Green DMN5L06TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ESD Protected Up To 2kV Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Case: SOT523 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.002 grams (approximate) • • • • Drain SOT523 D Gate Gate Protection Diode ESD PROTECTED, 2kV TOP VIEW S G Source Equivalent Circuit Top View Ordering Information (Note 4) Part Number DMN5L06TK-7 Notes: Case SOT523 Packaging 3000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DAB Date Code Key Year Code Month Code 2006 T Jan 1 2007 U Feb 2 DMN5L06TK Document number: DS30926 Rev. 5 - 2 Mar 3 YM DAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) 2008 V Apr 4 May 5 2009 W Jun 6 1 of 6 www.diodes.com 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D July 2012 © Diodes Incorporated DMN5L06TK Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 5) Continuous Symbol VDSS VGSS ID Value 50 ±20 280 Units V V mA Symbol PD RθJA TJ, TSTG Value 150 833 -55 to +150 Units mW °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25°C Gate-Body Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Min Typ Max Unit BVDSS IDSS 50 ⎯ ⎯ ⎯ ⎯ 60 V nA IGSS ⎯ ⎯ 1 500 50 μA nA nA VGS(th) 0.49 ⎯ 1.8 1.5 1.2 1.2 V 3.0 2.5 2.0 Ω ID(ON) |Yfs| VSD ⎯ ⎯ ⎯ 0.5 200 0.5 1.4 ⎯ ⎯ ⎯ ⎯ 1.4 A mS V Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 50 25 5.0 pF pF pF RDS (ON) On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Test Condition VGS = 0V, ID = 10µA VDS = 50V, VGS = 0V VGS = ±12V, VDS = 0V VGS = ±10V, VDS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 1.8V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 5.0V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz 5. Device mounted on FR-4 PCB. 6. Short duration pulse test used to minimize self-heating effect. DMN5L06TK Document number: DS30926 Rev. 5 - 2 2 of 6 www.diodes.com July 2012 © Diodes Incorporated DMN5L06TK VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1 0 0 -50 75 100 125 150 -25 25 50 0 Tch , CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06TK Document number: DS30926 Rev. 5 - 2 3 of 6 www.diodes.com VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage July 2012 © Diodes Incorporated RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) IDR, REVERSE DRAIN CURRENT (A) DMN5L06TK |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current DMN5L06TK Document number: DS30926 Rev. 5 - 2 4 of 6 www.diodes.com July 2012 © Diodes Incorporated DMN5L06TK Package Outline Dimensions A B C G H K M N J L D SOT523 Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 0.50 ⎯ ⎯ G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout Y Z C X DMN5L06TK Document number: DS30926 Rev. 5 - 2 Dimensions Value (in mm) Z 1.8 X 0.4 Y 0.51 C 1.3 E 0.7 E 5 of 6 www.diodes.com July 2012 © Diodes Incorporated DMN5L06TK IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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