DMG4N65CTI ADVAN CE IN F O RM ATIO Product Summary

DMG4N65CTI
N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATIO
Product Summary
Features
V(BR)DSS
RDS(ON)
Package
ID
TC = 25°C
650V
[email protected] = 10V
ITO220-3
4.0 A
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Description
This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power
management applications.
Mechanical Data
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Case: ITO220-AB
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish-Matte Tin annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
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Applications
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Low Input Capacitance
High BVDss rating for power application
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Motor control
Backlighting
DC-DC Converters
Power management functions
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•
D
ITO-220AB
G
S
Top View
Bottom View
Equivalent Circuit
Top View
Pin Out Configuration
Ordering Information (Note 4)
Part Number
DMG4N65CTI
Notes:
Case
ITO220-AB
Packaging
50 pieces/tube
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
4N65CTI
YYWW
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
4N65CTI = Product Type Marking Code
YYWW = Date Code Marking
YY = Last two digits of year (ex: 12 = 2012)
WW = Week (01 - 53)
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DMG4N65CTI
ADVANCE INFORMATIO
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note
TC = +25°C
Steady
State
5,6) VGS = 10V
TC = +70°C
Pulsed Drain Current (Note 7)
Avalanche Current (Note 8 ) VDD = 100V, VGS = 10V, L = 60mH
Repetitive avalanche energy (Note 7)
Symbol
VDSS
VGSS
Unit
V
V
IDM
IAS
EAS
Value
650
±30
4.0
3.0
6
3.9
456
Symbol
PD
RθJA
RθJC
TJ, TSTG
Max
8.35
12.36
10.69
-55 to +150
Unit
W
°C/W
°C/W
°C
ID
A
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Thermal Resistance, Junction to Case @TA = +25°C (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
650
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 650V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
3
-
2.1
3.7
0.7
5
3.0
1.0
V
Ω
S
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 2A
VDS = 40V, ID = 2A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
-
900
50
1.1
2.4
13.5
2.7
3.8
15.1
13.8
40
16
515
2330
-
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VGS = 10V, VDS = 520V,
ID = 4A
ns
ns
ns
ns
ns
nC
Test Condition
VGS = 10V, VDS = 325V,
RG = 25Ω, ID = 4A
dI/dt = 100A/μs, VDS = 100V,
IF = 4A
5. Device mounted on an infinite heatsink
6. Drain current limited by maximum junction temperature.
7. Repetitive rating, pulse width limited by junction temperature.
8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
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DMG4N65CTI
4.0
10
VDS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
3.0
2.5
2.0
1.5
1.0
1
0.1
T A = 150°C
TA = 125°C
0.01
TA = 85°C
TA = 25°C
0.5
T A = -55°C
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
20
4
3
VGS = 10V
VGS = 20V
2
1
0
0
0.001
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS = 15V
ID = 4A
2.0
1.5
VGS = 10V
ID = 2A
1.0
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2.5
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
6
VGS= 10V
TA = 150°C
TA = 125°C
TA = 85°C
T A = 25°C
TA = -55°C
0
1
2
3
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
3.0
3.0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
ADVANCE INFORMATIO
3.5
VGS = 15V
ID = 4A
VGS = 15 V
ID = 4A
2.5
2.0
VGS = 10V
ID = 2A
VGS = 10V
ID = 2A
1.5
1.0
0.5
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
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DMG4N65CTI
5.5
5.0
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
4
4.5
ID = 1mA
4.0
ID = 250µA
3.5
3.0
3
2
TA = 25°C
1
2.5
2.0
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10,000
IDSS, DRAIN LEAKAGE CURRENT (nA)
ADVANCE INFORMATIO
6.0
TA = 150°C
1,000
T A = 125°C
TA = 85°C
100
TA = 25°C
TA = -55°C
10
1
0
100
200
300
400
500
600
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
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DMG4N65CTI
Package Outline Dimensions
A
A1
3
5
°
°
0
5
P
Ø
E
°
5
B
5
°
Q
B
D
5°
D1 L1
°
5
5°
b1 3x
A2
L
b 3x
e
e
°
3
c
°
5
°
5
P
Ø
°
5
ADVANCE INFORMATIO
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ITO-220AB
Dim Min Typ Max
A
4.50 4.70 4.90
A1 3.04 3.24 3.44
A2 2.56 2.76 2.96
b
0.50 0.60 0.75
b1 1.10 1.20 1.35
c
0.50 0.60 0.70
D 15.67 15.87 16.07
D1 8.99 9.19 9.39
e
2.54
E
9.91 10.11 10.31
L
9.45 9.75 10.05
L1 15.80 16.00 16.20
P
2.98 3.18 3.38
Q
3.10 3.30 3.50
All Dimensions in mm
°
5
SECTION B-B
DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
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DMG4N65CTI
IMPORTANT NOTICE
ADVANCE INFORMATIO
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
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DMG4N65CTI
Document number: DS36122 Rev. 1 - 2
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