DMP2021UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V(BR)DSS RDS(ON) max -20V 16mΩ @ VGS = -4.5V 22mΩ @ VGS = -2.5V • • • • • • • • ID max TA = +25°C -9.0A -7.7A 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize on-state resistance (RDS(ON)) • • and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • • • • • Battery Management Application Power Management Functions DC-DC Converters • Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.007 grams (Approximate) D U-DFN2020-6 G ESD PROTECTED Pin1 Top View Gate Protection Diode Pin Out Bottom View Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMP2021UFDF-7 DMP2021UFDF-13 Notes: Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 P1 Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMP2021UFDF Document number: DS37195 Rev. 3 - 2 Mar 3 P1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) YM ADVANCE INFORMATION Product Summary 2016 D Apr 4 May 5 2017 E Jun 6 1 of 7 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D April 2015 © Diodes Incorporated DMP2021UFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage ADVANCE INFORMATION Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C t<10s Value -20 ±8 -9.0 -7.2 ID ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM Continuous Source-Drain Diode Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH TA = +25°C IS IAS EAS Units V V A -11.1 -8.9 -60 A -2.4 -27 38 A A mJ Value 0.73 0.47 172 121 2.02 1.30 63 42 18 -55 to +150 Units A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Steady State Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range PD RθJA PD RθJA RθJC TJ, TSTG W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 — — — — — — -1 ±10 V µA µA VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.35 RDS (ON) — VSD — -1.0 16 22 40 80 -1.2 V Static Drain-Source On-Resistance — 12 15 19 21 -0.8 VDS = VGS, ID = -250µA VGS = -4.5V, ID = -7.0A VGS = -2.5V, ID = -5.0A VGS = -1.8V, ID = -3.0A VGS = -1.5V, ID = -1.0A VGS = 0V, IS = -1.0A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 2,760 262 220 16 34 59 3.5 8.3 7.5 25 125 96 48 33 — — — 30 — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = -15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -15V, ID = -4.0A ns VDS = -15V, VGS = -4.5V, RG = 1Ω, ID = -4.0A ns nC IF = -1.0A, di/dt = 100A/µs IF = -1.0A, di/dt = 100A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP2021UFDF Document number: DS37195 Rev. 3 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMP2021UFDF 30.0 20 VGS = -8.0V VDS = -5.0V VGS = -4.5V 18 VGS = -4.0V 25.0 VGS = -1.5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -2.5V 20.0 VGS = -2.0V VGS = -1.8V 15.0 10.0 VGS = -1.2V 14 12 10 8 6 T A = 150 °C 4 5.0 VGS = -0.9V TA = 125°C VGS = -1.0V 2 TA = 85°C T A = 25°C T A = -55°C 0 0.5 1 1.5 2 2.5 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 3 0.04 VGS = -1.5V 0.03 VGS = -1.8V 0.02 VGS = -2.5V VGS = -4.5V 0.01 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 1.6 VGS = -2.5V ID = -10A 1.2 VGS = -1.8V ID = -5A 0.8 0.4 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION VGS = -3.0V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMP2021UFDF Document number: DS37195 Rev. 3 - 2 3 of 7 www.diodes.com 0 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.02 2.5 VGS = -4.5V 0.018 TA = 125°C T A = 150°C 0.016 0.014 TA = 85° C 0.012 TA = 25° C 0.01 0.008 T A = -55°C 0.006 0.004 0.002 0 0 2 4 6 8 10 12 14 16 18 ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.04 0.03 VGS = -1.8V ID = -5A 0.02 VGS = -2.5V ID = -10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature April 2015 © Diodes Incorporated DMP2021UFDF VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 18 IS, SOURCE CURRENT (A) 16 0.6 -ID = 1mA 0.4 -ID = 250µA 0.2 14 12 10 TA= 150°C 8 TA= 125 °C TA= 25°C 6 TA= 85°C TA= -55°C 4 2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 10000 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1000 Coss Crss 100 0 100 ID, DRAIN CURRENT (A) ADVANCE INFORMATION 0.8 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 ypical Junction Capacitance 20 7 6 5 VDS = -15V ID = -4A 4 3 2 1 0 0 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 60 RDS(on) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 T J(max) = 150°C TA = 25°C VGS = -4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMP2021UFDF Document number: DS37195 Rev. 3 - 2 100 4 of 7 www.diodes.com April 2015 © Diodes Incorporated DMP2021UFDF r(t), TRANSIENT THERMA L RESISTA NCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja RthjA = 172°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance DMP2021UFDF Document number: DS37195 Rev. 3 - 2 5 of 7 www.diodes.com April 2015 © Diodes Incorporated DMP2021UFDF Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ADVANCE INFORMATION A A1 A3 Seating Plane D E3 D3 D2 E e2 E2 L Z1 e Z(4X) b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D3 0.33 0.43 0.38 e 0.65 BSC e2 0.863 BSC E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E3 0.65 0.75 0.70 L 0.225 0.325 0.275 Z 0.20 BSC Z1 0.110 BSC All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X3 C Y3 Y X Y2 Y1 Dimensions Y4 X1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 Pin1 X2 DMP2021UFDF Document number: DS37195 Rev. 3 - 2 6 of 7 www.diodes.com April 2015 © Diodes Incorporated DMP2021UFDF IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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