SS52BF THRU SS520BF Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A SMBF Cathode Band Top View FEATURES 0.145(3.70) 0.137(3.50) • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications 0.087(2.20) 0.075(1.90) 0.174(4.40) 0.166(4.20) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57 mg / 0.002oz 0.217(5.50) 0.201(5.10) Dimensions in inches and (millimeters) Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS52BF SS54BF SS56BF SS58BF SS510BF SS512BF SS515BF SS520BF Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 5.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 150 A Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） 0.45 0.55 0.85 1.0 50 V mA 500 800 pF RθJA 40 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C 1） Measured 2） 0.70 IR Cj Operating Junction Temperature Range Storage Temperature Range VF at 1MHz and applied reverse voltage of 4 V D.C. P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas. 1 SS52BF THRU SS520BF Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 6.0 100LFM 5.0 4.0 3.0 2.0 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas 1.0 0.0 25 50 75 100 125 150 10 4 T J =100°C 10 3 10 1 T J =25°C 10 0 0 Lead Temperature (°C) 60 100 80 Fig.4 Typical Junction Capacitance T J =25°C Junction Capacitance ( pF) 20 10 1 SS52BF SS54BF SS56BF/SS58BF SS510BF/SS520BF 0.1 0 0.5 1.0 1.5 100 SS52BF/SS54BF SS54F/SS520F SS56BF-SS520BF 20 10 0.1 10 1 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 150 125 100 75 50 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 500 Instaneous Forward Voltage (V) 175 25 1000 2.0 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) T J =75°C 10 2 10 100 Number of Cycles at 60Hz 100 10 1 0.01 0.1 1 10 t, Pulse Duration（sec） 2 100