DMP1055UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) max ID MAX TA = +25°C -12V 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V -3.9A -3.3A -2.8A Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD protected gate. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Case: U-DFN2020-6 Type B Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (approximate) Load Switch Power Management Functions Portable Power Adaptors U-DFN2020-6 Type B D1 D2 S2 G2 D2 D1 D1 D2 G1 G2 G1 Gate Protection Diode S1 ESD PROTECTED Pin1 S1 Gate Protection Diode Q2 P-CHANNEL Q1 P-CHANNEL Bottom View S2 Internal Schematic Ordering Information (Note 4) Part Number DMP1055UFDB -7 DMP1055UFDB -13 Notes: Case U-DFN2020-6 Type B U-DFN2020-6 Type B Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMP1055UFDB Document number: DS36934 Rev.1 - 2 Mar 3 D6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM D6 2014 B Apr 4 May 5 2015 C Jun 6 1 of 6 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D April 2014 © Diodes Incorporated DMP1055UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Steady State t < 5s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -12 ±8 -3.9 -3.1 ID A -5.0 -4.0 -1.7 -25 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Units V V IS IDM A A A Thermal Characteristics Characteristic Symbol Steady State t < 5s Steady State t < 5s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value 1.36 1.89 92 66 18 -55 to +150 PD RθJA RθJC TJ, TSTG Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -1.0 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) — 37 48 69 88 -0.7 -1 59 81 115 215 -1.2 V Static Drain-Source On-Resistance -0.4 — — — — — mΩ VDS = VGS, ID = -250μA VGS = -4.5V, ID = -3.6A VGS = -2.5V, ID = -3.1A VGS = -1.8V, ID = -2.6A VGS = -1.5V, ID = -0.5A VGS = 0V, IS = -3.7A — — — — — — — — — — — — — — 1028 285 254 19.6 13 20.8 1.8 4.5 5.6 12.8 30.7 25.4 31.6 7.8 — — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns nS nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr V Test Condition VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -10V, ID = -4.7A VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω IS = -3.6A, dI/dt = 100A/μs IS = -3.6A, dI/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMP1055UFDB Document number: DS36934 Rev.1 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorporated DMP1055UFDB 20 VGS = -4.5V 18 VGS = -3.0V 16 -ID, DRAIN CURRENT (A) VGS = -3.5V VGS = -1.8V 14 12 VGS = -1.5V 10 8 6 VGS = -1.0V 4 10 8 6 0 0.5 1 1.5 2 2.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 3 VGS = -1.5V VGS = -2.5V VGS = -4.5V 0.001 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 1.8 1.6 VGS = -2.5V ID = -5.0A 1.4 1.2 1 VGS = -1.8V ID = -3.0A 0.8 0.6 0.4 0.2 0 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 12 TA = 150C -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP1055UFDB Document number: DS36934 Rev.1 - 2 3 of 6 www.diodes.com T A = 85C T A = 125 C 2 VGS = -0.9V VGS = -1.8V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 14 4 2 0 VDS = -5.0V 18 VGS = -4.0V 16 -ID, DRAIN CURRENT (A) 20 VGS = -2.0V TA = 25C TA = -55 C 0 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.06 VGS = -4.5V TA = 150C 0.05 TA = 125C T A = 85C 0.04 TA = 25C T A = -55C 0.03 0.02 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.1 0.09 VGS = -1.8V ID = -3.0A 0.08 0.07 0.06 0.05 VGS = -2.5V ID = -5.0A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMP1055UFDB 1 20 VGS(TH), GATE THRESHOLD VOLTAGE (V) 18 -IS, SOURCE CURRENT (A) 0.8 -ID = 1mA 0.6 -ID = 250µA 0.4 0.2 16 14 12 10 TA= 150°C 8 TA= 125°C 6 4 TA= -55°C 2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature T A= 25°C TA= 85°C 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 Ciss 1000 Coss C rss 100 10 100 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 12 VDS = -10V ID = -4.7A 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 25 RDS(on) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 PW = 1ms TJ(max) = 150°C TA = 25°C VGS = -4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA Safe Operation Area DMP1055UFDB Document number: DS36934 Rev.1 - 2 100 4 of 6 www.diodes.com April 2014 © Diodes Incorporated DMP1055UFDB 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 159°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 12 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 G X2 G1 X1 G Z DMP1055UFDB Document number: DS36934 Rev.1 - 2 Y1 5 of 6 www.diodes.com April 2014 © Diodes Incorporated DMP1055UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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