NOT RECOMMENDED FOR NEW DESIGNS DLP3V3DTZ DUAL UNIDIRECTIONAL AND SINGLE BIDIRECTIONAL TVS Please click here to visit our online spice models database. General Descriptions • This Transient Voltage Suppressor (TVS) diode is designed for dual unidirectional or single bidirectional protection for data lines, components or circuits from damage due to electrostatic discharge (ESD), cable discharge events(CDE) and lightning (see IPPM below). It offers high ESD capability, low reverse leakage, low junction capacitance and low clamping voltage over range of temperature. They are suitable for computers, communication systems, hand held portables, high density PC boards and peripherals. Features • • • • • • 372 Watts Peak Pulse Power (tp=8/20 μS) AEC-Q101 (Human Body Model- 8kV, Machine Model-400V) and 25 kV(air)/ 8 kV(contact) as per IEC61000-4-2(ESD) Dual Unidirectional and Single Bidirectional Configuration Lead Free By Design/ROHS Compliant (Note 2) "Green" Device (Note 3 & 4) Surface Mount Package Suited for Automated Assembly GND N/C 3 3 D1 D2 D1 D2 Mechanical Data • • • • • • • • Case: SOT-23 Case Material: "Green” Molding Compound (Molded Plastic). UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Fig. 1 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 6 Ordering Information: See Page 6 Weight: 0.008 grams (approximate) Absolute Maximum Ratings 1 Line1_in 2 1 Line2_in 2 Line_in A. Unidirectional Protection for two Lines GND B. Bidirectional Protection for a single Line Fig. 1: Schematic and Pin Configuration @TA = 25°C unless otherwise specified Characteristic Peak Pulse Power (tp=8/20μS) Symbol Unidirectional Bidirectional Continuous Power Dissipation (Note1) Maximum Peak Pulse Current (tp=8/20 μS) Value 372 Ppp Bidirectional Forward Surge Current (8.3 ms half sine-wave) W 145 300 PD Unidirectional Unit mW 40 IPP A 15 10.5 IFSM A ± 25 ESD per IEC 6100--4-2(air) Vpp ESD per IEC 6100--4-2(contact) kV ±8 Thermal Characteristics Characteristic Symbol Value Operating and Storage Junction Temperature Range Tj, Tstg -55 to +150 Thermal Resistance, Junction to Ambient Air (Note1) RθJA 420 Notes: Unit ° C °C/W 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30669 Rev. 3 - 3 1 of 8 www.diodes.com DLP3V3DTZ © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGNS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit V Pin 1 to 3 or Pin 2 to 3 Test Condition VRWM ⎯ ⎯ 3.3 Breakdown Voltage VBR 4.5 ⎯ ⎯ V Pin 1 to 3 or Pin 2 to 3 @ IT = 1mA Forward Voltage VF ⎯ 0.8 ⎯ V Pin 3 to 1 or Pin 3 to 2, IF = 10mA mA Rated Reverse Standoff Voltage ⎯ ⎯ 0.095 Unidirectional ⎯ ⎯ 6.0 Bidirectional Unidirectional Bidirectional ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.0 9.3 9.666 Reverse Leakage Current @VRWM Clamping Voltage (Note 5) Junction Capacitance IR Vc Unidirectional ⎯ ⎯ 420 Bidirectional ⎯ ⎯ 210 ⎯ ⎯ 230 ⎯ ⎯ 115 Unidirectional Cj Bidirectional Dynamic Resistance @ Ipp (large signal) Dynamic Impedance (small signal) Temperature Coefficient Notes: V V Pin 1 to 3 or Pin 2 to 3 Ipp = 1A (Pin 1 to 3 or Pin 2 to 3 Ipp=1A (Pin 1 to 2 or Pin 2 to 1,Pin 3 = nc) Ipp = 40A (Pin 1 to 3 or Pin 2 to 3) Ipp=15A (Pin 1 to 2 or Pin 2 to 1, Pin 3 = nc) pF VR = 0V, f = 1 MHz pF VR = 3.3V, f = 1 MHz Ipp= 40A,Vc = 9.3V,VBR = 4.5V (Pin 1 to 3 or 2 to 3) IR = 1 mA, f = 1 KHz (Pin 1 to 3 or 2 to 3) IR = 5 mA, f = 1 KHz (Pin 1 to 3 or 2 to 3) Unidirectional Rd ⎯ 0.115 ⎯ Ω Unidirectional ZZt ⎯ ⎯ 380 47 ⎯ ⎯ Ω Ω Unidirectional θvz ⎯ -1.07 ⎯ mV/°C IR = 5 mA (Pin 1 to 3 or 2 to 3) 5. Clamping voltage value is based on a tp = 8/20 μS peak pulse current (Ipp) waveform. Typical Characteristics @Tamb = 25°C unless otherwise specified IPP, PEAK PULSE CURRENT (%Ipp) 372 W, 8/20 μS waveform 100 50 0 0 td, PULSE DECAY TIME (μS) Fig. 2 Unidirectional Non-Repetitive Peak Pulse Power vs. Pulse Duration or Pulse Width DS30669 Rev. 3 - 3 2 of 8 www.diodes.com 20 40 t, TIME (μs) Fig. 3 Pulse Waveform 60 DLP3V3DTZ © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGNS Unidirectional Vc, CLAMPING VOLTAGE (V) % OF RATED POWER OR Ipp Peak Pulse Power 8/20 μs Bidirectional 0 TA, AMBIENT TEMPERATURE (°C) Fig. 4 Power Derating Curve 5 10 15 20 25 30 35 40 45 Ipp, PEAK PULSE CURRENT (A) Fig. 5 Clamping Voltage vs. Peak Pulse Current Single TVS Diode Characteristics: 400 380 IR, LEAKAGE CURRENT (μA) f = 1MHz Cj, CAPACITANCE (pF) 360 340 320 300 280 260 IR(uA) Ave @ -55°C 240 220 200 VR, REVERSE VOLTAGE (V) Fig. 7 Leakage Current vs. Reverse Voltage VR, REVERSE VOLTAGE (V) Fig. 6 Junction Capacitance vs. Reverse Voltage IF, FORWARD CURRENT (mA) IR, LEAKAGE CURRENT (mA) Ave VF(V) @ -55°C 0 0.2 0.4 0.6 0.8 1 1.2 VF, FORWARD VOLTAGE (V) Fig. 8 Typical Forward Characteristic DS30669 Rev. 3 - 3 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Reverse Characteristic 3 of 8 www.diodes.com DLP3V3DTZ © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGNS 0.0015 ZZT, DYNAMIC IMPEDANCE (Ohm) 0.001 0.0005 0 -0.0005 -0.001 -0.0015 -0.002 -0.0025 0 10 20 30 40 50 60 IR, REVERSE CURRENT (mA) Fig. 10 Temperature Coefficient vs. Reverse Current IR, REVERSE CURRENT (mA) Fig. 11 Dynamic Impedance vs. Reverse Current (Small Signal) Circuit Diagram Power/Data(3.3v) Line to be Protected Power/Data(3.3v) Line2 to be Protected Power/Data(3.3v) Line1 to be Protected D1 Unidirectional TVS Protection for Two Lines D1 Bidirectional TVS Protection for a Single Line D2 D2 Note: D1, D2 - TVS Zener Diode Note: D1, D2 - TVS Zener Diode Fig. 12 DS30669 Rev. 3 - 3 4 of 8 www.diodes.com DLP3V3DTZ © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGNS Typical Application Circuit Unidirectional Protection for Two 3.3V Dataline U1 D+ External Device out1 out2 1 3 1 4 2 3 Vin 2 4 Output Connector D- IC U2 Line 1_in 2 3 Line 2_in 1 DLP3V3DTZ Diodes Inc. Fig. 13 Bidirectional Protection for 3.3v Power Supply Bus 3.3v Vcc Supply Bus U2 U1 Vin Line_in Out1 1 6 2 5 3 4 1 In1 3 2 Out2 In2 DLP3V3DTZ IC Diodes Inc. Fig. 14 DS30669 Rev. 3 - 3 5 of 8 www.diodes.com DLP3V3DTZ © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGNS Application Information Protection from ESD It is a fact that ESD is the primary cause of failure in electronic systems. Transient Voltage Suppressors(TVS) are an ideal choice for using as ESD protection devices. They have the capability to clamp the incoming transient to such a low level that the damage to the circuit beyond the device is prevented. Surface mount TVS are the best choice for minimum lead inductance. DLP3V3DTZ is designed to be used as two unidirectional or single bidirectional protection device in a circuit. They serve as parallel protection elements, connected between the signal line to ground. It will present a high impedance to the protected line up to 3.3 volts. As the transient rises above the operating voltage which is the breakdown voltage of the device, the TVS diode becomes a low impedance path diverting the transient current to ground. Dynamic Resistance to Calculate Clamping Voltage At times PCB designers need to calculate the clamping voltage VCL. For this reason the dynamic resistance in addition to the typical parameters is listed here. The voltage across the protected circuitry can be calculated as following: VCL = VBR + Rd * Ipp (also VCL= Vz + Rd*Ipp....for accuracy) e.g. If Ipp = 1A, VCL = Vz + Rd*Ipp = 5.6 V (from fig. 9) + 1A*0.115 Ohm = (5.6+0.115)V = 5.715 V (close to actual measured Value) Where Ipp is the peak current through the TVS Diode. The short duration of the ESD has led us to a widely adapted classical test wave, 8/20 μS and 10/1000 μS surges. Since Zzt remains stable for a surge duration less than 20μS, the 2.5 μS rectangular surge is sufficient for use. Peak Pulse Power Calculation The following relation fits well for pulse width less than 10 mS. Ppp = K (td) -0.5 e.g. Ppp = 372 watts for pulse width(td) of 20 μS, then 372 watts = K (20) -0.5 Now, Ppp when td = 50 μS: Ppp =1663.63 (50) -0.5 0.5 = 1663.63/(50) -0.5 and K = 372/(20) = 372*√20 = 1663.63 = 1663.63/(√50) = 235.27 watts (close to measured value see fig. 2) Tips for Circuit Board Layout Correct layout of the circuit board plays a critical role in preventing ESD induced failures. Some of useful guidelines are given below: - Trace length between the TVS diode and the circuit or line to be protected should be kept to a minimum. - Always place a TVS diode as close as possible to the input terminals or connectors if one is required. - Try to avoid or minimize power and ground loops or any other conductive loops. - Try to use ground planes whenever feasible rather than a simple ground trace. - The path to ground for the ESD transient return should be as short as possible. Ordering Information (Note 4 & 6) Device DLP3V3DTZ-7 Notes: Packaging SOT-23 Shipping 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM A07 Date Code Key Year Code Month Code DS30669 Rev. 3 - 3 2006 T Jan 1 2007 U Feb 2 Mar 3 A07 = Product Type Marking Code YM = Date Code Marking Y = Year (e.g., T = 2006) M = Month (e.g., 1 = Janurary) 2008 V Apr 4 May 5 2009 W Jun 6 6 of 8 www.diodes.com 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D DLP3V3DTZ © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGNS Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DS30669 Rev. 3 - 3 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 7 of 8 www.diodes.com DLP3V3DTZ © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGNS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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