DMG8601UFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • NEW PRODUCT Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: U-DFN3030-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - NiPdAu over Copper lead frame. Solderable per MIL-STD-202, Method 208 e4 Polarity: See Diagram Weight: 0.0172 grams (approximate) 5 6 7 8 8 7 6 5 2 3 4 U-DFN3030-8 D1/D2 ESD PROTECTED TO 2kV G2 S2 G1 S1 4 3 2 1 Bottom View Top View Bottom View Pin Configuration 1 Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMG8601UFG-7 Notes: Case U-DFN3030-8 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. YYWW Marking Information 2N4 DMG8601UFG Document number: DS31788 Rev. 5 - 2 2N4 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) WW = Week code (01 to 53) 1 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Steady State Unit V V IDM Value 20 ±12 6.1 5.2 27 Symbol PD RθJA TJ, TSTG Value 0.92 136 -55 to +150 Unit W °C/W °C TA = +25°C TA = +70°C ID NEW PRODUCT Pulsed Drain Current A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage Gate-Source Breakdown Voltage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS BVSGS 20 ±12 - 1.0 ±10 - V μA μA V VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±10V, VDS = 0V VDS = 0V, IG = ±250μA VGS(th) 0.35 - 1.05 V Static Drain-Source On-Resistance RDS (ON) - 17 20 25 23 27 34 mΩ |Yfs| VSD - 10 0.7 1.0 S V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.5A VGS = 1.8V, ID = 3.5A VDS = 10V, ID = 5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 143 74 29 202 8.8 1.4 3.0 53 78 562 234 - pF pF pF Ω nC nC nC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 6.5A VDD = 10V, VGS = 4.5V, RL = 10Ω, RG = 6Ω 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. DMG8601UFG Document number: DS31788 Rev. 5 - 2 2 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG 30 40 VGS = 8.0V 36 28 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V 25 VGS = 3.0V 32 VGS = 2.5V 24 20 16 12 20 15 10 VGS = 2.0V 8 TA = 150°C 5 TA = 125°C TA = -55°C 0 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 3.0 0.05 0.04 0.03 VGS = 1.8V 0.02 VGS = 2.5V VGS = 4.5V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 5.0V ID = 10A 1.1 0.9 0.7 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG8601UFG Document number: DS31788 Rev. 5 - 2 VGS = 4.5V 0.04 0.03 T A = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.5V ID = 5.5A -25 3.0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 0.5 -50 0.5 1.0 1.5 2.0 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.05 30 1.7 1.3 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 TA = 85°C T A = 25°C 4 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VGS = 4.5V 3 of 6 www.diodes.com 0.05 0.04 VGS = 2.5V ID = 5.5A 0.03 0.02 VGS = 5.0V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature September 2012 © Diodes Incorporated DMG8601UFG VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 IS, SOURCE CURRENT (A) 16 1.2 ID = 1mA 0.8 ID = 250µA 0.4 8 4 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 100,000 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10,000 IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) TA = 25°C 12 10,000 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 150°C 1,000 TA = 125°C TA = 85°C 100 T A = 25°C 10 TA = -55°C T A = 25°C 1 1 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 9 Typical Leakage Current vs. Drain-Source Voltage 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 10 Gate-Source Leakage Current vs. Voltage 10,000 IGSS, LEAKAGE CURRENT (nA) NEW PRODUCT 1.6 TA = 150°C 1,000 TA = 125°C 100 T A = 85°C TA = 25°C 10 TA = -55°C 1 1 2 3 4 5 6 7 8 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 11 Gate-Source Leakage Current vs. Voltage DMG8601UFG Document number: DS31788 Rev. 5 - 2 4 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 136°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A U-DFN3030-8 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.15 ⎯ ⎯ b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 e 0.65 ⎯ ⎯ E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L 0.30 0.60 0.45 All Dimensions in mm A3 SEATING PLANE A1 e b .2 R0 E 00 E2 L D2 D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Z X1 X2 G Y DMG8601UFG Document number: DS31788 Rev. 5 - 2 Dimensions Value (in mm) Z 2.59 G 0.11 X1 2.49 X2 0.65 Y 0.39 C 0.65 C 5 of 6 www.diodes.com September 2012 © Diodes Incorporated DMG8601UFG IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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