DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V(BR)DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V ITO220-3 4.0 A • • • • • • Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications. Mechanical Data • • Case: ITO220-AB Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish-Matte Tin annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 0.008 grams (approximate) • • Applications • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Motor control Backlighting DC-DC Converters Power management functions • • D ITO-220AB G S Top View Bottom View Equivalent Circuit Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMG4N65CTI Notes: Case ITO220-AB Packaging 50 pieces/tube 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information 4N65CTI YYWW DMG4N65CTI Document number: DS36122 Rev. 1 - 2 4N65CTI = Product Type Marking Code YYWW = Date Code Marking YY = Last two digits of year (ex: 12 = 2012) WW = Week (01 - 53) 1 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4N65CTI ADVANCE INFORMATIO Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note TC = +25°C Steady State 5,6) VGS = 10V TC = +70°C Pulsed Drain Current (Note 7) Avalanche Current (Note 8 ) VDD = 100V, VGS = 10V, L = 60mH Repetitive avalanche energy (Note 7) Symbol VDSS VGSS Unit V V IDM IAS EAS Value 650 ±30 4.0 3.0 6 3.9 456 Symbol PD RθJA RθJC TJ, TSTG Max 8.35 12.36 10.69 -55 to +150 Unit W °C/W °C/W °C ID A A A mJ Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Thermal Resistance, Junction to Case @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics @ TA = 25°C unless otherwise stated Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 650 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 650V, VGS = 0V VGS = ±30V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 3 - 2.1 3.7 0.7 5 3.0 1.0 V Ω S V VDS = VGS, ID = 250μA VGS = 10V, ID = 2A VDS = 40V, ID = 2A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr - 900 50 1.1 2.4 13.5 2.7 3.8 15.1 13.8 40 16 515 2330 - pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 10V, VDS = 520V, ID = 4A ns ns ns ns ns nC Test Condition VGS = 10V, VDS = 325V, RG = 25Ω, ID = 4A dI/dt = 100A/μs, VDS = 100V, IF = 4A 5. Device mounted on an infinite heatsink 6. Drain current limited by maximum junction temperature. 7. Repetitive rating, pulse width limited by junction temperature. 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. DMG4N65CTI Document number: DS36122 Rev. 1 - 2 2 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4N65CTI 4.0 10 VDS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 3.0 2.5 2.0 1.5 1.0 1 0.1 T A = 150°C TA = 125°C 0.01 TA = 85°C TA = 25°C 0.5 T A = -55°C 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 20 4 3 VGS = 10V VGS = 20V 2 1 0 0 0.001 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 15V ID = 4A 2.0 1.5 VGS = 10V ID = 2A 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMG4N65CTI Document number: DS36122 Rev. 1 - 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.5 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 6 VGS= 10V TA = 150°C TA = 125°C TA = 85°C T A = 25°C TA = -55°C 0 1 2 3 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 4 3.0 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATIO 3.5 VGS = 15V ID = 4A VGS = 15 V ID = 4A 2.5 2.0 VGS = 10V ID = 2A VGS = 10V ID = 2A 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4N65CTI 5.5 5.0 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 4 4.5 ID = 1mA 4.0 ID = 250µA 3.5 3.0 3 2 TA = 25°C 1 2.5 2.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10,000 IDSS, DRAIN LEAKAGE CURRENT (nA) ADVANCE INFORMATIO 6.0 TA = 150°C 1,000 T A = 125°C TA = 85°C 100 TA = 25°C TA = -55°C 10 1 0 100 200 300 400 500 600 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage DMG4N65CTI Document number: DS36122 Rev. 1 - 2 4 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4N65CTI Package Outline Dimensions A A1 3 5 ° ° 0 5 P Ø E ° 5 B 5 ° Q B D 5° D1 L1 ° 5 5° b1 3x A2 L b 3x e e ° 3 c ° 5 ° 5 P Ø ° 5 ADVANCE INFORMATIO Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ITO-220AB Dim Min Typ Max A 4.50 4.70 4.90 A1 3.04 3.24 3.44 A2 2.56 2.76 2.96 b 0.50 0.60 0.75 b1 1.10 1.20 1.35 c 0.50 0.60 0.70 D 15.67 15.87 16.07 D1 8.99 9.19 9.39 e 2.54 E 9.91 10.11 10.31 L 9.45 9.75 10.05 L1 15.80 16.00 16.20 P 2.98 3.18 3.38 Q 3.10 3.30 3.50 All Dimensions in mm ° 5 SECTION B-B DMG4N65CTI Document number: DS36122 Rev. 1 - 2 5 of 6 www.diodes.com November 2012 © Diodes Incorporated DMG4N65CTI IMPORTANT NOTICE ADVANCE INFORMATIO DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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