DMB54D0UV N-CHANNEL ENHANCEMENT MODE MOSFET PLUS PNP TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • N-Channel MOSFET and PNP Transistor in One Package Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected MOSFET Gate up to 2kV Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) D2 SOT563 B E Q1 Q2 S2 Top View ESD PROTECTED TO 2kV G2 C Top View Internal Schematic Bottom View Ordering Information (Note 3) Part Number DMB54D0UV-7 DMB54D0UV-13 Notes: Case SOT563 SOT563 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information MB2 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) MB2 YM Date Code Key Year Code 2008 V Month Code Jan 1 2009 W Feb 2 DMB54D0UV Document number: DS31676 Rev. 5 - 2 2010 X Mar 3 2011 Y Apr 4 May 5 2012 Z Jun 6 1 of 7 www.diodes.com 2013 A Jul 7 2014 B Aug 8 2015 C Sep 9 2016 D Oct O 2017 E Nov N Dec D March 2012 © Diodes Incorporated DMB54D0UV Maximum Ratings – MOSFET, Q1 Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) Pulsed Drain Current (Note 4) @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID IDM Continuous Value 50 ±12 160 560 Units V V mA mA Value -50 -45 -5.0 -100 Unit V V V mA Value 250 500 -55 to +150 Unit mW °C/W °C Maximum Ratings - PNP Transistor, Q2 @TA = 25°C unless otherwise specified Characteristic Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Characteristics, Total Device @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Operating and Storage Temperature Range Electrical Characteristics - MOSFET Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol PD RθJA TJ, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS 50 ⎯ ⎯ ⎯ ⎯ 10 V μA IGSS ⎯ ⎯ 1.0 μA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS (ON) 0.7 ⎯ ⎯ 0.8 3.1 4 1.0 4 5 Gate-Body Leakage 5.0 V Ω Forward Transconductance gFS 180 ⎯ ⎯ mS DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss ⎯ ⎯ ⎯ 25 5 2.1 ⎯ ⎯ ⎯ pF pF pF Notes: Test Condition VGS = 0V, ID = 250μA VDS = 50V, VGS = 0V VGS = ±8V, VDS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = 250μA VGS = 4V, ID = 100mA VGS = 2.5V, ID = 80mA VDS = 10V, ID = 100mA, f = 1.0KHz VDS = 10V, VGS = 0V, f = 1.0MHz 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. DMB54D0UV Document number: DS31676 Rev. 5 - 2 2 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB54D0UV Electrical Characteristics - PNP Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage (Note 5) Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage (Note 5) DC Current Gain (Note 5) Symbol V(BR)CBO V(BR)CEO V(BR)EBO hFE Min -50 -45 -5 220 Typ — — — 290 — — Max — — — 475 -100 -400 Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — Base-Emitter Saturation Voltage (Note 5) VBE(SAT) Base-Emitter Voltage (Note 5) VBE(ON) — — -700 -900 — — mV -600 — — — -750 -820 mV — — — — — -15 -4.0 -100 — 4.5 nA µA nA MHz pF — 10 dB Collector-Cutoff Current (Note 5) ICBO Collector-Emitter Cut-Off Current (Note 5) Gain Bandwidth Product Output Capacitance ICES fT COB — — — 100 — Noise Figure NF — Unit V V V — mV Test Condition IC = 10μA, IB = 0 IC = 10mA, IB = 0 IE = 1μA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = 150°C VCE = -45V VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KΩ, f = 1.0KHz, BW = 200Hz MOSFET 0.8 0.5 VGS = 10V 0.7 VDS = 10V VGS = 4.5V 0.6 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.4 0.5 VGS = 3.0V 0.4 VGS = 2.5V 0.3 0.2 TA = 85°C TA = 25°C TA = -55°C 0.3 T A = 150°C TA = 125°C 0.2 0.1 0.1 VGS = 1.5V VGS = 1.0V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMB54D0UV Document number: DS31676 Rev. 5 - 2 0 5 0 1 2 3 VGS, GATE SOURCE VOLTAGE (V) 4 Fig. 2 Typical Transfer Characteristics 3 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB54D0UV 10 VGS = 2.5V VGS = 4.0V 1 0.001 0.01 0.1 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 2.0 TA = 85°C TA = 25°C TA = -55°C 1 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 30 VGS = 4V ID = 100mA 1.6 1.4 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TA = 125°C 35 1.8 VGS = 2.5V ID = 80mA 1.2 1.0 0.8 25 Ciss 20 f = 1MHz VGS = 0V 15 10 5 0.6 0.4 -50 Coss Crss 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 40 1 1.1 1.0 0.9 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) TA = 150°C ID = 250µA 0.8 0.7 0.1 TA = 150°C 0.01 TA = 125°C TA = 85°C 0.001 TA = 25°C T A = -55°C 0.6 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMB54D0UV Document number: DS31676 Rev. 5 - 2 0.0001 0.1 4 of 7 www.diodes.com 0.3 0.5 0.7 0.9 1.1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current March 2012 © Diodes Incorporated DMB54D0UV PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 RθJA = 500°C/W 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (° C) Fig. 9 Derating Curve - Total Package Power Dissipation PNP Transistor 0.5 TA = 150°C VCE = 5V IC IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 T A = 25°C TA = -50°C 10 0.4 0.3 TA = 25°C 0.2 T A = 150°C 0.1 T A = -50°C 1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical DC Current Gain vs. Collector Current 0 0.1 1,000 10 100 1 IC, COLLECTOR CURRENT (mA) Fig. 11 Collector-Emitter Saturation Voltage vs. Collector Current 1,000 ft, GAIN-BANDWIDTH PRODUCT (MHz) VCE = 5V 100 10 10 100 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Gain-Bandwidth Product vs. Collector Current 1 DMB54D0UV Document number: DS31676 Rev. 5 - 2 5 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB54D0UV Package Outline Dimensions A B SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm C D G M K H L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X DMB54D0UV Document number: DS31676 Rev. 5 - 2 6 of 7 www.diodes.com March 2012 © Diodes Incorporated DMB54D0UV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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