DMN3015LSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits V(BR)DSS RDS(on) max 30V 15mΩ @ VGS = 10V 18mΩ @ VGS = 4.5V ID TA = +25°C 8.4A 7.7A • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description • Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching Mechanical Data performance, making it ideal for high efficiency power management • applications. • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications • DC-DC Converters • Power Management Functions • Backlighting • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.074 grams (approximate) S1 D1 G1 D1 S2 D2 G2 D2 D1 D2 Pin1 S2 S1 Top View Pin Configuration Top View G2 G1 Equivalent Circuit Ordering Information (Note 4) Part Number DMN3015LSD-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 N3015LD C6040SD N3015LD C6040SD YY WW 1 5 YY WW 4 Chengdu A/T Site DMN3015LSD Document number: DS36300 Rev. 2 - 2 1 4 = Manufacturer’s Marking N3015LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) Shanghai A/T Site 1 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN3015LSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Value 30 ±20 8.4 6.8 ID A 11.0 9.0 2.5 80 22 25 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (Notes 7) L = 0.1mH Avalanche Energy (Notes 7) L = 0.1mH Units V V IS IDM IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJC TJ, TSTG Value 1.2 0.8 102 62 1.6 1.0 78 47 14.5 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD ⎯ 8 12 0.7 2.5 15 18 1.0 V Static Drain-Source On-Resistance 1.3 ⎯ ⎯ ⎯ VDS = VGS, ID = 250µA VGS = 10V, ID = 12A VGS = 4.5V, ID = 10A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1415 119 82 2.6 11.3 25.1 3.5 3.6 4.8 16.5 26.1 5.6 8.5 7.0 ⎯ ⎯ ⎯ 3.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 12A nS VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω, nS nC IS = 12A, dI/dt = 500A/μs IS = 12A, dI/dt = 500A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 0.1mH, starting TA = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3015LSD Document number: DS36300 Rev. 2 - 2 2 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN3015LSD 30 30 VGS = 10V VDS = 5.0V VGS = 4.5V 25 VGS = 4.0V 25 VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 15 10 VGS = 2.5V 5 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0.01 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN3015LSD Document number: DS36300 Rev. 2 - 2 TA = 150°C 10 TA = 85°C TA = 125°C 0 2 0.02 0 15 T A = 25°C TA = -55°C VGS = 2.2V 0.5 1 1.5 VDS, DRAIN -SOURCE VOLTAGE(V) Figure 1 Typical Output Characteristics 20 5 0.03 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION NEW PRODUCT VGS = 3.5V 3 of 6 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.03 VGS = 4.5V 0.025 T A = 150 °C 0.02 TA = 125 °C 0.015 TA = 85°C T A = 25°C 0.01 TA = -55°C 0.005 0 0 5 10 15 20 25 ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.024 0.020 VGS = 4.5V ID = 5A 0.016 VGS = 10V ID = 10A 0.012 0.008 0.004 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature July 2014 © Diodes Incorporated 30 2.5 25 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 3.0 2.0 1.5 1.0 20 15 10 5 0.5 0 0 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature -25 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) Ciss 1000 Coss 100 Crss 10 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 10000 0 100 ID, DRAIN CURRENT (A) ADVANCE INFORMATION NEW PRODUCT DMN3015LSD 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 20 9 8 7 6 VDS = 15V ID = 12A 5 4 3 2 1 0 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 25 RDS(on) Limited 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMN3015LSD Document number: DS36300 Rev. 2 - 2 100 4 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN3015LSD 1 D = 0.9 D = 0.7 ADVANCE INFORMATION NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 102°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions 0.254 Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMN3015LSD Document number: DS36300 Rev. 2 - 2 5 of 6 www.diodes.com July 2014 © Diodes Incorporated DMN3015LSD ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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