BCX5316Q Description Features Mechanical Data Applications

BCX5316Q
80V PNP MEDIUM POWER TRANSISTOR IN SOT89
Description
Mechanical Data
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of automotive applications.
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Features
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BVCEO > -45V, -60V & -80V
IC = -1A Continuous Collector Current
ICM = -2A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < -500mV @ -0.5A
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Complementary NPN Types: BCX5616Q
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Finish Leads.
Solderable per MIL-STD-202 Method 208 e3
Weight: 0.055 grams (Approximate)
Applications
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Automotive
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
SOT89
C
E
C
C
B
B
E
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Notes 4 & 5)
Product
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
BCX5316QTA
Automotive
AL
7
12
1,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT89
AL
BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
AL = Product Type Marking Code
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BCX5316Q
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-80
V
VEBO
-5
V
Continuous Collector Current
IC
-1
Peak Pulse Collector Current
ICM
-2
Continuous Base Current
IB
-100
Peak Pulse Base Current
IBM
-200
Emitter-Base Voltage
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Symbol
(Note 6)
(Note 7)
(Note 8)
(Note 6)
(Note 7)
(Note 8)
Value
PD
RθJA
(Note 9)
Unit
1
1.5
2.0
125
83
60
W
°C/W
RθJL
13
°C/W
TJ, TSTG
-65 to +150
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
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BCX5316Q
1.0
Thermal Resistance (°C/W)
Max Power Dissipation (W)
Thermal Characteristics and Derating Information
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
Temperature (°C)
120
100
80
D=0.5
60
40
Single Pulse
D=0.2
D=0.05
20
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Derating Curve
Max Power Dissipation (W)
100
Single Pulse. T amb=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
140.0
3
T amb=25°C
120.0
100.0
80.0
1oz copper
60.0
40.0
Maximum Power (W)
Thermal Resistance (°C/W)
Pulse Power Dissipation
2oz copper
0
500
1000
1500
2000
2500
Copper Area (sqmm)
BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
2oz copper
2
1oz copper
1
0
T amb=25°C
0
500
1000
1500
2000
2500
Copper Area (sqmm)
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BCX5316Q
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
BVCBO
-100
—
—
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
-80
—
—
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-5
—
—
V
IE = -10µA
Collector Cut-Off Current
ICBO
—
—
-0.1
-20
μA
VCB = -30V
VCB = -30V, TJ = +150°C
Emitter Cut-Off Current
IEBO
—
—
-20
nA
VEB = -5V
—
—
hFE
25
100
25
—
—
250
—
IC = -5mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
Static Forward Current Transfer Ratio (Note 11)
—
Test Condition
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)
—
—
-0.5
V
IC = -500mA, IB = -50mA
Base-Emitter Turn-On Voltage (Note 11)
VBE(on)
—
—
-1.0
V
IC = -500mA, VCE = -2V
Transition Frequency
fT
150
—
—
MHz
IC = -50mA, VCE = -10V
f = 100MHz
Output Capacitance
Cobo
—
—
25
pF
VCB = -10V, f = 1MHz
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Note:
500
1.0
VCE = -5V
IB = 8mA
0.8
400
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
IB = 10mA
IB = 6mA
0.6
IB = 4mA
0.4
IB = 2mA
T A = 150°C
300
T A = 85°C
200
100
0.2
0
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
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T A = 25°C
T A = -55°C
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 2 Typical DC Current Gain vs. Collector Current
May 2015
© Diodes Incorporated
0.5
-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
1.0
0.8
TA = -55°C
0.6
TA = 25°C
T A = 85°C
0.4
T A = 150°C
0.2
0.4
0.3
TA = 150°C
0.2
TA = 85°C
TA = 25°C
0.1
VCE = -2V
0
0.001
TA = -55°C
0.01
0.1
1
-IC, COLLECTOR CURRENT(A)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.001
10
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
300
fT, GAIN-BANDWIDTH PRODUCT (MHz)
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
BCX5316Q
1.0
0.8
TA = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 150°C
0.2
IC / IB = 10
250
200
150
100
VCE = -5V
f = 100MHz
50
0
0
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0
20
40
60
80
100
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
160
140
f = 1MHz
CAPACITANCE(pF)
120
100
80
Cibo
60
40
20
Cobo
0
0
10
20
30
40
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
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BCX5316Q
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D1
0
.20
c
R0
SOT89
Dim Min Max
Typ
A
1.40 1.60
1.50
B
0.50 0.62
0.56
B1 0.42 0.54
0.48
c
0.35 0.43
0.38
D
4.40 4.60
4.50
D1 1.62 1.83 1.733
D2 1.61 1.81
1.71
E
2.40 2.60
2.50
E2 2.05 2.35
2.20
e
1.50
H
3.95 4.25
4.10
H1 2.63 2.93
2.78
L
0.90 1.20
1.05
L1
0.427 REF
Z
0.30 REF
All Dimensions in mm
H
E
B1
L
B
e
D2
8°
(4X
)
H1
E2
A
L1
D
z
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2
Dimensions
Y3
Y1
Y4
X
Y
C
G
X
X1
X2
Y
Y1
Y2
Y3
Y4
G
Y2
Value
(in mm)
1.500
0.244
0.580
0.760
1.933
1.730
3.030
1.500
0.770
4.530
X1
C
BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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BCX5316Q
Datasheet Number: DS37033 Rev. 2 - 2
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