A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage (150mV max @ 1A) • RSAT = 47mΩ for a low equivalent On-Resistance • hFE characterized up to 6A for high current gain hold up • • • • • • • Schottky Diode • BVR > 40V • IFAV = 3A Average Peak Forward Current • Low VF < 500mV (@1A) for reduced power loss • Fast switching due to Schottky barrier Case: DFN3020B-8 Case Material: Molded Plastic, “Green” Molding Component Terminals: Pre-Plated NiPdAu leadframe Nominal package height: 0.8mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.013 grams (approximate) Applications Low profile 0.8mm high package for thin applications RθJA efficient, 40% lower than SOT26 2 6mm footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • DC – DC Converters Charging circuits Mobile phones Motor control Portable applications C1 DFN3020B-8 K2 K2 B1 NPN Transistor Bottom View C1 K2 A2 E1 Top View K2 A2 Schottky Diode Equivalent Circuit C1 C1 n/c E1 B1 Pin 1 Bottom View Pin-Out n/c = Not Connected internally Ordering Information (Note 3) Product ZXTNS618MCTA Notes: Marking BS1 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com 3. For packaging details, go to our website http://www.diodes.com Marking Information BS1 ZXTNS618MC Document Number DS31933 Rev. 4 - 2 BS1 = Product type marking code Top view, dot denotes pin 1 1 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC NPN - Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol VCBO VCEO VEBO ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current (Notes 4 and 7) (Notes 5 and 7) Base Current IC IB Limit 40 20 7 12 4.5 5 1 Unit Value 1.5 12 2.45 19.6 1.13 8 1.7 13.6 83.3 51.0 111 73.5 17.1 -55 to +150 Unit V A NPN - Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol (Notes 4 & 7) Power Dissipation Linear Derating Factor (Notes 5 & 7) PD (Notes 6 & 7) (Notes 6 & 8) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range Notes: (Notes 4 & 7) (Notes 5 & 7) (Notes 6 & 7) (Notes 6 & 8) (Note 9) RθJA RθJL TJ, TSTG W mW/°C °C/W °C 4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half. 5. Same as note (4), except the device is measured at t <5 sec. 6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (on the exposed collector pad). ZXTNS618MC Document Number DS31933 Rev. 4 - 2 2 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC NPN - Thermal Characteristics 0.1 10ms 8sqcm 2oz Cu One active die Single Pulse 0.01 0.1 1ms 100us T amb=25°C 1 10 VCE Collector-Emitter Voltage (V) 1.0 0.5 e i d e v i t c a e n O Max Power Dissipation (W) 1s 100ms e i d e v i t c a e n O DC u C z o 2 m c q s 8 1 1.5 u C z o 1 m c q s 0 1 IC Collector Current (A) Limited e i d e v i t c a o w T 10 u C z o 1 m c q s 0 1 2.0 VCE(SAT) 0.0 0 25 50 75 100 125 150 Temperature (°C) Derating Curve Safe Operating Area 60 D=0.5 40 20 Single Pulse D=0.2 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Thermal Resistance (°C/W) Thermal Resistance (°C/W) 225 8sqcm 2oz Cu One active die 80 200 1oz copper One active die 175 1oz copper Two active die 150 125 100 75 50 2oz copper One active die 2oz copper Two active die 25 0 0.1 Pulse Width (s) 1 10 100 Board Cu Area (sqcm) Thermal Resistance v Board Area Transient Thermal Impedance 3.5 2oz copper Two active die PD Dissipation (W) T amb=25°C 3.0 T =150°C j max 2.5 Continuous 2.0 2oz copper One active die 1.5 1.0 0.5 1oz copper One active die 0.0 0.1 1 1oz copper Two active die 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ZXTNS618MC Document Number DS31933 Rev. 4 - 2 3 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC Schottky - Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol VR IF Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current D = 0.5 Pulse width ≤ 300µs t ≤ 100µs t ≤ 10ms Limit 40 1.85 IFRM 3 IFSM 12 7 Unit V A Schottky - Thermal Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol (Notes 10 & 13) Power Dissipation Linear Derating Factor (Notes 11 & 13) PD (Notes 12 & 13) (Notes 12 & 14) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Maximum Junction Temperature Notes: (Notes 10 & 13) (Notes 11 & 13) (Notes 12 & 13) (Notes 12 & 14) (Note 15) RθJA RθJL TSTG TJ Value 1.2 12 2 20 0.9 9 1.36 13.6 83.3 51.0 111 73.5 20.2 -55 to +150 125 Unit W mW/°C °C/W °C 10. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed cathode and collector pads connected to each half. 11. Same as note (10), except the device is measured at t <5 sec. 12. Same as note (10), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper. 13. For a dual device with one active die. 14. For dual device with 2 active die running at equal power. 15. Thermal resistance from junction to solder-point (on the exposed cathode pad). ZXTNS618MC Document Number DS31933 Rev. 4 - 2 4 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC Schottky - Thermal Characteristics 80 60 D=0.5 40 20 Single Pulse D=0.2 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Max Power Dissipation (W) Thermal Resistance (°C/W) 1.5 8sqcm 2oz Cu One active die 10sqcm 1oz Cu Two active die 8sqcm 2oz Cu One active die 1.0 10sqcm 1oz Cu One active die 0.5 0.0 0 Pulse Width (s) 100 125 Tj max=125°C 2oz Cu Two active die Continuous 2.0 2oz Cu One active die 1.0 0.5 1oz Cu One active die 0.0 0.1 1 1oz Cu Two active die 10 100 Thermal Resistance (°C/W) 225 Tamb=25°C PD Dissipation (W) 75 Derating Curve 3.0 1.5 50 Temperature (°C) Transient Thermal Impedance 2.5 25 200 ZXTNS618MC Document Number DS31933 Rev. 4 - 2 1oz Cu Two active die 150 125 100 75 50 2oz Cu One active die 2oz Cu Two active die 25 0 0.1 Board Cu Area (sqcm) Power Dissipation v Board Area 1oz Cu One active die 175 1 10 100 Board Cu Area (sqcm) Thermal Resistance v Board Area 5 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC NPN - Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 16) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES Collector-Emitter Saturation Voltage (Note 16) VCE(sat) Base-Emitter Turn-On Voltage (Note 16) Base-Emitter Saturation Voltage (Note 16) Output Capacitance VBE(on) VBE(sat) Cobo Min 40 20 7 200 300 200 100 - Static Forward Current Transfer Ratio (Note 16) hFE Typ 100 27 8.2 400 450 360 180 8 90 115 190 210 0.88 0.98 23 Max 100 100 100 15 150 135 250 300 -0.97 -1.07 30 Unit V V V nA nA nA Transition Frequency fT 100 140 - MHz Turn-on Time Turn-off Time ton toff - 170 400 - ns ns - mV V V pF Test Condition IC = 100µA IC = 10mA IE = 100µA VCB = 32V VEB = 6V VCES = 16V IC = 10mA, VCE = 2V IC = 200mA, VCE = 2V IC = 2A, VCE = 2V IC = 6A, VCE = 2V IC =0.1A, IB = 10mA IC = 1A, IB = 10mA IC = 2A, IB = 50mA IC = 3A, IB = 100mA IC = 4.5A, IB= 125mA IC = 4.5A, VCE = 2V IC= 4.5A, IB = 125mA VCB = 10V, f = 1MHz VCE = 10V, IC = 50mA, f = 100MHz VCC=10V, IC=3A IB1 = IB2 = 10mA Schottky - Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage Forward Voltage (Note 16) VF Reverse Current Diode Capacitance IR CD Min 40 - Reverse Recovery Time trr - Notes: Symbol BVR Typ 60 240 265 305 355 390 425 495 420 50 25 Max 270 290 340 400 450 500 600 100 - Unit V 12 - Ns mV µA pF Test Condition IR = -300µA IF = 50mA IF = 100mA IF = 250mA IF = 500mA IF = 750mA IF = 1000mA IF = 1500mA IF = 1000mA, TA = 100°C VR = 30V VR = 25V, f = 1MHz switched from IF = 500mA to IR = 500mA Measured at IR = 50mA 16. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. ZXTNS618MC Document Number DS31933 Rev. 4 - 2 6 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC NPN - Typical Electrical Characteristics 0.25 IC/IB=50 Tamb=25°C 0.20 100°C VCE(SAT) (V) VCE(SAT) (V) 100m IC/IB=100 10m IC/IB=50 IC/IB=10 1m 1m 10m 100m 1 10 IC Collector Current (A) 0.15 25°C 0.10 -55°C 0.05 0.00 1m 10m 100m 1 10 1 10 IC Collector Current (A) VCE(SAT) v IC VCE(SAT) v IC 630 1.0 100°C 0.8 450 360 25°C 0.6 270 -55°C 0.4 180 0.2 0.0 1m 90 10m 100m 1 IC Collector Current (A) 10 1.0 540 0 VBE(SAT) (V) Normalised Gain 1.2 Typical Gain (hFE) VCE=2V 0.8 -55°C VBE(ON) (V) 25°C 0.6 100°C 0.4 1m hFE v IC 1.0 IC/IB=50 10m 100m IC Collector Current (A) VBE(SAT) v IC VCE=2V 0.8 -55°C 0.6 25°C 100°C 0.4 1m 10m 100m 1 IC Collector Current (A) 10 VBE(ON) v IC ZXTNS618MC Document Number DS31933 Rev. 4 - 2 7 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC Schottky - Typical Electrical Characteristics IR - Reverse Current (A) IF - Forward Current (A) 100m 1 +125°C 10m 100m +85°C 1m 100µ +125°C +85°C +25°C 0°C -40°C -55°C 10m 1m 0.0 0.2 0.4 +25°C 10µ 0°C -40°C -55°C 1µ 100n 10n 0.6 0 10 20 Foward Current (A) IFRM - Repetitive Peak 8 6 4 PFAV - Average Forward Power (W) Repetitive Rating Rectangular Pulse Width=300μs D= 0.02 0.05 0.1 0.2 0.5 1 2 0 25 50 75 100 125 TA - Ambient Temp (°C) 50 1.2 1.0 D= 1 0.5 0.2 0.1 0.05 0.02 0.8 0.6 0.4 Repetitive Rating Rectangular Pulse Width=300μs Tj = 125°C 0.2 0.0 0 2 4 6 8 10 12 14 16 IFRM - Repetitive Peak Foward Current (A) IFRM v TA PFAV v IFRM 125 200 Typical Tj = 125°C 100 Rth(j-a)= 50°C/W 83°C/W 100°C/W 150°C/W 200°C/W 300°C/W 75 50 0 5 10 15 20 25 30 35 40 VR - Continuous Reverse Voltage (V) CD - Diode Capacitance (pF) TA - Ambient Temp (°C) 40 IR v VR IF v VF 10 30 VR - Reverse Voltage (V) VF - Forward Voltage (V) 150 125 100 TA v VR ZXTNS618MC Document Number DS31933 Rev. 4 - 2 f = 1MHz 175 75 50 25 0 100m 1 10 VR - Reverse Voltage (V) CD v VR 8 of 10 www.diodes.com June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC Package Outline Dimensions A DFN3020B-8 Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 2.95 3.075 3.00 D2 0.82 1.02 0.92 D4 1.01 1.21 1.11 e 0.65 E 1.95 2.075 2.00 E2 0.43 0.63 0.53 L 0.25 0.35 0.30 Z 0.375 All Dimensions in mm A3 A1 D D4 D4 D2 E E2 b Z e L Suggested Pad Layout C X Y1 G1 G Y2 Y X1 ZXTNS618MC Document Number DS31933 Rev. 4 - 2 Dimensions C G G1 X X1 Y Y1 Y2 9 of 10 www.diodes.com Value (in mm) 0.650 0.285 0.090 0.400 1.120 0.730 0.500 0.365 June 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXTNS618MC IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com ZXTNS618MC Document Number DS31933 Rev. 4 - 2 10 of 10 www.diodes.com June 2011 © Diodes Incorporated