DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(on) max 30V 60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V ID TA = +25°C 3.2A 2.7A 2.1A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications General Purpose Interfacing Switch Power Management Functions Analog Switch Case: SOT26 Case Material – Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.015 grams (approximate) SOT26 Top View ESD PROTECTED D4 D3 S1 D1 D2 G1 Top View Internal Schematic Ordering Information (Note 4 & 5) Part Number DMN3115UDM-7 DMN3115UDMQ-7 DMN3115UDM-13 DMN3115UDMQ-13 Notes: Qualification Commercial Automotive Commercial Automotive Case SOT26 SOT26 SOT26 SOT26 Packaging 3,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2007 U Jan 1 2008 V Feb 2 DMN3115UDM Document number: DS31187 Rev. 8 - 2 2009 W Mar 3 Apr 4 3N1 = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September) YM 3N1 2010 X May 5 2011 Y Jun 6 1 of 5 www.diodes.com 2012 Z Jul 7 Aug 8 2013 A Sep 9 2014 B Oct O 2015 C Nov N Dec D November 2013 © Diodes Incorporated DMN3115UDM Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 6) Pulsed Drain Current (Note 6) Symbol VDSS VGSS ID IDM Value 30 ±8 3.2 12.8 Units V V A A Symbol PD RθJA TJ, TSTG Value 900 139 -55 to +150 Units mW °C/W °C Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Min Typ Max Unit BVDSS IDSS IGSS 30 1 5 V μA μA VGS = 0V, ID = 100μA VDS = 30V, VGS = 0V VGS = 8V, VDS = 0V VGS(th) 0.5 1.0 V RDS (ON) 40 50 76 60 80 130 mΩ |Yfs| VSD 8 0.7 1.1 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6A VGS = 2.5V, ID = 2A VGS = 1.5V, ID = 1.0A VDS =10V, ID = 6A VGS = 0V, IS = 2A Ciss Coss Crss 476 77 59 pF pF pF Test Condition VDS = 15V, VGS = 0V f = 1.0MHz 6. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads. 7. Short duration pulse test used to minimize self-heating effect. 10 10 9 9 8 8 7 6 5 4 3 ID , DRAIN CURRENT (A) Notes: Symbol 7 6 5 4 3 2 2 1 1 0 0 DMN3115UDM Document number: DS31187 Rev. 8 - 2 2 of 5 www.diodes.com VDS = 5V Pulsed TA = 150°C T A = 85°C TA = 25°C TA = -55°C 0 0.5 1 1.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2 November 2013 © Diodes Incorporated DMN3115UDM 1.6 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 1.5 1.4 1.3 1.2 0.1 VGS = 1.5V 1.1 VGS = 2.5V 1.0 0.9 VGS = 4.5V 0.8 0.7 0.01 0.01 0.6 0.1 1 10 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 0.8 Ciss ID = 250µA 0.7 C CAPACITANCE (pF) VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.9 0.6 0.5 0.4 0.3 Coss Crss 0.2 0.1 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance 30 IS, SOURCE CURRENT (A) 10 1 TA = 150°C 0.1 TA = 125°C 0.01 TA = 85°C 0.001 TA = 25°C TA = -55°C 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage DMN3115UDM Document number: DS31187 Rev. 8 - 2 3 of 5 www.diodes.com November 2013 © Diodes Incorporated DMN3115UDM Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° All Dimensions in mm B C H K M J D L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X DMN3115UDM Document number: DS31187 Rev. 8 - 2 4 of 5 www.diodes.com November 2013 © Diodes Incorporated DMN3115UDM IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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