DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. @ VGS = -4.5V, TA Features and Benefits = +25°C) NEW PRODUCT LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 80mΩ to Minimize On-State Losses Qg = 3.3nC for Ultra-Fast Switching Vgs(th) = -0.7V typ. for a Low Turn-On Potential performance, making it ideal for high-efficiency power management applications. CSP with Footprint 1.5mm × 1.5mm Height = 0.62mm for Low Profile ESD = 3kV HBM Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data VDSS RDS(on) Qg Qgd ID -20V 80mΩ 3.3nC 0.6nC -4A Description This new generation MOSFET is designed to minimize the on-state resistance (RD1D2(ON)) and yet maintain superior switching Battery Management Load Switch Battery Protection ESD PROTECTED TO 3kV Case: U-WLB1515-9 Terminal Connections: See Diagram Below Weight: 0.0018 grams (Approximate) G1 D1 D1 SS D2 D1 G2 D2 D2 Top View Ordering Information (Note 4) Part Number DMP2100UCB9-7 Notes: Case U-WLB1515-9 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-WLB1515-9 6W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 6W YM Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMP2100UCB9 Document number: DS35725 Rev. 5 - 2 Mar 3 2014 B Apr 4 May 5 2015 C Jun 6 1 of 6 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D May 2015 © Diodes Incorporated DMP2100UCB9 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VD1D2 VGS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State Continuous Drain Current (Note 6) VGS = -4.5V Steady State TC = +25°C TC = +70°C TC = +25°C TC = +70°C Value -20 -6 -3.0 -2.1 ID1D2 A -4.0 -3.0 -2.0 -0.4 -15 -28 -6 ID1D2 Continuous Source Pin Current (Note 6) Continuous Gate Clamp Current (Note 6) Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤ 1%) Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤ 1%) Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤ 1%) Units V V IS IG ISM IDM IGM A A A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Total Power Dissipation (Note 6) Symbol PD Value 0.8 1.6 Units W W Thermal Resistance, Junction to Ambient (Note 5) PD RθJA 152 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 65 °C/W TJ, TSTG -55 to +150 °C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current @TC = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit BVD1D2 -20 VGS = 0V, ID1D2 = -250μA V IGS = -250μA, VD1D2 = 0V IDDS -6.1 — — — V BVGSS — — — — — μA nA VD1D2 = -16V, VGS = 0V IGSS -1 -100 VGS(th) -0.4 -0.7 -0.9 V — — — 80 100 VD1D2 = VGS, IDS = -250μA VGS = -4.5V, ID1D2 =- 1A 105 130 140 175 RD1D2(ON) Forward Transfer Admittance DIODE CHARACTERISTICS Diode Forward Voltage (Note 6) |Yfs| — 5.3 — VSD — -0.7 Reverse Recovery Charge Reverse Recovery Time DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Qrr — -1 — trr — 18 34 mΩ VD1D2 = -10V, ID1D2 = -1A V VGS = 0V, ID1D2 = -1A — nC ns Vdd = -9.5V, IF = -1A, di/dt = 200A/μs pF pF — — — 232 107 43.5 310 150 55 pF Qg — 3.3 nC Gate-Source Charge Qgs — 0.3 4.2 — Gate-Drain Charge Qgd — 0.6 — nC Qg(th) — 0.2 — — — 8.5 7.0 — — nC ns Turn-On Rise Time tD(on) tr Turn-Off Delay Time tD(off) — 47 — ns tf — 28 — ns Gate Charge at Vth Turn-On Delay Time Turn-Off Fall Time Notes: VGS = -2.5V, ID1D2 = -1A VGS = -1.8V, ID1D2 = -1A Ciss Total Gate Charge (4.5V) VGS = -6V, VDS = 0V S Coss Crss Reverse Transfer Capacitance Test Condition nC ns VD1D2 = -10V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VD1D2 = -10V, ID1D2 = -1A VD1D2 = -10V, VGS = -4.5V, ID1D2 = -1A, RG = 30Ω, 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP2100UCB9 Document number: DS35725 Rev. 5 - 2 2 of 6 www.diodes.com May 2015 © Diodes Incorporated DMP2100UCB9 5 VGS = -4.5V VGS = -2.5V VDS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -1.8V VGS = -1.5V 3 2 VGS = -1.2V TA = 150C 1 0 TA = 125C 0 0.5 1.0 1.5 2.0 2.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0 3.0 R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) TA = 85C TA = 25 C TA = -55 C 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 1.2 0.5 1.0 1.5 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2.0 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 3 On-Resistance Variation with Temperature 0 1 2 3 4 5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage 6 10 9 1.0 8 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE(V) NEW PRODUCT 4 0.8 0.6 0.4 0.2 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature DMP2100UCB9 Document number: DS35725 Rev. 5 - 2 3 of 6 www.diodes.com 0 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 6 Diode Forward Voltage vs. Current 1.4 May 2015 © Diodes Incorporated DMP2100UCB9 6 -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) Ciss Coss 5 4 3 2 1 C rss 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Junction Capacitance 0 20 0 1 2 3 Qg, TOTAL GATE CHARGE (nC) Fig. 8 Gate-Charge Characteristics 4 100 -ID, DRAIN CURRENT (A) PW = 10µs RDS(on) Limited 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150°C TA = 25°C Single Pulse DUT on 1 * MRP Board VGS = -6V 0.01 0.1 PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 SOA, Safe Operation Area 100 1 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT f = 1MHz D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 70°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.0001 DMP2100UCB9 Document number: DS35725 Rev. 5 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Fig. 10 Transient Thermal Resistance 4 of 6 www.diodes.com 100 1,000 May 2015 © Diodes Incorporated DMP2100UCB9 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. NEW PRODUCT D 9x-Ø b Pin #1 ID U-WLB1515-9 e E e e e A3 A2 Dim Min Max Typ A -0.62 -A2 -0.36 0.36 A3 0.020 0.030 0.025 b 0.27 0.37 0.32 D 1.47 1.50 1.49 E 1.47 1.50 1.49 e --0.50 All Dimensions in mm A SEATING PLANE Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. D Dimensions C1 C C C1 C2 D Value (in mm) 0.50 1.00 1.00 0.25 C C2 DMP2100UCB9 Document number: DS35725 Rev. 5 - 2 5 of 6 www.diodes.com May 2015 © Diodes Incorporated DMP2100UCB9 IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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