FUJITSU SEMICONDUCTOR DS501-00011-8v2-J DATA SHEET FRAM 256 K (32 K×8) MB85R256F ■ MB85R256F , ×8 FRAM (Ferroelectric Random Access Memory MB85R256F , SRAM MB85R256F , / 2 E PROM MB85R256F , SRAM CMOS 1012 ■ / 32,768 ×8 1012 / 10 ( 85 °C), 95 ( 55 °C), 200 ( 2.7 V 3.6 V 5 mA( ) 5μA( ) 40 °C 85 °C SOP,28 (FPT-28P-M17) SOP,28 (FPT-28P-M01) TSOP (1),28 (FPT-28P-M19) RoHS Copyright 2011-2015 FUJITSU SEMICONDUCTOR LIMITED 2015.5 32,768 ) 35 °C) , MB85R256F ■ (TOP VIEW) A14 1 28 VDD A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O2 13 16 I/O4 GND 14 15 I/O3 (FPT-28P-M17 / FPT-28P-M01) OE A11 A9 A8 A13 WE VDD A14 A12 A7 A6 A5 A4 A3 22 23 24 25 26 27 28 1 2 3 4 5 6 7 21 20 19 18 17 16 15 14 13 12 11 10 9 8 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 (FPT-28P-M19) ■ 1 11 2 10, 21, 23 13, 15 26 19 A0 A14 I/O0 I/O7 20 CE 27 WE 22 OE 28 VDD 14 GND DS501-00011-8v2-J MB85R256F ■ A10 ~ A14 A0 ~ A14 A0 ~ A 7 FRAM 32,768×8 CE A8, A9 SRAM I/F WE I/O I/O0-I/O7 I/O0 I/O7 OE ■ CE WE OE H × × × L L × H H H L L H L L H L H L I/O0 I/O7 Hi-Z (ISB) L H“H” DS501-00011-8v2-J , L“L” , דH”, “L”, ⎯ ⎯ (I , Hi-Z DD) , 3 MB85R256F ■ V SS * VDD 0.5 V * VIN 0.5 VDD 0.5 V * VOUT 0.5 VDD 0.5 V TA 40 85 °C Tstg 55 125 °C 4.0 0V ( , , ) , , ■ VDD *1 1 2 VSS 2.7 TA *2 3.3 40 3.6 ⎯ V °C 85 0V , , , , , , , 4 DS501-00011-8v2-J MB85R256F ■ 1. ( ) ⎯ ⎯ 10 μA VOUT 0 V VDD, CE VIH or OE VIH ⎯ ⎯ 10 μA IDD CE 0.2 V, 0.2 V/0.2 V, Other inputs VDD tRC (Min) , Iout 0 mA ⎯ 5 10 mA ISB CE, WE, OE VDD ⎯ 5 50 μA “H” VIH VDD 2.7 V 3.6 V VDD×0.8 ⎯ VDD 0.5 ( 4.0) V “L” VIL VDD 2.7 V 3.6 V “H” VOH IOH “L” VOL IOL *1 *2 1: IDD 2: | ILI | VIN | ILO | , Address, Data In ,“H” 0V VDD 2.0 mA 1 ⎯ ⎯ V ⎯ ⎯ 0.4 V 1 “L” 0V V 0.6 VDD×0.8 2.0 mA VDD ⎯ 0.5 Iout , CMOS 2. 2.7 V 3.6 V 40 °C 85 °C 0.3 V 2.7 V 10 ns 10 ns Vcc/2 Vcc/2 100 pF (1) tRC 150 ⎯ tCA 70 500 tRP 70 500 tPC 80 ⎯ tAS 0 ⎯ tAH 25 ⎯ CE tCE ⎯ 70 OE tOE ⎯ 70 CE tHZ ⎯ 25 OE tOHZ ⎯ 25 CE DS501-00011-8v2-J ns 5 MB85R256F (2) CE tWC 150 ⎯ tCA 70 500 tWP 70 500 tPC 80 ⎯ tAS 0 ⎯ tAH 25 ⎯ tDS 50 ⎯ tDH 0 ⎯ ns 3. CIN COUT 6 VDD VIN VOUT 0 V, 25 °C f 1 MHz, TA ⎯ ⎯ 10 pF ⎯ ⎯ 10 pF DS501-00011-8v2-J MB85R256F ■ 1. (CE ) tRC tPC tPC tCA CE tAH tAS A0 ~ A14 tAS tAH Valid Valid OE I/O0 ~ I/O7 High-Z Valid High-Z Valid tHZ tCE WE “H” : Don't care ) 2. (OE CE tAH tAS A0 ~ A14 tAS tAH Valid Valid tRC tPC OE tPC tRP tOE I/O0 ~ I/O7 tOHZ High-Z Valid WE Valid High-Z “H” : Don't care DS501-00011-8v2-J 7 MB85R256F 3. (CE ) tWC tPC tPC tCA CE tAS A0 ~ A14 tAS tAH tAH Valid Valid WE tDS tDS tDH Valid Valid Data In tDH OE “H” : Don't care 4. (WE ) CE tAS A0 ~ A14 tAS tAH Valid Valid tWC tPC tPC tWP WE tDS Data In tAH tDS tDH tDH Valid Valid OE “H” : Don't care 8 DS501-00011-8v2-J MB85R256F ■ tpd tr tpu VDD VDD 2.7 V 2.7 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) GND GND 0.8* CE > VDD × CE : Don't care CE > VDD × 0.8* CE CE CE OFF ON (Max) V DD 0.5 V CE CE tpd 80 ⎯ ⎯ ns tpu 80 ⎯ ⎯ ns tr 0.05 ⎯ 200 ms , , ■ FRAM *1 / * 1012 ⎯ 10 ⎯ T A 85 °C 95 ⎯ T A 55 °C ⎯ T A 35 °C 2 200 1 2 FRAM , / TA 85 °C / , , ■ DS501-00011-8v2-J 9 MB85R256F ■ ESD DUT ESD HBM( JESD22-A114 2000 V 2000 V ) ESD MM( JESD22-A115 200 V 200 V ) ESD CDM( JESD22-C101 1000 V 1000 V ) ( MB85R256FPF-G-BNDE1 MB85R256FPFCN-G-BNDE1 ) JESD78 ( ⎯ ) ⎯ JESD78 ( Proprietary method ) (C-V Proprietary method ) ( 300 mA 300 mA ⎯ ) A VDD IIN 10 ) VIN IIN - VSS , IIN ±300 mA , I/O VDD ( ) V VIN ( + DUT 300 mA ( ) , IIN 300 mA , DS501-00011-8v2-J MB85R256F (C-V ) A 1 2 VDD SW DUT + V VIN - ( ) SW 2 1 ,5 1 2 C 200pF VDD ( ) VSS , ,5 , ■ JEDEC , Moisture Sensitivity Level 3 (IPC / JEDEC J-STD-020D) ■ , REACH DS501-00011-8v2-J , EU RoHS RoHS 11 MB85R256F ■ SOP, 28 (FPT-28P-M17) MB85R256FPF-G-BNDE1 TSOP (1), 28 (FPT-28P-M19) MB85R256FPFCN-G-BNDE1 ⎯* ⎯* MB85R256FPF-G-BND-ERE1 SOP, 28 (FPT-28P-M17) 1000 MB85R256FPNF-G-JNE2 SOP, 28 (FPT-28P-M01) ⎯* MB85R256FPNF-G-JNERE2 SOP, 28 (FPT-28P-M01) 1000 , 12 DS501-00011-8v2-J MB85R256F ■ ࡊࠬ࠴࠶ࠢSOP, 28 ࡇࡦ (FPT-28P-M17) ࠼ࡇ࠶࠴ 1.27mm ࡄ࠶ࠤࠫ ࡄ࠶ࠤࠫ㐳ߐ 8.6 17.75mm ࠼ᒻ⁁ ࠟ࡞࠙ࠖࡦࠣ ኽᱛᣇᴺ ࡊࠬ࠴࠶ࠢࡕ࡞࠼ ขઃߌ㜞ߐ 2.80mm MAX ⾰㊂ 0.82g ࠦ࠼㧔ෳ⠨㧕 P-SOP28-8.6×17.75-1.27 ࡊࠬ࠴࠶ࠢSOP, 28 ࡇࡦ 㧔FPT-28P-M17㧕 +0.25 ᵈ 1㧕*1 ශኸᴺߪࠫࡦᱷࠅࠍޕ ᵈ 2㧕*2 ශኸᴺߪࠫࡦᱷࠅࠍ߹ߕޕ ᵈ 3㧕┵ሶ߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍޕ ᵈ 4㧕┵ሶߪ࠲ࠗࡃಾᢿᱷࠅࠍ߹ߕޕ +.010 +0.03 *1 17.75 –0.20 .699 –.008 0.17 –0.04 +.001 .007 –.002 28 15 11.80±0.30 (.465±.012) *2 8.60±0.20 INDEX (.339±.008) Details of "A" part 2.65±0.15 (Mounting height) (.104±.006) 0.25(.010) 1 1.27(.050) 14 0.47±0.08 (.019±.003) 0.13(.005) "A" 0~8° M 0.80±0.20 (.031±.008) 0.88±0.15 (.035±.006) 0.20±0.15 (.008±.006) (Stand off) 0.10(.004) C 2002-2010 FUJITSU SEMICONDUCTOR LIMITED F28048S-c-3-6 DS501-00011-8v2-J න㧦mm 㧔inches㧕 ᵈᗧ㧦ᒐౝߩ୯ߪෳ⠨୯ߢߔޕ 13 MB85R256F ࡊࠬ࠴࠶ࠢSOP, 28 ࡇࡦ (FPT-28P-M01) ࡊࠬ࠴࠶ࠢSOP, 28 ࡇࡦ 㧔FPT-28P-M01㧕 +0.25 ࠼ࡇ࠶࠴ 1.27mm ࡄ࠶ࠤࠫ ࡄ࠶ࠤࠫ㐳ߐ 7.6 17.75mm ࠼ᒻ⁁ ࠟ࡞࠙ࠖࡦࠣ ኽᱛᣇᴺ ࡊࠬ࠴࠶ࠢࡕ࡞࠼ ขઃߌ㜞ߐ 2.80mm MAX ⾰㊂ 0.67g ࠦ࠼㧔ෳ⠨㧕 P-SOP28-7.6×17.75-1.27 ᵈ 1㧕*1 ශኸᴺߪࠫࡦᱷࠅࠍޕ ᵈ 2㧕*2 ශኸᴺߪࠫࡦᱷࠅࠍ߹ߕޕ ᵈ 3㧕┵ሶ߅ࠃ߮┵ሶෘߐߪࡔ࠶ࠠෘࠍޕ ᵈ 4㧕┵ሶߪ࠲ࠗࡃಾᢿᱷࠅࠍ߹ߕޕ +.010 +0.03 *1 17.75 –0.20 .699 –.008 0.17 –0.04 +.001 .007 –.002 28 15 *2 7.60±0.30 10.20±0.40 (.299±.012) (.402±.016) INDEX Details of "A" part +0.25 2.55 –0.15 +.010 .100 –.006 (Mounting height) 0.25(.010) 1 14 1.27(.050) 0.47±0.08 (.019±.003) 0.13(.005) "A" 0~8° M 0.50±0.20 (.020±.008) 0.60±0.15 (.024±.006) +0.10 0.10 –0.05 +.004 .004 –.002 (Stand off) 0.10(.004) C 14 2002-2009 FUJITSU MICROELECTRONICS LIMITED F28005S-c-7-8 න㧦mm 㧔inches㧕 ᵈᗧ㧦ᒐౝߩ୯ߪෳ⠨୯ߢߔޕ DS501-00011-8v2-J MB85R256F ࡊࠬ࠴࠶ࠢTSOP (1), 28ࡇࡦ (FPT-28P-M19) ࠼ࡇ࠶࠴ 0.55 mm ࡄ࠶ࠤࠫ ࡄ࠶ࠤࠫ㐳ߐ 11.80 8.00 mm ࠼ᒻ⁁ ࠟ࡞࠙ࠖࡦࠣ ኽᱛᣇᴺ ࡊࠬ࠴࠶ࠢࡕ࡞࠼ ขઃߌ㜞ߐ 1.20 mm Max ㊀ߐ ⚂ 0.25 g ࠦ࠼㧔ෳ⠨㧕 P-TSOP(1)28-11.8×8-0.55 ࡊࠬ࠴࠶ࠢTSOP (1), 28ࡇࡦ 㧔FPT-28P-M19㧕 21 22 28 LEAD No. INDEX 1 7 8 0.15±0.05 (.006±.002) 13.40±0.20 (.528±.008) 11.80±0.20 (.465±.008) 8.00±0.20 (.315±.008) 0.55(.0217) TYP 0.10(.004) 12.40±0.20 (.488±.008) 0.50±0.10 (.020±.004) 7.15(.281) REF 0.20±0.10 (.008±.004) 0.00(.000) Min (Stand off) +0.10 +.004 1.10 –0.05 .043 –.002 (Mounting height) 0.09(.004) M න㧦mm㧔inches㧕 ᵈᗧ㧦ᒐౝߩ୯ߪෳ⠨୯ߢߔޕ C 2005-2010 FUJITSU SEMICONDUCTOR LIMITED F28062S-c-3-5 DS501-00011-8v2-J 15 MB85R256F ■ [MB85R256FPF-G-BNDE1] [MB85R256FPF-G-BND-ERE1] JAPAN MB85R256F 1150 E00 E1 [FPT-28P-M17] [MB85R256FPNF-G-JNE2] [MB85R256FPNF-G-JNERE2] CHINA MB85R256F 1200 300 E2 [FPT-28P-M01] 16 DS501-00011-8v2-J MB85R256F [MB85R256FPFCN-G-BNDE1] JAPAN MB85R256F 1150 E00 E1 [FPT-28P-M19] DS501-00011-8v2-J 17 MB85R256F ■ 1. 1.1 ( ( ) ) 520 mm , / FPT-28P-M17 SOP, 28 / 28 2240 / 8960 0.6 (6.8) 8.0 14.4 15.6 1.6 2.0 3.2 5.4 (10.6) 9.4 ©2002-2010 FUJITSU SEMICONDUCTOR LIMITED 2002 FUJITSU LIMITED F28011-SET1:FJ99L-0018-E0010-1-K-1 F28011-SET1:FJ99L-0018-E0010-1-K-3 C 0.6 ( 18 mm) DS501-00011-8v2-J MB85R256F 1.2 IC SOP Index mark *1*3 ( ) *1*3 ( ) *2 -A*3 -B*3 1: 2: 3: E1 , , , , G Pb , , , DS501-00011-8v2-J 19 MB85R256F 1.3 [C-3 , (20mm×100mm)] (50mm×100mm) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: C-3 ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::::::: 0:::::::::: :::::: ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: 2#%-#)'%1706 ᪿ൮ᢙ :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: ޓޓޓޓޓ⸘ޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: , 20 -A, B DS501-00011-8v2-J MB85R256F 1.4 (1) H W L L W H 540 125 75 ( mm) (2) H W L L W H 565 270 180 ( DS501-00011-8v2-J mm) 21 MB85R256F 2. 2.1 TSOP28(I) / FPT-28P-M19 128 / / 1280 5120 322.6 315 19 × 15 = 285 7.62 1.27 15 B B A 34.3 25.4 8-NO HOLES 255.3 15 25.4 15.8 19 14.9 8.2 5 11 1 0.85 5 SEC. B-B SEC. A-A C 7.62 1.27 9.5 0.85 1.27 7.62 1 2 1 13.7 9.5 1 1.27 1.27 R4.75 2 C3 0.76 A 2.54 15.8 135.9 14.9 × 7 = 104.3 15.8 15 2005-2010 FUJITSU SEMICONDUCTOR LIMITED TSOP I 8 × 13.4F : JHB-TS1-0813F-1-D-3 mm 150 °C Max 136 g 22 DS501-00011-8v2-J MB85R256F 2.2 IEC (JEDEC) (IC) IC Index mark *5 *5 *1*4*5 *5 *5 , 1 *5 *5 *5 *1*4*5 *5 ) *2*3*5 ( *5 -A*4*5 -B*4*5 E1 1: 2: 3: 4: 5: , G Pb , , , , , , , , , DS501-00011-8v2-J 23 MB85R256F 2.3 [C-3 , (20mm×100mm)] (50mm×100mm) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: C-3 ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::::::: 0:::::::::: :::::: ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: 2#%-#)'%1706 ᪿ൮ᢙ :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: , 24 ޓޓޓޓޓ⸘ޓޓ::: -A, B DS501-00011-8v2-J MB85R256F 2.4 (1) H W L L W H 165 360 75 ( mm) (2) H W L L W H 355 385 195 ( DS501-00011-8v2-J mm) 25 MB85R256F 3. 3.1 / / 1000 1000 5000 2±0.1 4±0.1 16±0.1 ø1.5 +0.1 –0 24 11.5±0.1 B A ø2 +0.1 –0 A 8 / 18.2±0.1 7 +0.3 –0.1 FPT-28P-M17 1.75±0.1 No 0.3±0.05 B 12.4±0.1 7 2.8 3.1 3.3±0.1 SEC.B-B SEC.A-A C 2012 FUJITSU SEMICONDUCTOR LIMITED F028011EELS-F : FJ990-0010-X0528-1-S-1 mm 26 DS501-00011-8v2-J MB85R256F 3.2 IC Index mark ER ( ) ( ) ( ) 3.3 ࡞ⓣኸᴺ E D W2 C B A W1 12 13 14 15 56 12 16 24 r W3 㧦ࡂࡉㇱߩኸᴺ mm No 1 2 3 8 A 254 ±2 4 5 12 254 ±2 6 7 16 330 ±2 254 ±2 9 24 330 ±2 254 ±2 10 11 32 44 330 ±2 100 +2 -0 B 8 330±2 100 +2 -0 150 +2 -0 100 +2 -0 150 +2 -0 100 +2 -0 100±2 C 13±0.2 13 +0.5 -0.2 D 21±0.8 20.5 +1 -0.2 E W1 W2 W3 2±0.5 8.4 +2 -0 14.4 7.9 10.9 r DS501-00011-8v2-J 12.4 +2 -0 18.4 11.9 16.4 +2 -0 22.4 15.4 15.9 24.4 +2 -0 30.4 19.4 23.9 32.4 +2 -0 38.4 27.4 31.9 44.4 +2 -0 50.4 35.4 43.9 47.4 56.4 +2 -0 12.4 +1 -0 +0.1 16.4 +1 -0 24.4 -0 62.4 18.4 22.4 30.4 55.9 59.4 12.4 14.4 16.4 18.4 24.4 26.4 1.0 27 MB85R256F 3.4 (φ330mm ) φ 254 mm *1, *4 *1, *4 *1, *4 *1, *4 ) *2, *3 ( -B*4 -A*4 1 2 3 4 ( E1 , G Pb , , ) , , , , , 28 DS501-00011-8v2-J MB85R256F 3.5 ( [C-3 , (20mm×100mm)] (50mm×100mm) ) 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ :::::::::::::: 0:::::::::::::: ㋦㩖㩢㨺㩙㨺㩂 ::: ⸥ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 㧽㧯ޓ㧼㧭㧿㧿 0:::::::::: :::::: C-3 ᬌᩏޓᷣ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 ຠᢙ㊂ :::REU :::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ⸥ຠဳᩰߩ㩔㩨㨺㩄㨺㩎㩨 :::::::: ൮ⵝᐕᣣ #55'/$.'&+0ZZZZZ ::::::::::::::: 㘈ቴຠဳᩰޓߪޔን჻ㅢຠဳᩰ ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 :::: :::::::::: ൮ⵝㅊ⇟ :::::::::: :::::::::: ን჻ㅢ▤ℂ⇟ภ ຠ㩥㨹㩎ᖱႎ㧗ຠᢙ㊂ :::::::::::::: ․⸥㗄 -A [D ] (100mm×100mm) ⊒ᵈ⠪ޓޓ::::::::::::: ㅍઃవฬ %756 ን჻ㅢ ࡒࠦࡦ࠳ࠢ࠲ᩣᑼળ␠ ฃᷰ႐ᚲฬޓޓ::::::::: ㅍઃవᚲ &'.+8'4;21+06㧕 ⚊ຠࠠ⇟ภޓ:::::::::::::: 64#0501 ຠฬ㩄㨺㩎㩨ޓޓޓ:::::::::::::: 2#4601 ޓޓޓຠဳᩰ ຠฬ 2#460#/':::::::::::::: ຠဳᩰ :::㧛::: ᢙ㧛⚊ᢙ㊂ 36;616#.36; %7561/'454'/#4-5 ⊒ᵈ⠪↪⠨ :::::::::::::::::::: D ฃᵈ⠪ 8'0&14 ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::: ን჻ㅢ▤ℂ⇟ภ ::::::::::::::: ޓຠဳᩰ න 70+6 :: 2#%-#)'%1706 ᪿ൮ᢙ :::㧛::: 0::::::::::::::::: ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ 0::::::::::::::::: ຠဳᩰຠᢙ㊂ ን჻ㅢ▤ℂ⇟ภຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ຠဳᩰຠᢙ㊂ߩ㩔㩨㨺㩄㨺㩎㩨 ን჻ㅢ▤ℂ⇟ภ 0:::::::::: ን჻ㅢ▤ℂ⇟ภߩ㩔㩨㨺㩄㨺㩎㩨 -B ::::::::::::::㧔ຠဳᩰ㧕 㧔▫ᢙ㧕ޓޓޓ㧔ᢙ㊂㧕 ޓ:▫ޓޓޓޓޓ::: ޓ:▫ޓޓޓޓޓ::: ޓޓޓޓޓ⸘ޓޓ::: 㧔ຠ㩥㨹㩎ᖱႎ㧕 ޓޓޓ::::::: ޓޓޓ::::::: ( ) DS501-00011-8v2-J , -A, B 29 MB85R256F 3.6 (1) H W L L W H 12, 16 40 24, 32 365 44 50 345 65 56 75 ( mm) (2) H W L L W H 415 400 315 ( 30 mm) DS501-00011-8v2-J MB85R256F ■ , 1 SRAM 4 5 1. “H” “L” “H” “L” 11 DS501-00011-8v2-J 31 MB85R256F 富士通セミコンダクター株式会社 0120-198-610 222-0033 2-100-45 : 9 17 ( , ) PHS http://jp.fujitsu.com/fsl/ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,