ZXMS6004FF DMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET Product Summary Continuos Drain Source Voltage On-State Resistance Nominal Load Current (VIN = 5V) Clamping Energy Features and Benefits 60V 500mΩ 1.3A 90mJ Description The ZXMS6004FF is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. Compact High Power Dissipation Package Low Input Current Logic Level Input (3.3V and 5V) Short Circuit Protection with Auto Restart Over Voltage Protection (active clamp) Thermal Shutdown with Auto Restart Over-Current Protection Input Protection (ESD) High Continuous Current Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Especially suited for loads with a high in-rush current such as lamps and motors All types of resistive, inductive and capacitive loads in switching applications μC compatible power switch for 12V and 24V DC applications Automotive rated Replaces electromechanical relays and discrete circuits Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimize on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low VDS Case: SOT-23F Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.012 grams (Approximate) SOT23F S D IN Top View Top view Pin Out Ordering Information (Note 4) Product ZXMS6004FFTA Notes: Marking 1K6 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 1K6 1K6 = Product type Marking Code IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 1 of 8 ZXMS6004FF www.diodes.com Document number: DS33609 Rev. 6 - 2 October 2014 © Diodes Incorporated ZXMS6004FF DMN2027USS Functional Block Diagram Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Continuous Drain-Source Voltage Drain-Source Voltage for Short Circuit Protection Continuous Input Voltage Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V Pulsed Drain Current @VIN = 3.3V Pulsed Drain Current @VIN = 5V Continuous Source Current (Body Diode) (Note 5) Pulsed Source Current (Body Diode) Unclamped Single Pulse Inductive Energy, TJ = +25°C, ID = 0.5A, VDD = 24V Electrostatic Discharge (Human Body Model) Charged Device Model Thermal Characteristics Units V V V IDM IDM IS ISM Value 60 36 -0.5 to +6 No limit │IIN │≤2 2 2.5 1 5 EAS 90 mJ VESD VCDM 4000 1000 V V Value 0.83 6.66 1.5 12.0 150 83 44 -40 to +150 -55 to +150 Units W mW/°C W mW/°C C/W °C/W °C/W °C °C IIN mA A A A A (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor Power Dissipation at TA = +25°C (Note 6) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating Temperature Range Storage Temperature Range Notes: Symbol VDS VDS(SC) VIN Symbol PD PD RθJA RθJA RθJC TJ TSTG 5. For a device surface mounted on 15mm x 15mm single sided, 1oz weight copper on 1.6mm FR4 board, in still air conditions. 6. For a device surface mounted on 50mm x 50mm single sided, 2oz weight copper on 1.6mm FR4 board, in still air conditions. 7. Thermal resistance from junction and the mounting surfaces of the drain pins. IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 2 of 8 ZXMS6004FF www.diodes.com Document number: DS33609 Rev. 6 - 2 October 2014 © Diodes Incorporated ZXMS6004FF DMN2027USS Recommended Operating Conditions The ZXMS6004FF is optimized for use with µC operating from 3.3V and 5V supplies. Characteristic Input Voltage Range Ambient Temperature Range High Level Input Voltage for MOSFET to be On Low Level Input Voltage for MOSFET to be Off Peripheral Supply Voltage (voltage to which load is referred) Symbol VIN TA VIH VIL VP Min 0 -40 3 0 0 Max 5.5 +125 5.5 0.7 36 Unit V °C V V V 1 DC 1s 100m 100ms Single Pulse T 10m 10ms =25°C amb 15X15mm FR4 1ms Limit of s/c protection 1oz Cu 1 Thermal Resistance (°C/W) Max Power Dissipation (W) Limited by Over-Current Protection Limited by RDS(on) 10 1.6 1.4 1.2 50X50mm FR4 2oz Cu 1.0 0.8 0.6 0.4 15X15mm FR4 0.2 0.0 1oz Cu 0 25 50 75 100 VDS Drain-Source Voltage (V) Temperature (°C) Safe Operating Area Derating Curve 125 150 160 140 120 Tamb=25°C 15X15mm FR4 1oz Cu Maximum Power (W) ID Drain Current (A) Thermal Characteristics 100 80 D=0.5 60 40 Single Pulse D=0.2 D=0.05 20 0 100µ D=0.1 1m 10m 100m 1 10 100 Pulse Width (s) Transient Thermal Impedance 1k 100 Single Pulse Tamb=25°C 15X15mm FR4 1oz Cu 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 3 of 8 ZXMS6004FF www.diodes.com Document number: DS33609 Rev. 6 - 2 October 2014 © Diodes Incorporated ZXMS6004FF DMN2027USS Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Static Characteristics Drain-Source Clamp Voltage Symbol Min Typ Max Unit VDS(AZ) 60 — — 0.7 — — — — — 0.9 1.0 1.2 1.3 0.7 1 65 — — 1 60 120 — 400 350 — — — — 1.7 2.2 70 500 1 1.5 100 200 220 600 500 — — — — — — V nA µA V td(on) tr td(off) ff — — — — 5 10 45 15 — — — — μs VDD = 12V, ID = 0.5A, VGS = 5V TJT ff +150 — +175 +10 — — °C °C — — Off State Drain Current IDSS Input Threshold Voltage VIN(th) Input Current IIN Input Current While Over Temperature Active — Static Drain-Source On-State Resistance RDS(on) Continuous Drain Current (Note 5) ID Continuous Drain Current (Note 6) Current Limit (Note 8) Dynamic Characteristics Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Over-Temperature Protection Thermal Overload Trip Temperature (Note 9) Thermal Hysteresis (Note 9) Notes: ID(LIM) μA μA mΩ A A Test Condition ID = 10mA VDS = 12V, VIN = 0V VDS = 36V, VIN = 0V VDS = VGS, ID = 1mA VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 0.5A VIN = +5V, ID = 0.5A VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = +3V VIN = +5V 8. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used fully in the on-state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 9. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 4 of 8 ZXMS6004FF www.diodes.com Document number: DS33609 Rev. 6 - 2 October 2014 © Diodes Incorporated ZXMS6004FF DMN2027USS 120 T A = 25°C 3 VIN 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 2 1 IIN Input Current (A) ID Drain Current (A) Typical Characteristics 0 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 4 5 Input Current vs Input Voltage Typical Output Characteristic 1.4 1.4 ID = 0.5A 1.2 1.0 0.8 0.6 T J = 150°C 0.4 0.2 0.0 1.5 T J = 25°C 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTH Threshold Voltage (V) RDS(on) On-Resistance () 3 VIN Input Voltage (V) VDS Drain-Source Voltage (V) VIN = VDS 1.3 ID = 1mA 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) VIN Input Voltage (V) On-Resistance vs Input Voltage Threshold Voltage vs Temperature 0.9 10 0.8 0.7 VIN = 3V 0.6 0.5 0.4 VIN = 5V 0.3 0.2 -75 -50 -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) On-Resistance vs Temperature IS Source Curent (A) RDS(on) On-Resistance () 2 T J=150°C 1 T J=25°C 0.1 0.01 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Reverse Diode Characteristic IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 5 of 8 ZXMS6004FF www.diodes.com Document number: DS33609 Rev. 6 - 2 October 2014 © Diodes Incorporated ZXMS6004FF DMN2027USS Drain-Source Voltage (V) Drain-Source Voltage (V) Typical Characteristics (cont.) 12 ID=500mA 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 ID=500mA VDS 10 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (s) Time (s) Switching Speed Switching Speed ID Drain Current (A) 2.5 VIN = 5V VDS = 15V 2.0 RD = 0 1.5 1.0 0.5 0.0 0 5 10 15 20 Time (ms) Typical Short Circuit Protection IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 6 of 8 ZXMS6004FF www.diodes.com Document number: DS33609 Rev. 6 - 2 October 2014 © Diodes Incorporated ZXMS6004FF DMN2027USS Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. c D b Seating Plane L1 E1 SOT23F Dim Min Max Typ A 0.80 1.00 0.90 b 0.35 0.45 0.40 c 0.06 0.16 0.11 D 2.80 3.00 2.90 e 0.95 e1 1.90 E 2.30 2.50 2.40 E1 1.50 1.70 1.60 k 1.10 1.26 1.18 L 0.48 0.68 0.58 L1 0.39 0.41 0.40 R 0.05 0.15 0.10 All Dimensions in mm E e1 e A R L k Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C Dimensions C X Y Y1 Y1 Value (in mm) 0.95 0.80 1.110 3.000 Y IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 7 of 8 ZXMS6004FF www.diodes.com Document number: DS33609 Rev. 6 - 2 October 2014 © Diodes Incorporated ZXMS6004FF DMN2027USS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com IntelliFET is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 8 of 8 ZXMS6004FF www.diodes.com Document number: DS33609 Rev. 6 - 2 October 2014 © Diodes Incorporated