MMST5401 160V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data • Epitaxial Planar Die Construction • • Ultra-Small Surface Mount Package • • Complementary PNP Type: MMST5551 Case: SOT323 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 • Ideal for Low Power Amplification and Switching • Moisture Sensitivity: Level 1 per J-STD-020 • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • • Halogen and Antimony Free. “Green” Device (Note 3) Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 e3 • Qualified to AEC-Q101 Standards for High Reliability • Weight: 0.006 grams (approximate) • PPAP Capable (Note 4) C SOT323 B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Compliance AEC-Q101 AEC-Q101 Automotive Device MMST5401-7-F MMST5401-13-F MMST5401Q-7-F Notes: Marking K4M K4M K4M Reel Size (inches) 7 13 7 Tape Width (mm) 8 8 8 Quantity per reel 3,000 10,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. xxx K4M Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 MMST5401 Document number: DS30170 Rev. 10 - 2 Mar 3 YM Marking Information K4M = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: A = 2013) M or M = Month (ex: 9 = September) 2012 Z Apr 4 2013 A May 5 Jun 6 1 of 4 www.diodes.com 2014 B Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D May 2014 © Diodes Incorporated MMST5401 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Symbol VCBO VCEO VEBO IC Value -160 -150 -5.0 -200 Unit V V V mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD Value 200 Unit mW RθJA 625 °C/W TJ,TSTG -55 to +150 °C ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage Symbol Min Max Unit Test Condition VCBO -160 ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage VCEO -150 ⎯ V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage VEBO -5.0 ⎯ V IE = -10μA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = +100°C VEB = -3.0V, IC = 0 Collector Cutoff Current ICBO ⎯ -50 nA µA Emitter Cutoff Current ON CHARACTERISTICS (Note 8) IEBO ⎯ -50 nA DC Current Gain hFE 50 60 50 Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ 240 ⎯ -0.2 -0.5 Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.0 V Cobo ⎯ 6.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 40 200 ⎯ Current Gain-Bandwidth Product fT 100 300 MHz NF ⎯ 8.0 dB VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -200µA, RS =10Ω, f = 1.0kHz SMALL SIGNAL CHARACTERISTICS Output Capacitance Noise Figure Notes: ⎯ V IC = IC = IC = IC = IC = IC = IC = -1.0mA , VCE = -5.0V -10mA, VCE = -5.0V -50mA, VCE = -5.0V -10mA, IB = -1.0mA -50mA, IB = -5.0mA -10mA, IB = -1.0mA -50mA, IB = -5.0mA 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMST5401 Document number: DS30170 Rev. 10 - 2 2 of 4 www.diodes.com May 2014 © Diodes Incorporated MMST5401 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 200 10.0 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) Note 1 150 100 50 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V hFE, DC CURRENT GAIN 0.1 0.01 1 200 10,000 1,000 T A = 150°C 100 TA = 25°C TA = -50°C 10 1 1 1.0 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current 0.9 VCE = 5V TA = -50°C 0.8 0.7 0.6 T A = 25°C 0.5 0.4 TA = 150°C 0.3 0.2 0.1 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 1,000 ft, GAIN BANDWIDTH PRODUCT (MHz) VCE = 10V 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current 1 MMST5401 Document number: DS30170 Rev. 10 - 2 3 of 4 www.diodes.com May 2014 © Diodes Incorporated MMST5401 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X Note: Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. MMST5401 Document number: DS30170 Rev. 10 - 2 4 of 4 www.diodes.com May 2014 © Diodes Incorporated MMST5401 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com MMST5401 Document number: DS30170 Rev. 10 - 2 5 of 4 www.diodes.com May 2014 © Diodes Incorporated