BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. • AF Driver and Output Stages Features Mechanical Data • BVCEO > -80V • • IC = -1A High Continuous Collector Current • • ICM = -2A Peak Pulse Current • • 2W Power Dissipation Low Saturation Voltage VCE(sat) < -500mV @ -0.5A • Complementary NPN type: BCP5616Q • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Case: SOT223 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 • • Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 • Qualified to AEC-Q101 Standards for High Reliability • PPAP Capable (Note 4) • Weight: 0.112 grams (approximate) C SOT223 B E Top View Top View Pin-Out Device Symbol Ordering Information (Note 5) Product BCP5316QTA Notes: Compliance Automotive Marking BCP 5316 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html BCP 5316 BCP5316Q Datasheet Number: DS36980 Rev. 2 - 2 YWW Marking Information BCP = Product Type Marking Code, Line 1 5316 = Product Type Marking Code, Line 2 YWW = Date Code Marking Y = Last Digit of the Year ex: 2 = 2012 WW = Week Code 01-52 1 of 6 www.diodes.com May 2014 © Diodes Incorporated BCP5316Q Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -1 Peak Pulse Collector Current ICM -2 A Continuous Base Current IB -100 Peak Pulse Base Current IBM -200 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Power Dissipation Characteristic (Note 6) PD 2 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 62 °C/W Thermal Resistance, Junction to Leads (Note 7) RθJL 19.4 °C/W TJ, TSTG -65 to +150 °C Operating and Storage Temperature Range ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Symbol ESD HBM Value 4,000 Unit V JEDEC Class 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. BCP5316Q Datasheet Number: DS36980 Rev. 2 - 2 2 of 6 www.diodes.com May 2014 © Diodes Incorporated BCP5316Q 160 60 50mm x 50mm 1oz Cu Tamb = 25°C 50 40 Maximum Power (W) Thermal Resistance (°C/W) Thermal Characteristics and Derating Information D=0.5 30 20 D=0.2 Single Pulse D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 120 Single pulse 100 80 60 40 20 1k 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Max Power Dissipation (W) 50mm x 50mm 1oz Cu Tamb = 25°C 140 Pulse Power Dissipation 50mm x 50mm 1oz Cu 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve BCP5316Q Datasheet Number: DS36980 Rev. 2 - 2 3 of 6 www.diodes.com May 2014 © Diodes Incorporated BCP5316Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol Min Typ Max Unit Collector-Base Breakdown Voltage Characteristic BVCBO -100 — — V Collector-Emitter Breakdown Voltage (Note 9) BVCEO -80 — — V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -5 — — V IE = -10µA Collector Cut-off Current ICBO — — -0.1 -20 µA VCB = -30V VCB = -30V, TA = +150°C Emitter Cut-off Current IEBO — — -20 nA VEB = -4V Static Forward Current Transfer Ratio (Note 9) hFE 25 100 25 — — — 250 — IC = -5mA, VCE = -2V IC = -150mA, VCE = -2V IC = -500mA, VCE = -2V Collector-Emitter Saturation Voltage (Note 9) VCE(sat) — — -0.5 V IC = -500mA, IB = -50mA Base-Emitter Turn-On Voltage (Note 9) VBE(on) — — -1.0 V IC = -500mA, VCE = -2V Transition Frequency fT 150 — — MHz IC = -50mA, VCE = -10V f = 100MHz Output Capacitance Cobo — — 25 pF Notes: Test Condition IC = -100µA — — VCB = -10V, f = 1MHz 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. 500 1.0 VCE = -5V hFE, DC CURRENT GAIN 400 IB = 6mA 0.6 IB = 4mA 0.4 IB = 2mA 0.2 0 -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) IB = 8mA 0.8 T A = 150°C 300 200 100 0 T A = 85°C T A = 25°C T A = -55°C 0 0.001 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current 0.5 1.0 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC, COLLECTOR CURRENT (A) IB = 10mA 0.8 TA = -55°C 0.6 0.4 TA = 25°C TA = 85°C TA = 150°C 0.2 VCE = -2V 0 0.001 0.01 0.1 1 -IC, COLLECTOR CURRENT(A) Fig 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current BCP5316Q Datasheet Number: DS36980 Rev. 2 - 2 0.4 0.3 TA = 150°C 0.2 TA = 85°C TA = 25°C 0.1 TA = -55°C 10 4 of 6 www.diodes.com 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current May 2014 © Diodes Incorporated 300 1.2 fT, GAIN-BANDWIDTH PRODUCT (MHz) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) BCP5316Q 1.0 0.8 T A = -55°C 0.6 0.4 TA = 25°C TA = 85°C TA = 150°C 0.2 IC / IB = 10 250 200 150 100 VCE = -5V f = 100MHz 50 0 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 20 40 60 80 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current 160 140 f = 1MHz CAPACITANCE(pF) 120 100 80 Cibo 60 40 20 Cobo 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 b 0° e A1 -1 0° 7° 7° A L SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm BCP5316Q Datasheet Number: DS36980 Rev. 2 - 2 5 of 6 www.diodes.com May 2014 © Diodes Incorporated BCP5316Q Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 Dimensions X1 X2 Y1 Y2 C1 C2 C1 Y2 X2 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 C2 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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