ES1AF THRU ES1JF Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A SMAF FEATURES Cathode Band Top View • For surface mounted applications • Low profile package • Glass Passivated Chip Juntion • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives 0.110(2.80) 0.094(2.40) 0.059(1.50) 0.051(1.30) 0.150(3.80) 0.128(3.25) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.035(0.90) MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg 0.00086oz 0.047(1.20) 0.028(0.70) 0.199(5.05) 0.179(4.40) Dimensions in inches and (millimeters) Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T L = 100 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 30 A Maximum Forward Voltage at 1 A VF Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C 1.25 1 1.7 V IR 5 100 μA Typical Junction Capacitance at V R =4V, f=1MHz Cj 10 pF Maximum Reverse Recovery Time at I F =0.5A, I R =1A, I rr =0.25A t rr 35 ns T j , T stg -55 ~ +150 °C Operating and Storage Temperature Range 1 ES1AF THRU ES1JF Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 1.2 300 1.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 Single phase half wave resistive or inductive P.C.B mounted on 0.315×0. 315"(8.0×8. 0mm ) pad areas 0.2 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Lead Temperature (°C) 80 60 100 % of PIV.VOLTS Fig.5 Typical Junction Capacitance Fig.4 Typical Forward Characteristics 14 10 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 40 20 ES1AF 1.0 ES1EF ES1JF 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 12 10 8 6 T J =25°C f = 1.0MHz V sig = 50mV p-p 4 2 0.1 Instaneous Forward Voltage (V) 1 10 Reverse Voltage (V) 2 100