A Product Line of Diodes Incorporated Green FZT853 100V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 100V IC = 6A High Continuous Collector Current ICM = 10A Peak Pulse Current Low Saturation Voltage VCE(sat) < 150mV @ 2A RCE(sat) = 50mΩ for a Low Equivalent On-Resistance hFE Specified up to 10A for a High Gain Hold-Up Complementary PNP Type: FZT953 Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT223 Case: SOT223 Case Material: Molded Plastic. “Green” Molding Compound; UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads; Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) C B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product FZT853TA Notes: Compliance AEC-Q101 Marking FZT853 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information FZT 853 FZT853 Document Number DS33175 Rev. 5 - 2 YWW SOT223 FZT 853 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT853 Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Current Symbol VCBO VCEO VEBO IC ICM Value 200 100 7 6 10 Unit V V V A A Value 3.0 24 1.6 12.8 42 78 8.8 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance Junction to Lead Operating and Storage Temperature Range Symbol (Note 5) PD (Note 6) (Note 5) (Note 6) (Note 7) RJA RJA RJL TJ, TSTG W mW/°C °C/W °C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 8,000 400 Unit V V JEDEC Class 3B C 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. FZT853 Document Number DS33175 Rev. 5 - 2 2 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT853 Thermal Characteristics and Derating Information Max Power Dissipation (W) IC Collector Current (A) VCE(sat) 10 Limit DC 1 1s 100ms 10ms 100m Single Pulse Tamb=25°C 1ms 52mmX52mm Single sided 2oz Cu 10m 100m 1 100µs 10 100 VCE Collector-Emitter Voltage (V) 3.0 2.5 52mmX52mm Single sided 2oz Cu 2.0 1.5 1.0 25mmX25mm Single sided 1oz Cu 0.5 0.0 0 20 D=0.5 20 Single Pulse 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 30 10 Document Number DS33175 Rev. 5 - 2 100 120 140 160 Single Pulse T amb=25°C 52mmX52mm Single sided 2oz Cu 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance FZT853 80 Derating Curve 52mmX52mm Single sided 2oz Cu D=0.2 60 Temperature (°C) Safe Operating Area 40 40 Pulse Power Dissipation 3 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT853 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Symbol BVCBO BVCER BVCEO BVEBO Min 200 200 100 7 Typ 300 300 120 8.1 <1 <1 <1 200 200 100 30 14 100 250 1050 900 Max 10 1 Unit V V V V 10 1 10 300 50 150 340 1250 1100 nA µA nA Collector-Emitter Saturation Voltage (Note 9) VCE(sat) Base-Emitter Saturation Voltage (Note 9) Base-Emitter Turn-On Voltage (Note 9) VBE(sat) VBE(on) 100 100 50 20 Current Gain-Bandwidth Product (Note 9) fT 130 MHz Cobo ton toff 35 50 1650 pF Collector Cut-Off Current ICBO Collector Cut-Off Current ICER Emitter Cut-Off Current IEBO DC Current Gain (Note 9) hFE Output Capacitance (Note 9) Switching Times Note: nA µA mV mV mV ns Test Condition IC = 100µA IC = 1µA, RB ≤ 1kΩ IC = 1mA IE = 100µA VCB = 150V VCB = 150V, TA = +100°C VCB = 150V, RB ≤ 1kΩ VCB = 150V, TA = +100°C VEB = 6V IC = 10mA, VCE = 2V IC = 2A, VCE = 2V IC = 4A, VCE = 2V IC = 10A, VCE = 2V IC = 100mA, IB = 5mA IC = 2A, IB = 100mA IC = 5A, IB = 500mA IC = 5A, IB = 500mA IC = 5A, VCE = 2V IC = 100mA, VCE = 10V, f = 50MHz VCB = 10V, f = 1MHz IC = 1A, VCC = 10V, IB1 = -IB2 = 100mA 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. FZT853 Document Number DS33175 Rev. 5 - 2 4 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT853 Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 0.5 Tamb=25°C IC/IB=50 0.4 VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 IC/IB=20 150°C 0.3 100°C 0.2 25°C 0.1 IC/IB=10 1m 1m 10m -55°C 100m 1 0.0 100m 10 IC Collector Current (A) 1 VCE(SAT) v IC Normalised Gain 240 200 100°C 0.8 160 25°C 0.6 120 -55°C 0.4 80 0.2 0.0 1m 280 40 10m 100m 1 10 0 1.0 -55°C 25°C 150°C 100°C VBE(SAT) (V) VCE=2V 1.2 150°C 1.0 VCE(SAT) v IC Typical Gain (hFE) 1.4 10 IC Collector Current (A) 0.8 0.6 IC/IB=50 0.4 100m 1 10 IC Collector Current (A) IC Collector Current (A) VBE(SAT) v IC hFE v IC 1.4 150°C VBE(ON) (V) 1.2 1.0 100°C 25°C -55°C 0.8 0.6 0.4 VCE=2V 0.2 1m 10m 100m 1 10 IC Collector Current (A) VBE(ON) v IC FZT853 Document Number DS33175 Rev. 5 - 2 5 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT853 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0° -1 0° e A1 7° 7° A SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 C2 8.00 Y2 Y X Note: C For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking. FZT853 Document Number DS33175 Rev. 5 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated A Product Line of Diodes Incorporated FZT853 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com FZT853 Document Number DS33175 Rev. 5 - 2 7 of 7 www.diodes.com May 2015 © Diodes Incorporated