RS3ABF THRU RS3MBF Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A SMBF Cathode Band Top View FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Fast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives 0.145(3.70) 0.137(3.50) 0.087(2.20) 0.075(1.90) 0.174(4.40) 0.166(4.20) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) 0.047(1.20) 0.028(0.70) MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57mg / 0.002oz 0.217(5.50) 0.201(5.10) Dimensions in inches and (millimeters) Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols RS3ABF RS3BBF RS3DBF RS3GBF RS3JBF RS3KBF RS3MBF Units Parameter Maximum Repetitive Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at Ta = 65 °C I F(AV) 3 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 100 A Maximum Instantaneous Forward Voltage at 3 A VF 1.3 V IR 5 150 μA Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C Maximum Reverse Recovery Time Typical Junction Capacitance 1） 2） Typical Thermal Resistance 3） Operating and Storage Temperature Range t rr 250 150 ns Cj 60 pF RθJA 55 °C/W T j , T stg -55 ~ +150 °C 1）Measured with I F = 0.5 A, I R = 1 A, I rr = 0.25 A 2）Measured at 1MHz and applied reverse voltage of 4V D.C 3）P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas. 1 RS3ABF THRU RS3MBF Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A Fig.2 Typical Reverse Characteristics Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 3.5 100LFM 3.0 2.4 1.8 1.2 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas 0.6 0.0 25 50 75 100 125 150 175 100 T J =125°C 100 10 T J =25°C 1.0 00 10 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 1.0 1.5 2.0 2.5 Peak Forward Surage Current (A) 80 100 1000 120 140 T J =25°C 100 0.1 120 100 80 60 40 8.3 ms Single Half Sine Wave (JEDEC Method) 00 10 1.0 10 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 1 60 10 0.5 Instaneous Forward Voltage (V) 20 40 Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 0.01 0.0 20 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) 100 Number of Cycles 2 100