A Product Line of Diodes Incorporated ZXTN07045EFF 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F Features and Benefits Mechanical Data • • • • • • • • • • • • • BVCEO > 45V IC = 4A Continuous Collector Current Low Saturation Voltage VCE(sat) < 80mV @ 1A RCE(sat) = 50mΩ hFE characterised up to 4A High hFE min 400 @ 1A 1.5W power dissipation Complementary part number ZXTP07040DFF Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • Case: SOT23F Case material: Molded Plastic. “Green” Molding Compound (Note 2) UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Applications • Boost converters Description • MOSFET and IGBT gate drivers This low voltage NPN transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance. • Lamp and relay driver • Motor drive • Siren driver C E SOT23F B C B E Top View Device symbol Top View Pin Configuration Ordering Information (Note 3) Product ZXTN07045EFFTA Notes: Marking 1D4 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 1D4 ZXTN07045EFF Document number: DS33674 Rev. 4 - 2 1D4 = Product Type Marking Code 1 of 7 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN07045EFF Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Collector Voltage (Reverse Blocking) Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Base Current (Note 6) Symbol VCBO VCEO VECO VEBO IC ICM IB Value 45 45 6 7 4 6 1 Unit V V V V A A A Value 0.84 6.72 1.34 10.72 1.50 12.0 2.0 16.0 149 93 83 60 43.77 -55 to +150 Unit Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol (Note 4) Power Dissipation Linear Derating Factor (Note 5) (Note 6) PD - (Note 7) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Note 4) (Note 5) (Note 6) (Note 7) (Note 8) RθJA RθJL TJ, TSTG W mW/°C °C/W °C/W °C 4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. As note 6 above, measured at t < 5 seconds 8. Thermal resistance from junction to solder-point (at the end of the collector lead). ZXTN07045EFF Document number: DS33674 Rev. 4 - 2 2 of 7 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN07045EFF Typical Thermal Characteristics Max Power Dissipation (W) IC Collector Current (A) 1.6 50mmX50mm FR4, 2oz Cu 10 VCE(sat) Limited 1 DC 1s 100m 100ms 10ms Single Pulse T amb=25°C 10m 100m 1ms 1 100µs 10 VCE Collector-Emitter Voltage (V) 1.4 50mmX50mm FR4, 2oz Cu) 1.2 1.0 25mmX25mm FR4, 2oz Cu) 0.8 0.6 0.4 0.2 0.0 0 15mmX15mm FR4, 1oz Cu) 20 80 60 T amb=25°C 50mmX50mm FR4, 2oz Cu D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 120 140 160 100 1k Single Pulse T amb=25°C 50mmX50mm FR4, 2oz Cu 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXTN07045EFF 80 100 Pulse Width (s) Document number: DS33674 Rev. 4 - 2 60 Temperature (°C) Derating Curve Maximum Power (W) Thermal Resistance (°C/W) Safe Operating Area 40 Pulse Power Dissipation 3 of 7 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN07045EFF Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (base open) (Note 9) Emitter-Base Breakdown Voltage Emitter-collector breakdown voltage (reverse blocking) Emitter-collector breakdown voltage (base open) Symbol Min Typ Max Unit BVCBO 45 160 - V IC = 100µA BVCEO 45 60 - V IC = 10mA BVEBO 7 8.3 - V BVECX 6 8.2 - V IE = 100µA IE = 100µA; RBC < 1kΩ or -0.25V < VBC < 0.25V BVECO 6 7.2 - V IE = 100µA Collector-base Cut-off Current ICBO - Emitter-base Cut-off Current ON CHARACTERISTICS (Note 9) IEBO - <1 <1 50 20 50 nA µA nA VCB = 35V VCB = 35V, TA = 100°C VEB = 5.6V hFE 500 400 250 70 800 710 530 125 1500 - - 70 230 80 270 280 mV Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage VCE(sat) - 45 160 60 200 230 Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS (Note 9) VBE(sat) VBE(on) - 1000 875 1100 1000 mV mV Transition Frequency fT 150 190 - MHz Input Capacitance Output Capacitance Delay time Rise time Storage time Fall time Cibo Cobo td tr ts tf - 225 18.4 22.3 10.6 613 146 25 - pF pF ns ns ns ns Notes: Test Condition IC = 100mA, VCE = 2V IC = 1A, VCE = 2V IC = 2A, VCE = 2V IC = 4A, VCE = 2V IC = 0.1A, IB = 0.5mA IC = 1A, IB = 5mA IC = 1A, IB = 100mA IC = 2A, IB = 20mA IC = 4A, IB = 80mA IC = 4A, IB = 80mA IC = 4A, VCE = 2V IC = 50mA, VCE = 5V, f = 50MHz VEB = 0.5V, f = 1MHz VCB = 10V, f = 1MHz VCC = 10V, IC = 500mA, IB1 = IB2 = 50mA 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% ZXTN07045EFF Document number: DS33674 Rev. 4 - 2 4 of 7 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN07045EFF Typical Electrical Characteristics 1 3.0 Tamb=25°C IC/IB=200 100m VCE(SAT) (V) VCE(SAT) (V) IC/IB=100 IC/IB=50 10m 10m 100m 2.0 150°C 1.5 100°C 1.0 25°C 0.5 IC/IB=10 1m 1m IC/IB=100 2.5 1 IC Collector Current (A) 0.0 10m 10 25°C 0.6 0.4 -55°C 0.2 10m 100m 1 IC Collector Current (A) 10 IC/IB=100 -55°C 25°C 0.6 150°C 0.4 100°C 0.2 1m hFE v IC 1.0 VCE=2V 10 0.8 VBE(SAT) (V) 1.0 100°C 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 Typical Gain (hFE) Normalised Gain 1.2 0.0 1m IC Collector Current (A) 1.0 VCE=2V 1300 150°C 1.4 0.8 1 VCE(SAT) v IC VCE(SAT) v IC 1.6 -55°C 100m 10m 100m 1 IC Collector Current (A) VBE(SAT) v IC 25°C -55°C VBE(ON) (V) 0.8 0.6 0.4 100°C 150°C 0.2 1m 10m 100m 1 IC Collector Current (A) VBE(ON) v IC ZXTN07045EFF Document number: DS33674 Rev. 4 - 2 5 of 7 www.diodes.com February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN07045EFF Package Outline Dimensions E e e1 b 3 leads L1 D E1 A L A1 Dim. Millimeters Inches c Dim. Millimeters Min. Max. Min. Max. A - 1.12 - 0.044 e1 A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104 b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055 c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236 D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024 - - - - - e 0.95 NOM Min. 0.037 NOM Max. Inches 1.90 NOM Min. Max. 0.075 NOM Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Suggested Pad Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 ZXTN07045EFF Document number: DS33674 Rev. 4 - 2 6 of 7 www.diodes.com mm inches February 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTN07045EFF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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