ZVP4525G Green 250V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID V(BR)DSS RDS(ON) -250V 14Ω @ VGS= 10V TA = +25°C -265mA Description This new generation trench MOSFET features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. High Voltage Low On-resistance Fast Switching Speed Low Gate Drive Low Threshold Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications • • • • • Earth Recall and Dialling Switches Electronic Hook Switches High Voltage Power MOSFET Drivers Telecom Call Routers Solid State Relays Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (Approximate) SOT223 D Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number ZVP4525GTA Notes: Marking ZVP4525 Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information ZVN ZVP 4525 4310 ZVP4525G Document number: DS33412 Rev. 5 - 2 YWW SOT223 ZVP4525 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5 = 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com March 2015 © Diodes Incorporated ZVP4525G Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS = 10V; TA = +25°C (Note 5) @VGS = 10V; TA = +70°C (Note 5) Pulsed Drain Current (Note 7) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Symbol VDSS VGSS ID IDM IS ISM Value -250 ±40 -265 -212 -1 -0.75 -1 Unit V V Value 2.0 16 63 26 -55 to +150 Unit W mW/°C °C/W °C/W °C mA A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation at TA = +25°C (Note 5) Linear Derating Factor Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RθJA RθJA TJ, TSTG Derating Curve Safe Operating Area Transient Thermal Impedance ZVP4525G Document number: DS33412 Rev. 5 - 2 Pulse Power Dissipation 2 of 7 www.diodes.com March 2015 © Diodes Incorporated ZVP4525G Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -250 -285 - V VGS = 0V, ID = -1mA Zero Gate Voltage Drain Current IDSS - -30 -500 nA VDS = -250V, VGS = 0V Gate-Source Leakage IGSS - ±1 ±100 nA VGS = ±40V, VDS = 0V VGS(TH) -0.8 -1.5 -2.0 V VDS = VGS, ID = -1mA - 10 14 Ω VGS = -10V, ID = -200mA - 13 18 Ω VGS = -3.5V, ID = -100mA ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) RDS(ON) Forward Transconductance (Note 10) gfs 80 200 - mS Diode Forward Voltage (Note 8) VSD - - 0.97 V VDS = -10V, ID = -0.15A IS = -200mA, VGS = 0V, TJ = +25°C DYNAMIC CHARACTERISTICS Ciss - 73 - pF Output Capacitance (Note 10) Coss - 12.8 - pF Reverse Transfer Capacitance (Note 10) Crss - 3.91 - pF Total Gate Charge (Notes 9 &10) Qg - 2.45 3.45 nC Gate-Source Charge (Notes 9 &10) Qgs - 0.22 0.31 nC Gate-Drain Charge (Notes 9 &10) Qgd - 0.45 0.63 nC Turn-On Delay Time (Notes 9 & 10) tD(ON) 1.53 - ns Turn-On Rise Time (Notes 9 & 10) tR - 3.78 - ns tD(OFF) - 17.5 - ns Turn-Off Fall Time (Notes 9 & 10) tF - 7.85 - ns Reverse Recovery Time (Note 10) tRR - 205 290 ns Reverse Recovery Charge (Note 10) Qrr - 21 29 nC Input Capacitance (Note 10) Turn-Off Delay Time (Notes 9 & 10) Notes: VDS = -25V, VGS = 0V, f = 1.0MHz VGS = -10V, VDS = -25V ID = -200mA VDD = -30V, ID = -200mA, VGS = 10V, RG = 50Ω IF = -200mA, di/dt = 100A/µs, TJ = +25°C 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. 9. Switching characteristics are independent of operating junction temperature. 10. For design aid only, not subject to production testing. Output Characteristics ZVP4525G Document number: DS33412 Rev. 5 - 2 Output Characteristics 3 of 7 www.diodes.com March 2015 © Diodes Incorporated ZVP4525G ZVP4525G Document number: DS33412 Rev. 5 - 2 4 of 7 www.diodes.com March 2015 © Diodes Incorporated ZVP4525G Test Circuits Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit ZVP4525G Document number: DS33412 Rev. 5 - 2 5 of 7 www.diodes.com March 2015 © Diodes Incorporated ZVP4525G Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0° e A1 7° 7° A 0° -1 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X ZVP4525G Document number: DS33412 Rev. 5 - 2 C 6 of 7 www.diodes.com March 2015 © Diodes Incorporated ZVP4525G IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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