SS32F THRU SS320F Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A SMAF FEATURES Cathode Band Top View • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications 0.110(2.80) 0.094(2.40) 0.059(1.50) 0.051(1.30) 0.150(3.80) 0.128(3.25) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.035(0.90) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg 0.00086oz 0.199(5.05) 0.179(4.40) Dimensions in inches and (millimeters) Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS32F SS34F SS36F SS38F SS310F SS312F SS315F SS320F Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM Max Instantaneous Forward Voltage at 3 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） Operating Junction Temperature Range Storage Temperature Range 80 70 A VF 0.55 IR 0.5 10 0.3 5 mA Cj 250 160 pF 0.70 0.85 0.95 V RθJA 40 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C 1） Measured 2） A 3.0 at 1MHz and applied reverse voltage of 4 V D.C. P C B. mounted with 0 2 X 0 2" (5 X 5 mm) copper pad areas 1 SS32F THRU SS320F Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 3.5 100LFM 3.0 2.5 2.0 1.5 1.0 Single phase half-wave 60 Hz resistive or inductive load 0.5 0.0 25 50 75 100 125 150 10 4 SS32F/SS34F SS36F-SS320F 10 1 T J =25°C 10 0 0 40 20 60 80 100 Percent of Rated Peak Reverse Voltage（%） Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 500 Junction Capacitance ( pF) 20 10 1.0 SS32F/SS34F SS36F/SS38F SS310F/SS312F SS315F/SS320F 0.1 0 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 SS32F/SS34F 20 SS36F-SS320F 10 1 0.1 100 10 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 8.3 ms Single Half Sine Wave (JEDEC Method) 80 60 SS32F~SS38F SS310F~SS312F 40 20 00 1 T J =25°C 200 1.8 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) T J =75°C 10 2 Ambient Temperature (°C) Peak Forward Surage Current (A) T J =100°C 10 3 10 100 Number of Cycles at 60Hz 200 100 10 1 0.01 0.1 1 10 t, Pulse Duration（sec） 2 100