DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) Max ID Max TA = +25°C 25mΩ @ VGS = 10V 5.8A 35mΩ @ VGS = 4.5V 4.8A V(BR)DSS This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description and Applications Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D SOT23 D G S G S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMG3404L-7 Case SOT23 Packaging 3000/Tape & Reel DMG3404L-13 SOT23 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N34 Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMG3404L Document number: DS37640 Rev. 1 - 2 N34 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) YM NEW PRODUCT 30V Mar 3 2014 B Apr 4 2015 C May 5 Jun 6 1 of 6 www.diodes.com 2016 D Jul 7 2017 E Aug 8 Sep 9 2018 F Oct O 2019 G Nov N Dec D January 2015 © Diodes Incorporated DMG3404L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Steady State Pulsed Drain Current (Pulse Width ≤10µS, Duty Cycle ≤1%) NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 30 ±20 4.2 3.5 ID Unit V V A IDM 5.8 4.9 30 Symbol PD RθJA PD RθJA TJ, TSTG Value 0.78 164 1.33 96 -55 to +150 ID A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) 1.5 21 24 0.75 2.0 25 35 1.0 V Static Drain-Source On-Resistance 1.0 mΩ VDS = VGS, ID = 250μA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.8A VGS = 0V, IS = 1A 641 66 51 2.2 13.2 1.7 2.2 3.3 4.4 22 5.2 pF pF pF Ω nC nC nC ns ns ns ns Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF V Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 10V, VDS = 15V, ID = 5.8A VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG3404L Document number: DS37640 Rev. 1 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMG3404L 30 30.0 VGS=10V VGS=3.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=3.0V 20.0 VGS=5.0V 15.0 VGS=4.5V 10.0 VGS=4.0V VGS=2.5V 5.0 20 15 TJ=150℃ 10 TJ=125℃ 5 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 0 2 Figure 1. Typical Output Characteristic TJ=-55℃ 0.05 0.045 0.04 0.035 0.03 0.025 VGS=4.5V 0.02 0.015 VGS=10V 0.01 0.005 0 0 5 10 15 20 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) 25 0.05 VGS= 4.5V 0.045 TJ=125℃ 0.04 0.03 0.025 TJ=85℃ 0.02 TJ=25℃ 0.015 0.01 TJ=-55℃ 0.005 0 30 0 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 5 10 15 20 25 ID, DRAIN CURRENT (A) VGS=4.5V, ID=5.0A 1.2 VGS=10V, ID=10A 1 0.8 0.6 0 25 50 75 100 125 150 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 -25 Document number: DS37640 Rev. 1 - 2 0.04 0.035 0.03 VGS=4.5V, ID=5.0A 0.025 0.02 0.015 VGS=10V, ID=10A 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Temperature DMG3404L 30 Figure 4. Typical On-Resistance vs. Drain Current and Temperature 1.8 -50 TJ=150℃ 0.035 ID, DRAIN-SOURCE CURRENT (A) 1.4 4 Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TJ=25℃ TJ=85℃ 0 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VDS= 5.0V 25 25.0 3 of 6 www.diodes.com Figure 6. On-Resistance Variation with Temperature January 2015 © Diodes Incorporated NEW PRODUCT 30 3 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) DMG3404L 2.5 2 ID=1mA 1.5 1 ID=250μA 25 20 15 VGS=0V, TA=25℃ 10 5 0.5 0 0 -50 -25 0 25 50 75 100 125 0 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. Gate Threshold Variation vs. Junction Temperature 1.2 Figure 8. Diode Forward Voltage vs. Current 10000 10 f=1MHz VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Ciss 1000 Coss 100 Crss VDS=15V, ID=10A 8 6 4 2 0 10 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Figure 10. Gate Charge VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance 100 PW =1ms ID, DRAIN CURRENT (A) RDS(ON) Limited PW =100μs PW =100 ms 10 1 PW =10ms TJ(Max)=150℃ TA=25℃ Single Pulse DUT on 1*MRP Board VGS=10V 0.1 0.01 0.1 PW =1s PW =10s 1 DC 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. SOA, Safe Operation Area DMG3404L Document number: DS37640 Rev. 1 - 2 4 of 6 www.diodes.com January 2015 © Diodes Incorporated DMG3404L NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=168℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm G DMG3404L Document number: DS37640 Rev. 1 - 2 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMG3404L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMG3404L Document number: DS37640 Rev. 1 - 2 6 of 6 www.diodes.com January 2015 © Diodes Incorporated