DMP32D4SW-7 - Diodes Incorporated

DMP32D4SW
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
V(BR)DSS
RDS(on) Max
-30V
2.4 @ VGS = -10V
4 @ VGS = -4.5V

ID Max
@ TA = 25C
-250mA
-200mA
Low On-Resistance

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications



Load Switch

Portable Applications

Power Management Functions
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).

Weight: 0.006 grams (approximate)
Drain
SOT323
D
Gate
Top View
Gate
Protection
Diode
S
G
ESD PROTECTED
Top View
Pin-out
Source
Equivalent Circuit
Ordering Information (Note 4)
Product
DMP32D4SW-7
DMP32D4SW-13
Notes:
Marking
P32D
P32D
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
P32D
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
2013
A
Feb
2
DMP32D4SW
Document number: DS35823 Rev. 3 - 2
Mar
3
P32D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
YM
ADVANCE
INFORMATION
NEW PRODUCT
Product Summary
2014
B
Apr
4
May
5
2015
C
Jun
6
1 of 6
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2016
D
Jul
7
Aug
8
2017
E
Sep
9
Oct
O
2018
F
Nov
N
Dec
D
March 2013
© Diodes Incorporated
DMP32D4SW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ADVANCE
INFORMATION
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
VGS = -10V
TA = +25°C
TA = +70°C
Value
-30
±20
250
200
-1
ID
Pulsed Drain Current (Note 6)
IDM
Unit
V
V
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 5)
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Value
300
432
398
290
142
-55 to 150
PD
RθJA
RθJC
TJ, TSTG
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
-
-
-1
±10
V
µA
µA
VGS = 0V, ID = -1mA
VDS = -30V, VGS = 0V
VGS = ±16V, VDS = 0V
VGS(th)
-1.4
-
V
Static Drain-Source On-Resistance
RDS (ON)
-
-
|Yfs|
VSD
-
6
0.8
-2.4
2.4
4
1.2
VDS = VGS, ID = -250μA
VGS = -10V, ID = -0.5A
VGS = -4.5V, ID = -0.3A
VDS = -10V, ID = -400mA
VGS = 0V, IS = -300mA
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
51.16
10.85
8.88
275
0.6
1.2
0.2
0.3
9.86
11.5
31.8
21.9
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Ω
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V
VDS = -10V,
VGS = -10V ID = -1A
VDS = -15V, ID = -1A
VGS = -10V, RG = 6Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP32D4SW
Document number: DS35823 Rev. 3 - 2
2 of 6
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March 2013
© Diodes Incorporated
DMP32D4SW
2.0
2.0
1.8
VGS = -10V
1.0
VGS = -3.5V
0.5
1.2
1.0
0.8
0.6
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.8
VGS = -2.5V
0.6
0.5
0.4
VGS = -4.5V
0.3
0.2
0.1
0
0.5
1.0
1.5
2.0
2.5
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
5
0.9
0.7
3.0
T A = 85C
TA = 25 C
T A = -55C
0
1
2
3
4
-VGS , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
1.5
ID = -0.5A
1.2
ID = -0.3A
0.9
0.6
0.3
0
0
2
4
6
8 10 12 14 16 18 20
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.6
1.4
1.2
VGS = -4.5V
VGS = -10V
ID = -1.0A
T A = 150 C
1.0
TA = 125C
T A = 85C
0.8
TA = 25C
0.6
TA = -55 C
0.4
0.2
0
0
TA = 150C
TA = 125C
0.2
1.0
0
1.4
0.4
VGS = -3.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
-ID, DRAIN CURRENT (A)
VGS = -4.5V
VGS = -4.0V
0
VDS = -5.0V
1.6
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
-ID, DRAIN CURRENT (A)
1.5
VGS = -2.5V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE
INFORMATION
NEW PRODUCT
VGS = -5.0V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMP32D4SW
Document number: DS35823 Rev. 3 - 2
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1.4
VGS = -4.5V
ID = -500mA
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
March 2013
© Diodes Incorporated
2.6
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
1.5
1.2
0.9
VGS = -4.5V
ID = -500mA
0.6
VGS = -10V
ID = -1.0A
0.3
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
2.4
2.2
-ID = 1mA
2.0
1.8
-ID = 250µA
1.6
1.4
1.2
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
2.0
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
1.8
-IS, SOURCE CURRENT (A)
1.6
1.4
1.2
1.0
0.8
TA= 150C
0.6
TA= 125C
0.4
0
TA= 85C
TA= 25C
0.2
TA= -55C
0
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
100
Ciss
Coss
10
Crss
1
0
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
10
-VGS, GATE-SOURCE VOLTAGE (V)
ADVANCE
INFORMATION
NEW PRODUCT
DMP32D4SW
8
VDS = -10V
ID = -1A
6
4
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
DMP32D4SW
Document number: DS35823 Rev. 3 - 2
1.4
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© Diodes Incorporated
DMP32D4SW
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE
INFORMATION
NEW PRODUCT
A
SOT323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
0.65
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
0.95
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°

All Dimensions in mm
B C
G
H
K
M
J
L
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
DMP32D4SW
Document number: DS35823 Rev. 3 - 2
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
1.9
E
1.0
E
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DMP32D4SW
IMPORTANT NOTICE
ADVANCE
INFORMATION
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMP32D4SW
Document number: DS35823 Rev. 3 - 2
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March 2013
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