DMP6023LE Green ADVANCE INFORMATION Product Summary 60V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V(BR)DSS RDS(ON) max -60V 28mΩ @ VGS = -10V 35mΩ @ VGS = -4.5V ID max TA = +25°C -7A -6.2A Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See Diagram Below Power Management Functions DC-DC Converters Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) D SOT223 G S Equivalent Circuit Pin Out - Top View Top View Ordering Information (Note 4) Part Number DMP6023LE-13 Notes: Compliance Standard Case SOT223 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YWW P6023 DMP6023LE Document number: DS37199 Rev. 3 - 2 = Manufacturer’s Marking P6023 = Marking Code YWW = Date Code Marking Y or Y= Year (ex: 4 = 2014) WW = Week (01 - 53) 1 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP6023LE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS Value -60 Units V VGSS ±20 V TA = +25°C TA = +70°C ID -7 -5.6 A TC = +25°C TC = +70°C ID -18.2 -14.5 A IDM -50 A IS -2 A Avalanche Current, L = 0.1mH IAS -35.5 A Avalanche Energy, L = 0.1mH EAS 62.9 mJ Continuous Drain Current (Note 5) VGS = -10V Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units PD 2 1.3 W RJA 60 °C/W PD 17.3 W RJC 7.2 °C/W TJ, TSTG -55 to +150 °C TA = +25°C TA = +70°C Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 5) TC = +25°C Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min BVDSS IDSS IGSS VGS(th) RDS(ON) Typ Max -60 — — V VGS = 0V, ID = -250μA — — -1 µA VDS = -60V, VGS = 0V — — ±100 nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = -250μA -1 — -3 — — 28 — — 35 — -0.7 -1.2 Unit mΩ V Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance VSD Ciss — 2569 — pF Output Capacitance Coss — 179 — pF Reverse Transfer Capacitance Crss — pF Rg — 143 8 — Gate Resistance — Ω Total Gate Charge (VGS = -4.5V) Qg — 26.5 — nC Total Gate Charge (VGS = -10V) Gate-Source Charge Qg — 53.1 — nC Qgs — 7.1 — nC Gate-Drain Charge Qgd — 12.6 — nC Turn-On Delay Time tD(on) — 6 — ns Turn-On Rise Time tr — 7.1 — ns Turn-Off Delay Time tD(off) — 110 — ns tf — 62 — ns Body Diode Reverse Recovery Time trr — 20 — nS Body Diode Reverse Recovery Charge Qrr — 14 — nC Turn-Off Fall Time Notes: Test Condition VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VGS = 0V, IS = -1A VDS = -30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A IF = -5A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMP6023LE Document number: DS37199 Rev. 3 - 2 2 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP6023LE 30.0 30 VGS = -10V VGS = -3.5V VGS = -5.0V 20.0 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = -4.5V VGS = -4.0V 15.0 10.0 VGS = -3.0V VGS = -2.8V 5.0 20 15 10 TA = 150C 5 TA = 125 C TA = 85C T A = 25C T A = -55C 0 1 2 3 4 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.04 0.035 0.03 VGS = -4.5V 0.025 VGS = -10V 0.02 0.015 0.01 0.005 0 0 0.05 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -4.5V 5 ID = -5.0A 0.16 0.14 ID = -4.0A 0.12 0.1 0.08 0.06 0.04 0.02 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 1.8 0.03 TA = 25C 0.02 T A = -55C 0.01 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature Document number: DS37199 Rev. 3 - 2 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2 TA = 85C DMP6023LE 0.5 0.18 30 T A = 125C 0 0 0.2 T A = 150C 0.04 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 25.0 VDS = -5.0V 30 3 of 7 www.diodes.com VGS = -4.5V ID = -5A 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated 3 0.045 2.8 2.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.04 0.035 VGS = -4.5V ID = -5A 0.03 0.025 0.02 0.015 0.01 0.005 -I D = 1mA 2 1.8 -I D = 250µA 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 CT, JUNCTION CAPACITANCE (pF) 10000 25 IS, SOURCE CURRENT (A) 2.2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 30 2.4 0 -50 0 -50 20 15 TA= 150C TA= 125C 10 TA= 85C 5 TA= 25 C TA= -55 C f = 1MHz Ciss 1000 Coss Crss 0 0 100 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 SOA, Safe Operation Area 100 9 R DS(on) Limited 8 7 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP6023LE 6 VDS = -30V ID = -5A 5 4 3 2 1 0 10 1 0.1 DC PW = 10s PW = 1s PW = 100ms TJ(max) = +150°C PW = 10ms TA = +25°C PW = 1ms PW = 100µs V = 10V GS Single Pulse DUT on 1 * MRP Board 0 5 10 15 20 25 30 35 40 45 50 55 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP6023LE Document number: DS37199 Rev. 3 - 2 4 of 7 www.diodes.com 0.01 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 January 2015 © Diodes Incorporated DMP6023LE 1D= r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 Rthja(t)=r(t) * Rthja D = 0. 005 Rthja=101C/W Single Pulse 0.001 0.0001 Duty Cycle, D=t1 / t2 0.001 DMP6023LE Document number: DS37199 Rev. 3 - 2 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 January 2015 © Diodes Incorporated DMP6023LE Package Outline Dimensions D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0° -1 0° e A A1 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 7° 7° ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 1 X 1 Y 2 Y 1 C Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y Document number: DS37199 Rev. 3 - 2 C X DMP6023LE 6 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP6023LE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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