DMP210DUDJ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) -20V 5.5Ω @ VGS = -4.5V 7.5Ω @ VGS = -2.5V ID TA = +25°C -200mA -170mA Dual P-Channel MOSFET Low On-Resistance 5.5Ω @ -4.5V 7.5Ω @ -2.5V 11.5Ω @ -1.8V 17.5Ω @ -1.5V Very Low Gate Threshold Voltage VGS(TH) <1.15V Description Low Input Capacitance This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) performance, making it ideal for high efficiency power management applications. Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications DC-DC Converters Power Management Functions Case: SOT963 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.0027 grams (approximate) SOT963 ESD protected Top View D2 G1 S1 S2 G2 D1 Internal Schematic Ordering Information (Note 4) Part Number DMP210DUDJ-7 Notes: Case SOT963 Packaging 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information (Note 5) P1 Note: P1 = Product Type Marking Code 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). DMP210DUDJ Document number: DS31494 Rev. 9 - 2 1 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP210DUDJ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C TA = +70°C TA = +25°C TA = +70°C TP = 10μs Continuous Drain Current (Note 6) VGS = -4.5V Continuous Drain Current (Note 6) VGS = -2.5V Pulsed Drain Current Value -20 ±8 -200 -150 ID IDM -170 -130 -600 Symbol PD RθJA TJ, TSTG Value 330 377.16 -55 to +150 ID Units V V mA mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Units mW °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -20 -100 -50 V nA nA 100 nA µA Test Condition VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VDS = -5.0V, VGS = 0V VGS = 5.0V, VDS = 0V VGS = 8.0V, VDS = 0V Zero Gate Voltage Drain Current IDSS Gate-Source Leakage IGSS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) |Yfs| VSD -0.45 150 -0.5 20 200 -1.15 5.5 7.5 11.5 17.5 -1.2 mS V Ciss Coss Crss 13.72 4.01 2.34 27.44 8.02 4.68 pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf 7.7 19.3 25.9 31.5 ns VGS = -4.5V, VDD = -15V ID = -180mA, RG = 2.0Ω Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 8) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: 1 V Ω VDS = VGS, ID = -250µA VGS = -4.5V, ID = -100mA VGS = -2.5V, ID = -50mA VGS = -1.8V, ID = -20mA VGS = -1.5V, ID = -10mA VGS = -1.2V, ID = -1mA VDS = -10V, ID = -0.2A VGS = 0V, IS = -115mA 6. Device mounted on 1”x1” FR-4 substrate PC board, with minimum recommended pad layout, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP210DUDJ Document number: DS31494 Rev. 9 - 2 2 of 6 www.diodes.com November 2013 © Diodes Incorporated 0.6 0.6 0.5 0.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) DMP210DUDJ 0.4 0.3 0.2 0.4 0.3 0.2 0.1 0.1 VDS=5.0V 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 4 100 RDS(ON) ( ) Ave @ VGS=1.5V 10 RDS(ON) ( ) Ave @ VGS=1.8V RDS(ON) ( ) Ave @ VGS=2.5V RDS(ON) () Ave @ VGS=4.5V 1 0.001 0.01 0.1 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0 10 1 Ave RDS(ON) (R) @ 150 C 8 7 Ave RDS(ON) (R) @ 125 C 6 5 4 Ave RDS(ON) (R) @ 85C 3 Ave RDS(ON) (R) @ 25C 2 Ave RDS(ON) (R) @ -55 C 1 0 0 0.1 0.2 0.3 0.4 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.5 12 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 1.6 VGS=4.5V 9 RDS(ON)() @VGS=4.5V, ID=200mA 1.4 1.2 RDS(ON)( ) @VGS=2.5V, ID=50mA 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resisitance Variation with Temperature DMP210DUDJ Document number: DS31494 Rev. 9 - 2 3 of 6 www.diodes.com 10 8 RDS(ON)( ) @VGS=2.5V, ID=50mA 6 4 R DS(ON)() @V GS=4.5V, I D=200mA 2 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resisitance vs.Temperature 150 November 2013 © Diodes Incorporated DMP210DUDJ 0.6 VSD (V) @ VGS =0V 1.2 TA=25 C 0.5 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.4 1 V(th) (V) @ I D= 1mA 0.8 0.6 V(th) (V) @ I D= 250A 0.4 0.4 0.3 0.2 0.1 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 100 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10000 IDSS (nA) Ave @ 150 C IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f=1MHz CISS Ave(pF) 10 COSS Ave(pF) C RSS Ave(pF) 1 0 1.2 1000 100 IDSS (nA) Ave @ 85C 10 IDSS (nA) Ave @ 25 C 1 IDSS (nA) Ave @ -55 C 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance DMP210DUDJ Document number: DS31494 Rev. 9 - 2 20 4 of 6 www.diodes.com 0.1 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage November 2013 © Diodes Incorporated DMP210DUDJ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D e1 SOT963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 c 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm L E E1 e b (6 places) c A A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 Y1 Y (6X) X (6X) DMP210DUDJ Document number: DS31494 Rev. 9 - 2 5 of 6 www.diodes.com November 2013 © Diodes Incorporated DMP210DUDJ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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