A Product Line of Diodes Incorporated ZXTC2061E6 ADVANCE INFORMATION 12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data • • NPN + PNP Combination BVCEO > 12 (-12)V • Case: SOT26 • Case Material: Molded Plastic, “Green” Molding Compound • BVEBO > 7 (-7)V • UL Flammability Classification Rating 94V-0 • Continuous Collector Current IC = 5 (-3.5)A • Moisture Sensitivity: Level 1 per J-STD-020 • VCE(sat) < 32 (-70)mV @ 1A • • RCE(sat) = 25 (45)mΩ • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 • Weight: 0.015 grams (approximate) Applications Description Advanced process capability has been used to achieve this high • MOSFET and IGBT Gate Driving • Motor Drive performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications. SOT26 C1 B1 C2 B2 Q1 Top View E1 Q2 E2 C1 E1 B1 B2 C2 E2 Device Symbol Top View Pin-Out Ordering Information (Note 4) Product ZXTC2061E6TA Notes: Marking 2061 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/ for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com Marking Information 2061 ZXTC2061E6 Document Number: DS33646 Rev: 2 - 2 2061 = Product Type Marking Code 1 of 9 www.diodes.com February 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2061E6 ADVANCE INFORMATION Maximum Ratings – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulsed Collector Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value 20 12 7 5 12 1 Unit V V V A A A Maximum Ratings – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulsed Collector Current Base Current Symbol VCBO VCEO VEBO IC ICM IB Value -12 -12 -7 -3.5 -10 -1 Unit V V V A A A Value 0.7 5.6 0.9 7.2 1.1 8.8 1.1 8.8 1.7 13.6 179 139 113 113 73 87.58 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol (Notes 5 & 9) (Notes 6 & 9) Power Dissipation Linear Derating Factor (Notes 6 & 10) PD (Notes 7 & 9) (Notes 8 & 9) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 5 & 9) (Notes 6 & 9) (Notes 6 & 10) (Notes 7 & 9) (Notes 8 & 9) (Note 11) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note (5), except the device is surface mounted on 25mm x 25mm 1oz copper. 7. Same as note (5), except the device is surface mounted on 50mm x 50mm 2oz copper. 8. Same as note (7), except the device is measured at t < 5 seconds. 9. For device with one active die, both collectors attached to a common heatsink. 10. For device with two active dice running at equal power, split heatsink 50% to each collector. 11. Thermal resistance from junction to solder-point (at the end of the collector lead). ZXTC2061E6 Document Number: DS33646 Rev: 2 - 2 2 of 9 www.diodes.com February 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2061E6 10 Limit 1 DC 1s 100ms 100m 10m -IC Collector Current (A) IC Collector Current (A) RDS(on) NPN Tamb=25°C RDS(on) 10 Limit 1 DC 1s 100m 10ms 1ms 50mm x 50mm 2oz FR4 One active die 100m 100µs 1 10 10m 0.1 VCE Collector-Emitter Voltage (V) 10ms 1ms 100µs 1 10 -VCE Collector-Emitter Voltage (V) Safe Operating Area 2.0 Tamb=25°C 50mm x 50mm 2oz FR4 One activ die D=0.1 D=0.05 Single Pulse 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) 110 100 90 80 70 D=0.5 60 50 40 D=0.2 30 20 10 0 100µ 1m 100ms PNP Tamb=25°C 50mm x 50mm 2oz FR4 One active die Safe Operating Area 50mm x 50mm 2oz FR4 One activ die, t < 5 sec 25mm x 25mm 1oz FR4 1.5 two activ die 50mm x 50mm 2oz FR4 One activ die 1.0 25mm x 25mm 1oz FR4 One activ die 0.5 15mm x 15mm 1oz FR4 0.0 Transient Thermal Impedance Max Power Dissipation (W) ADVANCE INFORMATION Thermal Characteristics and Derating Information One activ die 0 20 40 60 80 100 120 140 160 Temperature (°C) Derating Curve Single Pulse Tamb=25°C 100 50mm x 50mm 2oz FR4 One active die 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation ZXTC2061E6 Document Number: DS33646 Rev: 2 - 2 3 of 9 www.diodes.com February 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2061E6 ADVANCE INFORMATION Electrical Characteristics – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 20 12 7 Collector Cutoff Current ICBO — 40 17 8.4 <1 Collector Cutoff Current ON CHARACTERISTICS (Note 12) IEBO — <1 — — — 50 0.5 50 V V V nA µA nA hFE 500 480 260 800 750 390 1500 DC Current Gain 40 60 80 180 mV — Collector-Emitter Saturation Voltage VCE(sat) — 32 50 65 145 Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Delay Time Rise Time Storage Time Fall Time VBE(sat) VBE(on) — — 920 810 1000 900 mV mV Cobo fT td tr ts tf — — — — — — 26 260 71 70 233 72 35 — — — — — pF MHz ns ns ns ns Notes: Test Condition IC = 100µA, IE = 0 IC = 10mA, IB = 0 IE = 100µA, IC = 0 VCB = 20V VCB = 20V, TA = +100°C VEB = 5.6V IC = 10mA, VCE = 2V IC = 1.0A, VCE = 2V IC = 5A, VCE = 2V IC = 1.0A, IB = 100mA IC = 1.0A, IB = 10mA IC = 2.0A, IB = 40mA IC = 5A, IB = 100mA IC = 5A, IB = 100mA IC = 5A, VCE = 2V VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz VCC = 10V, IC = 1A, IB1 = -IB2 = 10mA 12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. ZXTC2061E6 Document Number: DS33646 Rev: 2 - 2 4 of 9 www.diodes.com February 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2061E6 ADVANCE INFORMATION Electrical Characteristics – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 12) Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO -12 -12 -7 — — — -35 -25 -8.4 < -1 < -1 — — — -50 -0.5 -50 V V V nA µA nA Collector Cutoff Current ICBO Collector Cutoff Current ON CHARACTERISTICS (Note 12) IEBO DC Current Gain hFE 500 290 75 800 450 100 1500 — — — Collector-Emitter Saturation Voltage VCE(sat) — — — — -55 -170 -220 -150 -70 -265 -360 -200 mV Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Delay Time Rise Time Storage Time Fall Time VBE(sat) VBE(on) — — -955 -830 -1050 -900 mV mV Cobo fT td tr ts tf — — — — — — 17 310 41 62 179 65 25 — — — — — pF MHz ns ns ns ns Notes: Test Condition IC = -100µA, IE = 0 IC = -10mA, IB = 0 IE = -100µA, IC = 0 VCB = -12V VCB = -12V, TA = +100°C VEB = -5.6V IC = -10mA, VCE = -2V IC = -1.0A, VCE = -2V IC = -3.5A, VCE = -2V IC = -1.0A, IB = -100mA IC = -1.0A, IB = -10mA IC = -2.0A, IB = -40mA IC = -3.5A, IB = -350mA IC = -3.5A, IB = -350mA IC = -3.5A, VCE = -2V VCB = -10V, f = 1.0MHz VCE = -10V, IC = -50mA, f = 100MHz VCC = -10V, IC = -1A, IB1 = -IB2 = -10mA 12. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. ZXTC2061E6 Document Number: DS33646 Rev: 2 - 2 5 of 9 www.diodes.com February 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2061E6 0.4 1 Tamb=25°C 0.3 VCE(SAT) (V) VCE(SAT) (V) IC/IB=10 IC/IB=100 100m IC/IB=50 10m IC/IB=10 1m 1m 10m 100m 1 IC Collector Current (A) 150°C 0.2 100°C 0.1 25°C -55°C 0.0 1m 10 10m 1000 800 600 400 200 100m 1 10 1.0 VBE(SAT) (V) 1200 Typical Gain (hFE) Normalised Gain 1600 1400 IC Collector Current (A) 1 10 VCE(SAT) v IC 1.2 VCE=2V 1.8 150°C 1.6 1.4 100°C 1.2 1.0 25°C 0.8 0.6 0.4 -55°C 0.2 0.0 1m 10m 100m IC Collector Current (A) VCE(SAT) v IC IC/IB=10 25°C -55°C 0.8 150°C 0.6 100°C 0.4 0 1m hFE v IC 10m 100m 1 IC Collector Current (A) 10 VBE(SAT) v IC 1.0 VCE=2V -55°C 25°C 0.8 VBE(ON) (V) ADVANCE INFORMATION Typical Electrical Characteristics – Q1 (NPN Transistor) (@TA = +25°C, unless otherwise specified.) 0.6 150°C 0.4 100°C 0.2 1m 10m 100m 1 IC Collector Current (A) 10 VBE(ON) v IC ZXTC2061E6 Document Number: DS33646 Rev: 2 - 2 6 of 9 www.diodes.com February 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2061E6 1 0.5 Tamb=25°C - VCE(SAT) (V) - VCE(SAT) (V) IC/IB=10 0.4 IC/IB=100 100m IC/IB=50 10m IC/IB=20 IC/IB=10 1m 1m 10m 100m 1 100°C 0.1 1400 1200 1000 800 600 400 200 100m 1 - IC Collector Current (A) 10 1.2 1600 1.0 - VBE(SAT) (V) VCE=2V 25°C -55°C 10m 100m 1 10 - IC Collector Current (A) VCE(SAT) v IC Typical Gain (hFE) Normalised Gain 150°C 1.8 1.6 1.4 100°C 1.2 1.0 25°C 0.8 0.6 0.4 -55°C 0.2 0.0 1m 10m 150°C 0.2 0.0 1m 10 - IC Collector Current (A) 0.3 VCE(SAT) v IC IC/IB=10 25°C -55°C 0.8 150°C 0.6 100°C 0.4 0 1m hFE v IC 10m 100m 1 - IC Collector Current (A) 10 VBE(SAT) v IC 1.2 VCE=2V 1.0 25°C -55°C - VBE(ON) (V) ADVANCE INFORMATION Typical Electrical Characteristics – Q2 (PNP Transistor) (@TA = +25°C, unless otherwise specified.) 0.8 0.6 150°C 100°C 0.4 0.2 1m 10m 100m 1 - IC Collector Current (A) 10 VBE(ON) v IC ZXTC2061E6 Document Number: DS33646 Rev: 2 - 2 7 of 9 www.diodes.com February 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2061E6 Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm B C H K M J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X ZXTC2061E6 Document Number: DS33646 Rev: 2 - 2 8 of 9 www.diodes.com February 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2061E6 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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