DMN3042L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits RDS(ON) max ID max 26.5mΩ @ VGS = 10V 5.8A 32mΩ @ VGS = 4.5V 5.0A 30V • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it • Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 ideal for high-efficiency power management applications. • Battery Charging • Power Management Functions • DC-DC Converters • Terminals Connections: See Diagram Below • Portable Power Adaptors • Weight: 0.008 grams (Approximate) SOT23 D D G S G S Top View Top View Internal Schematic Ordering Information (Note 4) Part Number DMN3042L-7 DMN3042L-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information SOT23 Date Code Key Year Code Month Code 2009 W Jan 1 4L = Product Type Marking Code YM = Date Code Marking Y or Y̅ = Year (ex: B = 2014) M = Month (ex: 9 = September) YM 4L 2010 X Feb 2 DMN3042L Document number: DS37539 Rev. 2- 2 Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 6 www.diodes.com 2013 A Jul 7 Aug 8 2014 B Sep 9 Oct O 2015 C Nov N Dec D January 2015 © Diodes Incorporated DMN3042L Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C Steady State Value 30 ±12 5.8 4.0 1.5 30 ID Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) IS IDM Units V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Steady State Steady State Value 0.72 171 1.4 93 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) VSD 21 23 29 0.7 1.4 26.5 32 48 1.2 V Static Drain-Source On-Resistance 0.6 VDS = VGS, ID = 250µA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 5.0A VGS = 2.5V, ID = 4.0A VGS = 0V, IS = 1A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 570 63 53 3.2 13.3 6.1 1.0 1.6 1.5 3.3 13.9 4.9 7.8 1.9 860 95 80 4.5 20 8 1.5 2.5 2.4 5 22 7 12 3 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 6.9A nS VGS = 10V, VDD = 15V, RG = 3Ω, ID = 6.9A nS nC IS = 5A, dI/dt = 100A/µs IS = 5A, dI/dt = 100A/µs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN3042L Document number: DS37539 Rev. 2- 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN3042L 30 20 VGS = 2.5V 18 VGS = 3.0V 20 VGS = 4.5V VGS = 2.0V VGS = 10.0V 15 VDS = 5.0V 16 VGS = 4.0V 10 ID , DRAIN CURRENT (A) I D, DRAIN CURRENT (A) 25 14 12 10 TA = 150°C 8 T A = 125°C 6 T A = 85°C 4 5 TA = 25°C 2 VGS = 1.5V VGS = 4.5V 0.024 VGS = 10V 0.02 0 0.04 5 10 15 20 25 ID , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 0.5 1 1.5 2 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics I D = 5.8A 0.16 0.12 0.08 0.04 I D = 5.0A 0 0 2 4 6 8 10 V GS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic VGS = 4.5V T A = 150°C I D = 5.0A 0.035 T A = 125°C 0.03 T A = 85°C 0.025 T A = 25°C 0.015 T A = -55°C 0.01 0 2 4 6 8 10 12 14 16 18 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN3042L Document number: DS37539 Rev. 2- 2 12 1.8 VGS = 10V 0.02 2.5 0.2 R DS(ON), DRAI N-SO URCE ON-RESIS TANCE (NORMALI ZE D) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 0.026 0.022 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.028 0.018 TA = -55°C 0 0 0 20 3 of 6 www.diodes.com 1.6 VGS = 10V ID = 5.8A 1.4 VGS = 2.5V I D = 4.0A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated 0.05 1.2 VGS(th ), GATE THRESHOLD VOLTAGE (V) R DS(O N), DRA IN-S OURCE ON-RES ISTANCE ( Ω ) DMN3042L VGS = 2.5V 0.04 ID = 10A 0.03 VGS = 10V I D = 5.8A VGS = 4.5V 0.02 I D = 5.0A 1 I D = 1mA 0.9 0.8 I D = 250µA 0.7 0.6 0.5 0.4 0.3 -50 0.01 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 20 T A = 150°C 0 25 50 75 100 125 150 f = 1MHz 16 TA = 125°C 12 TA = 85°C 8 4 -25 TJ, JUNCTION TEMPERATURE ( °C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 C T , JUNCTI ON CAPACITA NCE (pF) I S, SOURCE CURRENT (A) 1.1 TA = 25°C 1000 C iss 100 Coss C rss T A = -55°C 0 0 10 0 0.3 0.6 0.9 1.2 1.5 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 100 10 8 VDS = 15V ID = 6.9A I D, DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) RDS(on) Limited 6 4 2 10 DC 1 PW = 10s PW = 1s 0.1 PW = 100ms T J (max) = 1 5 0 °C PW = 10ms T A = 2 5 °C VGS = 1 0 V Sin g le Pu lse 0 0 2 4 6 8 10 12 Qg , TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN3042L Document number: DS37539 Rev. 2- 2 14 PW = 1ms PW = 100µs 0.01 DUT on 1 * MRP Board 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 4 of 6 www.diodes.com 100 January 2015 © Diodes Incorporated DMN3042L r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja Rthja = 168°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN3042L Document number: DS37539 Rev. 2- 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMN3042L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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