DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS Q1 N-Channel 20V Q2 P-Channel -20V Features RDS(ON) max ID MAX TA = +25°C 40mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V 90mΩ @ VGS = -4.5V 137mΩ @ VGS = -2.5V 4.7A 3.7A -3.2A -2.6A Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Below Weight: 0.0065 grams (Approximate) ideal for high efficiency power management applications. Applications Load Switch Power Management Functions Portable Power Adaptors D1 U-DFN2020-6 D2 S2 G2 D2 D1 D2 D1 G1 G2 G1 ESD PROTECTED Gate Protection Diode S1 S1 Gate Protection Diode Pin1 S2 Q2 P-CHANNEL MOSFET Q1 N-CHANNEL MOSFET Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMC2041UFDB -7 DMC2041UFDB -13 Notes: Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMC2041UFDB Document number: DS37420 Rev. 2 - 2 Mar 3 D4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) YM D4 2016 D Apr 4 May 5 2017 E Jun 6 1 of 9 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D February 2015 © Diodes Incorporated DMC2041UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage VDSS VGSS Continuous Drain Current (Note 5) VGS = 4.5V Steady State t < 5s TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Q1 N-CHANNEL 20 ±12 4.7 3.8 Q2 P-CHANNEL -20 ±12 -3.2 -2.5 6.1 4.9 2 30 -4.1 -3.2 -1.5 -18 ID Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) IS IDM Units V V A A A A Thermal Characteristics Characteristic Symbol Steady State t < 5s Steady State t < 5s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) 1.4 2.2 92 55 PD RJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Value RJC 30 TJ, TSTG -55 to 150 Units W °C/W °C Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit Test Condition BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V VGS(th) 0.35 — 1.4 V VDS = VGS, ID = 250μA — 23 40 — 26 65 VSD — 0.7 1.2 V Input Capacitance Ciss — 713 — pF Output Capacitance Coss — 80 — pF Reverse Transfer Capacitance Crss — 68 — pF Gate Resistance Rg — 15 — Ω — 8 — nC — 15 — nC Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS (ON) mΩ VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.3A VGS = 0V, IS = 4.4A DYNAMIC CHARACTERISTICS (Note 7) Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Qg VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 5.5A Gate-Source Charge Qgs — 1.0 — nC Gate-Drain Charge Qgd — 1.1 — nC Turn-On Delay Time tD(on) — 3.6 — ns Turn-On Rise Time tr — 15.9 — ns Turn-Off Delay Time tD(off) — 16.0 — ns Turn-Off Fall Time tf — 2.6 — ns Body Diode Reverse Recovery Time trr — 6.6 — nS IS = 4.4A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 1.2 — nC IS = 4.4A, dI/dt = 100A/μs Notes: VDD = 10V, VGS = 4.5V, RL = 2.3Ω, RG = 1Ω 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMC2041UFDB Document number: DS37420 Rev. 2 - 2 2 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC2041UFDB Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit Test Condition BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V VGS(th) -0.35 — -1.4 V VDS = VGS, ID = -250μA — 59 90 — 76 137 VSD — -0.65 -1.2 V Input Capacitance Ciss — 881 — pF Output Capacitance Coss — 84 — pF Reverse Transfer Capacitance Crss — 67 — pF Gate Resistance Rg — 14.3 — Ω — 11 — nC — 18 — nC Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance RDS (ON) Diode Forward Voltage mΩ VGS = -4.5V, ID = -2.9A VGS = -2.5V, ID = -2.3A VGS = 0V, IS = -3.0A DYNAMIC CHARACTERISTICS (Note 7) Total Gate Charge (VGS = -4.5V) Qg Total Gate Charge (VGS = -8V) VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -10V, ID = -3.7A Gate-Source Charge Qgs — 1.5 — nC Gate-Drain Charge Qgd — 2.3 — nC Turn-On Delay Time tD(on) — 5.0 — ns Turn-On Rise Time tr — 9.5 — ns Turn-Off Delay Time tD(off) — 29.7 — ns tf — 20.4 — ns Body Diode Reverse Recovery Time trr — 23.6 — nS IS = -3.0A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 11.4 — nC IS = -3.0A, dI/dt = 100A/μs Turn-Off Fall Time 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 20 18 VGS = 4.5V VGS = 1.5V 16 14 VGS = 2.5V 12 VDS = 5.0V 18 VGS = 3.0V 16 ID, DRAIN CURRENT (A) 20 VGS = 8.0V ID, DRAIN CURRENT (A) Notes: VDD = -10V, VGS = -4.5V, RL = 3.3Ω, RG = 1Ω VGS = 2.0V 10 8 6 14 12 10 8 6 TA = 150°C 4 4 VGS = 1.0V 2 TA = 125°C 2 TA = 85°C TA = 25°C TA = -55°C 0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics DMC2041UFDB Document number: DS37420 Rev. 2 - 2 3 3 of 9 www.diodes.com 0 0 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2 February 2015 © Diodes Incorporated 0.03 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMC2041UFDB 0.029 0.028 VGS = 2.5V 0.027 0.026 0.025 VGS = 4.5V 0.024 0.023 0.022 0.021 0.02 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 R DS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 VGS = 2.5V ID = 3.3A 1.6 1.4 VGS = 4.5V ID = 4.2A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature TA = 150°C TA = 125°C 0.035 TA = 85°C 0.03 TA = 25°C 0.025 0.02 0.015 TA = -55°C 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.05 VGS = 2.5V ID = 3.3A 0.04 0.03 VGS = 4.5V ID = 4.2A 0.02 0.01 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 20 1 18 0.8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) VGS = 4.5V ID = 1mA 0.6 ID = 250µA 0.4 16 14 12 10 8 6 TA = 150°C 4 0.2 TA = 125°C 2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Ambient Temperature DMC2041UFDB Document number: DS37420 Rev. 2 - 2 4 of 9 www.diodes.com 0 TA = 85°C TA = 25°C TA = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current February 2015 © Diodes Incorporated DMC2041UFDB 10000 1000 CT, JUNCTION CAPACITANCE (pF) C T, JUNCTION CAPACITANCE (pF) 10000 Ciss 100 Coss C rss 1000 C iss 100 C oss Crss f =1MHz 10 f = 1MHz 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 20 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 RDS(on) Limited 7 ID, DRAIN CURRENT (A) 6 VDS = 10V ID = 5.5A 5 4 3 2 10 DC 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge PW = 10s 1 PW = 1s PW = 100ms 0.1 1 0 2 100 8 VGS GATE THRESHOLD VOLTAGE (V) 0 PW = 10ms TJ(max) = 150°C TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 16 15.0 PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 15 VGS = -8.0V VDS = -5.0V VGS = -4.5V 12 VGS = -3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 12.0 VGS = -2.5V VGS = -2.0V 9.0 VGS = -1.8V 6.0 VGS = -1.5V 9 6 3 3.0 TA = 150°C TA = 125°C TA = 85°C T A = 25°C TA = -55°C 0.0 0 1 2 3 4 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 13 Typical Output Characteristics DMC2041UFDB Document number: DS37420 Rev. 2 - 2 5 5 of 9 www.diodes.com 0 0 0.5 1 1.5 2 2.5 V GS, GATE-SOURCE VOLTAGE (V) Figure14 Typical Transfer Characteristics 3 February 2015 © Diodes Incorporated 0.14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMC2041UFDB 0.12 0.1 VGS = -2.5V 0.08 VGS = -4.5V 0.06 0.04 0 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Figure 15 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -4.5V ID = -2.9A 1.4 VGS = -2.5V ID = -2.3A 1 0.8 0.6 -50 TA = 125°C TA = 85°C 0.07 T A = 25°C 0.06 0.05 0.03 3 6 9 12 ID, DRAIN CURRENT (A) Figure 16 Typical On-Resistance vs. Drain Current and Temperature 15 0.12 VGS = -2.5V ID = -2.3A 0.1 0.08 VGS = -4.5V ID = -2.9A 0.06 0.04 0.02 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18 On-Resistance Variation with Temperature 15 IS, SOURCE CURRENT (A) 1 VGS(th), GATE THRESHOLD VOLTAGE (V) TA = -55°C 0.04 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 17 On-Resistance Variation with Temperature 0.8 ID = -1mA 0.6 T A = 150°C 0.08 0 R DS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V 0.09 15 1.6 1.2 0.1 ID = -250µA 0.4 12 9 6 TA = 150°C 3 T A = 125°C TA = 85°C TA = 25°C TA = -55°C 0 0.2 -50 0 -25 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 19 Gate Threshold Variation vs. Ambient Temperature DMC2041UFDB Document number: DS37420 Rev. 2 - 2 6 of 9 www.diodes.com VSD, SOURCE-DRAIN VOLTAGE (V) Figure 20 Diode Forward Voltage vs. Current February 2015 © Diodes Incorporated DMC2041UFDB 8 VGS GATE THRESHOLD VOLTAGE (V) C T, JUNCTION CAPACITANCE (pF) 10000 Ciss 1000 100 Coss C rss f =1MHz 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 21 Typical Junction Capacitance 20 7 6 5 VDS = -10V ID = -3.7A 4 3 2 1 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) Figure 22 Gate Charge 18 20 100 ID, DRAIN CURRENT (A) RDS(on) Limited 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 TJ(max) = 150°C TA = 25°C VGS = -4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 10ms PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 23 SOA, Safe Operation Area r(t), TRANSIENT THERMAL RESISTANCE 1 100 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 163°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMC2041UFDB Document number: DS37420 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 24 Transient Thermal Resistance 7 of 9 www.diodes.com 10 100 1000 February 2015 © Diodes Incorporated DMC2041UFDB Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the version. A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 G X2 G1 X1 G Y1 Z DMC2041UFDB Document number: DS37420 Rev. 2 - 2 8 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC2041UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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