DZT751 LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (DZT651) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) “Green” Device (Note 2) SOT-223 Mechanical Data • • • • • • • Case: SOT-223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish – Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams Maximum Ratings COLLECTOR 2,4 3 E 2 C C 4 BASE 1 1 B 3 EMITTER TOP VIEW Schematic and Pin Configuration @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM Value -80 -60 -5 -3 -6 Unit V V V A A Symbol Value Unit PD 1 (Note 3) 2 (Note 4) W RθJA 125 °C/W Tj, TSTG -55 to +150 °C Thermal Characteristics Characteristic Power Dissipation @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, pad layout as shown on last page or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf, or on page 4 of this data sheet. 4. Device mounted on Polyimide PCB with 1.8cm2 copper area. DS31115 Rev. 3 - 2 1 of 4 www.diodes.com DZT751 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit V(BR)CBO V(BR)CEO V(BR)EBO -80 -60 -5 ⎯ ⎯ ⎯ Collector Cutoff Current ICBO ⎯ ⎯ Emitter Cutoff Current ON CHARACTERISTICS (Note 5) IEBO ⎯ ⎯ ⎯ ⎯ ⎯ -0.1 -10 -0.1 V V V μA μA μA IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -60V, IE = 0 VCB = -60V, IE = 0, TA = 100°C VEB = -4V, IC = 0 ⎯ ⎯ ⎯ ⎯ -0.08 -0.2 -0.9 -0.8 -0.3 -0.6 -1.25 -1 V V V V hFE 70 100 80 40 200 180 160 140 ⎯ 300 ⎯ ⎯ ⎯ IC = -1A, IB = -100mA IC = -3A, IB = -300mA IC = -1A, IB = -100mA VCE = -2V, IC = -1A VCE = -2V, IC = -50mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1A VCE = -2V, IC = -2A Transition Frequency fT 100 145 ⎯ MHz Output Capacitance Cobo ⎯ ⎯ 30 pF ton toff ⎯ ⎯ 45 200 ⎯ ⎯ ns ns Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VBE(SAT) VBE(ON) DC Current Gain Test Condition AC CHARACTERISTICS Switching Times Notes: VCE = -5V, IC = -100mA, f = 100MHz VCB = -10V, f = 1MHz VCC = -10V, IC = -500mA, IB1 = IB2 = -50mA 5. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%. 1.0 PD, POWER DISSIPATION (W) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage 0.8 0.6 0.4 0.2 0 0 DS31115 Rev. 3 - 2 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 150 2 of 4 www.diodes.com 0 1 2 3 4 5 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage DZT751 © Diodes Incorporated 0.3 400 350 0.25 300 0.2 200 0.15 150 0.1 100 0.05 50 0 0 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current -IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current 1 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 400 350 300 250 200 150 100 50 0 VR , REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics DS31115 Rev. 3 - 2 -IC, COLLECTOR CURRENT (A) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz) NEW PRODUCT 250 200 150 100 VCE = -10V f = 100MHz 50 0 0 10 20 30 40 50 60 70 80 90 100 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 3 of 4 www.diodes.com DZT751 © Diodes Incorporated Ordering Information (Note 6) Packaging SOT-223 Device DZT751-13 NEW PRODUCT Notes: Shipping 2500/Tape & Reel 6. For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf. Marking Information (Top View) YWW KP2 KP2 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year ex: 7 = 2007 WW = Week code 01 - 52 Package Outline Dimensions SOT-223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b1 2.90 3.10 3.00 b2 0.60 0.80 0.70 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e — — 4.60 e1 — — 2.30 L 0.85 1.05 0.95 0.84 0.94 0.89 Q All Dimensions in mm Suggested Pad Layout (Unit: mm) IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS31115 Rev. 3 - 2 4 of 4 www.diodes.com DZT751 © Diodes Incorporated