID = 250µA 1 0.8 0.6 0.4 0.6 0.5 TA = 150°C 0.4 TA = 125°C 0.3 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature T A = 25°C TA = 85°C TA = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 VGS GATE THRESHOLD VOLTAGE (V) 1000 f = 1MHz 100 Ciss 10 C oss Crss 1 0.7 0.1 0.2 CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT NEW PRODUCT DMN33D8L 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 30 8 6 VDS = 10V ID = 250mA 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 1.4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm B C H K J M K1 F D G DMN33D8L Document number: DS36124 Rev. 2 - 2 L 4 of 5 www.diodes.com June 2014 © Diodes Incorporated DMN33D8L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT NEW PRODUCT Y Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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